CA2986503A1 - Parametrage de transfert de microdispositif - Google Patents
Parametrage de transfert de microdispositif Download PDFInfo
- Publication number
- CA2986503A1 CA2986503A1 CA2986503A CA2986503A CA2986503A1 CA 2986503 A1 CA2986503 A1 CA 2986503A1 CA 2986503 A CA2986503 A CA 2986503A CA 2986503 A CA2986503 A CA 2986503A CA 2986503 A1 CA2986503 A1 CA 2986503A1
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- CA
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- Prior art keywords
- substrate
- devices
- cartridge
- layer
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000012546 transfer Methods 0.000 title claims description 83
- 239000000758 substrate Substances 0.000 claims abstract description 289
- 238000000034 method Methods 0.000 claims description 77
- 230000008569 process Effects 0.000 claims description 51
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 275
- 239000000945 filler Substances 0.000 description 31
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
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- 238000000231 atomic layer deposition Methods 0.000 description 4
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- 239000004952 Polyamide Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
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- 238000004140 cleaning Methods 0.000 description 2
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- 239000010408 film Substances 0.000 description 2
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- 239000002346 layers by function Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229960001296 zinc oxide Drugs 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- 230000001360 synchronised effect Effects 0.000 description 1
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Classifications
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/9512—Aligning the plurality of semiconductor or solid-state bodies
- H01L2224/95136—Aligning the plurality of semiconductor or solid-state bodies involving guiding structures, e.g. shape matching, spacers or supporting members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2986503A CA2986503A1 (fr) | 2017-11-23 | 2017-11-23 | Parametrage de transfert de microdispositif |
CN202310686145.0A CN116682777A (zh) | 2017-11-23 | 2018-11-23 | 微器件转移到系统衬底中的方法 |
TW107141925A TWI686919B (zh) | 2017-11-23 | 2018-11-23 | 微裝置傳送設置及微裝置於系統基板中之整合 |
CN201811405946.0A CN109830455B (zh) | 2017-11-23 | 2018-11-23 | 微器件转移到系统衬底中的方法 |
US16/206,393 US10916523B2 (en) | 2016-11-25 | 2018-11-30 | Microdevice transfer setup and integration of micro-devices into system substrate |
DE102019101489.1A DE102019101489A1 (de) | 2017-11-23 | 2019-01-22 | Mikrovorrichtungsübertragungsaufbau und integration von mikrovorrichtungen in ein systemsubstrat |
US17/017,071 US20200411471A1 (en) | 2016-11-25 | 2020-09-10 | Microdevice transfer setup and integration of micro-devices into system substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA2986503A CA2986503A1 (fr) | 2017-11-23 | 2017-11-23 | Parametrage de transfert de microdispositif |
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Publication Number | Publication Date |
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CA2986503A1 true CA2986503A1 (fr) | 2019-05-23 |
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Family Applications (1)
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CA2986503A Abandoned CA2986503A1 (fr) | 2016-11-25 | 2017-11-23 | Parametrage de transfert de microdispositif |
Country Status (4)
Country | Link |
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CN (2) | CN109830455B (fr) |
CA (1) | CA2986503A1 (fr) |
DE (1) | DE102019101489A1 (fr) |
TW (1) | TWI686919B (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102019101489A1 (de) | 2017-11-23 | 2019-05-23 | Vuereal Inc. | Mikrovorrichtungsübertragungsaufbau und integration von mikrovorrichtungen in ein systemsubstrat |
WO2020252577A1 (fr) * | 2019-06-18 | 2020-12-24 | Vuereal Inc. | Procédé de micro-impression à haut rendement |
US20220254950A1 (en) * | 2019-05-24 | 2022-08-11 | Vuereal Inc. | Selective release and transfer of micro devices |
WO2023015382A1 (fr) * | 2021-08-09 | 2023-02-16 | Vuereal Inc. | Libération sélective de microdispositifs |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11777059B2 (en) | 2019-11-20 | 2023-10-03 | Lumileds Llc | Pixelated light-emitting diode for self-aligned photoresist patterning |
CN110911436B (zh) * | 2019-12-03 | 2022-05-31 | 京东方科技集团股份有限公司 | 一种驱动背板、发光二极管的转移装置及转移方法 |
CN111564465A (zh) * | 2020-05-19 | 2020-08-21 | 深超光电(深圳)有限公司 | 显示面板的制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4530504B2 (ja) * | 1999-08-27 | 2010-08-25 | パナソニック株式会社 | 整列部品の取扱装置 |
EP1358673A1 (fr) * | 2001-02-08 | 2003-11-05 | International Business Machines Corporation | Procede et dispositif de transfert de puces |
TWI723953B (zh) * | 2008-03-05 | 2021-04-11 | 美國伊利諾大學理事會 | 可延展且可折疊的電子裝置 |
JP2012226822A (ja) * | 2011-04-15 | 2012-11-15 | Samsung Electronics Co Ltd | 不揮発性メモリ装置 |
US8349116B1 (en) * | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
CN103646893B (zh) * | 2013-11-29 | 2016-04-06 | 上海华力微电子有限公司 | 晶圆缺陷检测方法 |
KR102399346B1 (ko) * | 2014-12-19 | 2022-05-18 | 글로 에이비 | 백플레인 상에 발광 다이오드 어레이 제조 방법 |
US10319697B2 (en) * | 2015-05-21 | 2019-06-11 | Goertek, Inc. | Transferring method, manufacturing method, device and electronic apparatus of micro-LED |
WO2017075776A1 (fr) * | 2015-11-04 | 2017-05-11 | Goertek. Inc | Procédé de transfert, procédé de fabrication, dispositif et appareil électronique de micro-del |
US20170215280A1 (en) * | 2016-01-21 | 2017-07-27 | Vuereal Inc. | Selective transfer of micro devices |
CA2986503A1 (fr) | 2017-11-23 | 2019-05-23 | Vuereal Inc. | Parametrage de transfert de microdispositif |
CN107017319A (zh) * | 2017-05-23 | 2017-08-04 | 深圳市华星光电技术有限公司 | 彩色微发光二极管阵列基板的制作方法 |
-
2017
- 2017-11-23 CA CA2986503A patent/CA2986503A1/fr not_active Abandoned
-
2018
- 2018-11-23 CN CN201811405946.0A patent/CN109830455B/zh active Active
- 2018-11-23 CN CN202310686145.0A patent/CN116682777A/zh active Pending
- 2018-11-23 TW TW107141925A patent/TWI686919B/zh active
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2019
- 2019-01-22 DE DE102019101489.1A patent/DE102019101489A1/de active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102019101489A1 (de) | 2017-11-23 | 2019-05-23 | Vuereal Inc. | Mikrovorrichtungsübertragungsaufbau und integration von mikrovorrichtungen in ein systemsubstrat |
US20220254950A1 (en) * | 2019-05-24 | 2022-08-11 | Vuereal Inc. | Selective release and transfer of micro devices |
WO2020252577A1 (fr) * | 2019-06-18 | 2020-12-24 | Vuereal Inc. | Procédé de micro-impression à haut rendement |
WO2023015382A1 (fr) * | 2021-08-09 | 2023-02-16 | Vuereal Inc. | Libération sélective de microdispositifs |
Also Published As
Publication number | Publication date |
---|---|
TWI686919B (zh) | 2020-03-01 |
CN116682777A (zh) | 2023-09-01 |
CN109830455B (zh) | 2023-06-30 |
CN109830455A (zh) | 2019-05-31 |
DE102019101489A1 (de) | 2019-05-23 |
TW201926633A (zh) | 2019-07-01 |
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