CA874133A - Semiconductor device comprising a field effect transistor having an insulated gate electrode and circuit arrangement comprising such a semiconductor device
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Semiconductor device comprising a field effect transistor having an insulated gate electrode and circuit arrangement comprising such a semiconductor device
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA874133A
Inventor
A. Van Nielen Johannes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Publication date
Application grantedgrantedCritical
Publication of CA874133ApublicationCriticalpatent/CA874133A/en
CA874133ASemiconductor device comprising a field effect transistor having an insulated gate electrode and circuit arrangement comprising such a semiconductor device
ExpiredCA874133A
(en)
Semiconductor device comprising a field effect transistor having an insulated gate electrode and circuit arrangement comprising such a semiconductor device
Method of manufacturing a semiconductor device having at least one insulated gate field effect transistor, and semiconductor device manufactured by using the method
Semiconductor device comprising a field effect transistor having an insulated gate electrode and circuit arrangement comprising such a semiconductor device
Semiconductor device comprising a field-effect transistor of the type having an insulated gate electrode and circuit arrangements comprising such a semiconductor device