CA2939214A1 - Systeme de fabrication d'une gaufrette de silicium a zone flottante et procede associe - Google Patents

Systeme de fabrication d'une gaufrette de silicium a zone flottante et procede associe Download PDF

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Publication number
CA2939214A1
CA2939214A1 CA2939214A CA2939214A CA2939214A1 CA 2939214 A1 CA2939214 A1 CA 2939214A1 CA 2939214 A CA2939214 A CA 2939214A CA 2939214 A CA2939214 A CA 2939214A CA 2939214 A1 CA2939214 A1 CA 2939214A1
Authority
CA
Canada
Prior art keywords
silicon
work piece
float zone
ingot
zone silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2939214A
Other languages
English (en)
Inventor
Andrew X. Yakub
James Benjamin Rosenzweig
Mark Stanley Goorsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rayton Solar Inc
Original Assignee
Rayton Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rayton Solar Inc filed Critical Rayton Solar Inc
Publication of CA2939214A1 publication Critical patent/CA2939214A1/fr
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/64—Flat crystals, e.g. plates, strips or discs
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/04—After-treatment of single crystals or homogeneous polycrystalline material with defined structure using electric or magnetic fields or particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
CA2939214A 2014-02-18 2015-02-18 Systeme de fabrication d'une gaufrette de silicium a zone flottante et procede associe Abandoned CA2939214A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461941325P 2014-02-18 2014-02-18
US61/941,325 2014-02-18
PCT/US2015/016436 WO2015126980A1 (fr) 2014-02-18 2015-02-18 Système de fabrication d'une plaquette de silicium à zone fondue flottante

Publications (1)

Publication Number Publication Date
CA2939214A1 true CA2939214A1 (fr) 2015-08-27

Family

ID=53878923

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2939214A Abandoned CA2939214A1 (fr) 2014-02-18 2015-02-18 Systeme de fabrication d'une gaufrette de silicium a zone flottante et procede associe

Country Status (8)

Country Link
EP (1) EP3108044A4 (fr)
JP (1) JP2017508706A (fr)
KR (1) KR20160145550A (fr)
CN (1) CN106133210B (fr)
AU (1) AU2015219029A1 (fr)
CA (1) CA2939214A1 (fr)
PH (1) PH12016501653A1 (fr)
WO (1) WO2015126980A1 (fr)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0517292A (ja) * 1991-07-05 1993-01-26 Nippon Steel Corp シリコンの冷却方法
JP3628108B2 (ja) * 1996-06-10 2005-03-09 株式会社イオン工学研究所 太陽電池の製造方法
FR2807074B1 (fr) * 2000-04-03 2002-12-06 Soitec Silicon On Insulator Procede et dispositif de fabrication de substrats
US8124499B2 (en) * 2006-11-06 2012-02-28 Silicon Genesis Corporation Method and structure for thick layer transfer using a linear accelerator
US7976629B2 (en) * 2008-01-01 2011-07-12 Adam Alexander Brailove Crystal film fabrication
US8481845B2 (en) * 2008-02-05 2013-07-09 Gtat Corporation Method to form a photovoltaic cell comprising a thin lamina
US8623137B1 (en) * 2008-05-07 2014-01-07 Silicon Genesis Corporation Method and device for slicing a shaped silicon ingot using layer transfer
JP5428216B2 (ja) * 2008-06-20 2014-02-26 富士電機株式会社 シリコンウェハ、半導体装置、シリコンウェハの製造方法および半導体装置の製造方法
JP2011138866A (ja) * 2009-12-28 2011-07-14 Mitsubishi Materials Corp 多結晶シリコンブロック材の製造方法、多結晶シリコンウエハの製造方法及び多結晶シリコンブロック材
CN102729342A (zh) * 2012-06-06 2012-10-17 海润光伏科技股份有限公司 用于制造高效多晶硅硅片的制备方法
US9404198B2 (en) * 2012-07-30 2016-08-02 Rayton Solar Inc. Processes and apparatuses for manufacturing wafers
CN103112093A (zh) * 2013-01-25 2013-05-22 浙江向日葵光能科技股份有限公司 一种多晶硅太阳能电池切片方法

Also Published As

Publication number Publication date
PH12016501653A1 (en) 2017-02-06
CN106133210A (zh) 2016-11-16
EP3108044A4 (fr) 2017-09-06
CN106133210B (zh) 2018-10-12
AU2015219029A1 (en) 2016-09-01
EP3108044A1 (fr) 2016-12-28
WO2015126980A1 (fr) 2015-08-27
JP2017508706A (ja) 2017-03-30
KR20160145550A (ko) 2016-12-20

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Legal Events

Date Code Title Description
FZDE Dead

Effective date: 20200218