CA919309A - Semiconductor diodes - Google Patents

Semiconductor diodes

Info

Publication number
CA919309A
CA919309A CA105188A CA105188A CA919309A CA 919309 A CA919309 A CA 919309A CA 105188 A CA105188 A CA 105188A CA 105188 A CA105188 A CA 105188A CA 919309 A CA919309 A CA 919309A
Authority
CA
Canada
Prior art keywords
semiconductor diodes
diodes
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA105188A
Other languages
English (en)
Inventor
Wenzig Wolfgang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA919309A publication Critical patent/CA919309A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/018—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/913—Active solid-state devices, e.g. transistors, solid-state diodes with means to absorb or localize unwanted impurities or defects from semiconductors, e.g. heavy metal gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation
CA105188A 1970-02-13 1971-02-12 Semiconductor diodes Expired CA919309A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2006729A DE2006729C3 (de) 1970-02-13 1970-02-13 Verfahren zur Herstellung einer Halbleiterdiode

Publications (1)

Publication Number Publication Date
CA919309A true CA919309A (en) 1973-01-16

Family

ID=5762233

Family Applications (1)

Application Number Title Priority Date Filing Date
CA105188A Expired CA919309A (en) 1970-02-13 1971-02-12 Semiconductor diodes

Country Status (7)

Country Link
US (1) US3694705A (enExample)
CA (1) CA919309A (enExample)
CH (1) CH515616A (enExample)
DE (1) DE2006729C3 (enExample)
FR (1) FR2080988A1 (enExample)
GB (1) GB1303385A (enExample)
NL (1) NL7101917A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573225B2 (enExample) * 1974-08-19 1982-01-20
US4080620A (en) * 1975-11-17 1978-03-21 Westinghouse Electric Corporation Reverse switching rectifier and method for making same
US4102714A (en) * 1976-04-23 1978-07-25 International Business Machines Corporation Process for fabricating a low breakdown voltage device for polysilicon gate technology
US4035827A (en) * 1976-04-29 1977-07-12 Rca Corporation Thermally ballasted semiconductor device
US4833509A (en) * 1983-10-31 1989-05-23 Burr-Brown Corporation Integrated circuit reference diode and fabrication method therefor
US4742377A (en) * 1985-02-21 1988-05-03 General Instrument Corporation Schottky barrier device with doped composite guard ring
JPS62122272A (ja) * 1985-11-22 1987-06-03 Toshiba Corp 半導体装置
GB2188478B (en) * 1986-03-26 1989-11-22 Stc Plc Forming doped wells in sillicon subtstrates
US5182219A (en) * 1989-07-21 1993-01-26 Linear Technology Corporation Push-back junction isolation semiconductor structure and method
WO1999053553A2 (en) 1998-04-09 1999-10-21 Koninklijke Philips Electronics N.V. Semiconductor device having a rectifying junction and method of manufacturing same
US9577079B2 (en) * 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3154692A (en) * 1960-01-08 1964-10-27 Clevite Corp Voltage regulating semiconductor device
US3309241A (en) * 1961-03-21 1967-03-14 Jr Donald C Dickson P-n junction having bulk breakdown only and method of producing same
DE1464226B2 (de) * 1962-12-19 1972-09-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen von elektrisch unsymmetrisch leitenden halbleiteranordnungen
US3341380A (en) * 1964-12-28 1967-09-12 Gen Electric Method of producing semiconductor devices
US3551760A (en) * 1966-03-28 1970-12-29 Hitachi Ltd Semiconductor device with an inversion preventing layer formed in a diffused region
US3463977A (en) * 1966-04-21 1969-08-26 Fairchild Camera Instr Co Optimized double-ring semiconductor device
US3534231A (en) * 1968-02-15 1970-10-13 Texas Instruments Inc Low bulk leakage current avalanche photodiode
US3519897A (en) * 1968-10-31 1970-07-07 Nat Semiconductor Corp Semiconductor surface inversion protection

Also Published As

Publication number Publication date
DE2006729B2 (de) 1979-06-13
US3694705A (en) 1972-09-26
GB1303385A (enExample) 1973-01-17
CH515616A (de) 1971-11-15
NL7101917A (enExample) 1971-08-17
FR2080988A1 (enExample) 1971-11-26
DE2006729A1 (de) 1971-08-26
DE2006729C3 (de) 1980-02-14

Similar Documents

Publication Publication Date Title
AU453969B2 (en) Semiconductor diode
AU463404B2 (en) Semiconductor device
AU468187B2 (en) Semiconductor device
CA937336A (en) Semiconductor components
CA948790A (en) Semiconductor devices
CA937684A (en) Semiconductor devices
AU464863B2 (en) Semiconductor device
CA938031A (en) Semiconductor devices
AU444064B2 (en) Semiconductor arrangement
AU453823B2 (en) Semiconductor arrangement
AU446253B2 (en) Semiconductor arrangement
AU451529B2 (en) Semiconductor device
AU440815B2 (en) Semiconductor device
AU437725B2 (en) Semiconductor device
AU461330B2 (en) Semiconductor device
AU450214B2 (en) Semiconductor device
CA938737A (en) Semiconductor arrangements
CA846441A (en) Semiconductor diode
AU3415371A (en) Semiconductor diode
CA832692A (en) Semiconductor
CA845890A (en) Semiconductor components
CA855394A (en) Semiconductor devices
CA848647A (en) Semiconductor devices
AU428182B2 (en) Semiconductor devices
CA836193A (en) Semiconductor devices