CA918041A - Epitaxial growth technique and apparatus therefor - Google Patents

Epitaxial growth technique and apparatus therefor

Info

Publication number
CA918041A
CA918041A CA040129A CA40129A CA918041A CA 918041 A CA918041 A CA 918041A CA 040129 A CA040129 A CA 040129A CA 40129 A CA40129 A CA 40129A CA 918041 A CA918041 A CA 918041A
Authority
CA
Canada
Prior art keywords
epitaxial growth
apparatus therefor
growth technique
technique
therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA040129A
Other languages
English (en)
Inventor
B. Panish Morton
Sumski Stanley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Priority to CA131729A priority Critical patent/CA921371A/en
Application granted granted Critical
Publication of CA918041A publication Critical patent/CA918041A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA040129A 1968-05-09 1969-01-14 Epitaxial growth technique and apparatus therefor Expired CA918041A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA131729A CA921371A (en) 1968-05-09 1972-01-05 Crystal growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72792768A 1968-05-09 1968-05-09

Publications (1)

Publication Number Publication Date
CA918041A true CA918041A (en) 1973-01-02

Family

ID=24924677

Family Applications (1)

Application Number Title Priority Date Filing Date
CA040129A Expired CA918041A (en) 1968-05-09 1969-01-14 Epitaxial growth technique and apparatus therefor

Country Status (8)

Country Link
US (1) US3551219A (de)
BE (1) BE730166A (de)
CA (1) CA918041A (de)
DE (1) DE1922892B2 (de)
FR (1) FR2008120B1 (de)
GB (1) GB1259897A (de)
NL (1) NL6906839A (de)
SE (1) SE348949B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3858551A (en) * 1972-06-14 1975-01-07 Matsushita Electric Ind Co Ltd Apparatus for epitaxial growth from the liquid state
US3990392A (en) * 1968-12-31 1976-11-09 U.S. Philips Corporation Epitaxial growth apparatus
US3664294A (en) * 1970-01-29 1972-05-23 Fairchild Camera Instr Co Push-pull structure for solution epitaxial growth of iii{14 v compounds
US3648654A (en) * 1970-03-16 1972-03-14 Bell Telephone Labor Inc Vertical liquid phase crystal growth apparatus
US3665888A (en) * 1970-03-16 1972-05-30 Bell Telephone Labor Inc Horizontal liquid phase crystal growth apparatus
US3804060A (en) * 1970-03-27 1974-04-16 Sperry Rand Corp Liquid epitaxy apparatus
US3770518A (en) * 1971-01-28 1973-11-06 Varian Associates Method of making gallium arsenide semiconductive devices
JPS5329065B1 (de) * 1971-03-31 1978-08-18
US3925117A (en) * 1971-05-28 1975-12-09 Texas Instruments Inc Method for the two-stage epitaxial growth of iii' v semiconductor compounds
US3762367A (en) * 1973-01-12 1973-10-02 Handotai Kenkyu Shinkokai Growth apparatus for a liquid growth multi-layer film
US3959036A (en) * 1973-12-03 1976-05-25 Bell Telephone Laboratories, Incorporated Method for the production of a germanium doped gas contact layer
JPS5120081A (en) * 1974-08-12 1976-02-17 Hitachi Ltd Ketsushoseichohoho oyobi sochi

Also Published As

Publication number Publication date
BE730166A (de) 1969-09-01
FR2008120B1 (de) 1973-10-19
US3551219A (en) 1970-12-29
NL6906839A (de) 1969-11-11
DE1922892B2 (de) 1971-02-11
DE1922892A1 (de) 1970-04-30
GB1259897A (en) 1972-01-12
SE348949B (de) 1972-09-18
FR2008120A1 (de) 1970-01-16

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Legal Events

Date Code Title Description
MKEX Expiry

Effective date: 19900102