CA2916291A1 - Amelioration du rendement de dispositifs verticaux - Google Patents

Amelioration du rendement de dispositifs verticaux Download PDF

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Publication number
CA2916291A1
CA2916291A1 CA2916291A CA2916291A CA2916291A1 CA 2916291 A1 CA2916291 A1 CA 2916291A1 CA 2916291 A CA2916291 A CA 2916291A CA 2916291 A CA2916291 A CA 2916291A CA 2916291 A1 CA2916291 A1 CA 2916291A1
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CA
Canada
Prior art keywords
layer
led
contact
devices
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA2916291A
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English (en)
Inventor
Reza Chaji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CA2916291A priority Critical patent/CA2916291A1/fr
Priority to CN201680076089.7A priority patent/CN108886073B/zh
Priority to CN202111597807.4A priority patent/CN114256392A/zh
Priority to US15/389,728 priority patent/US10784398B2/en
Priority to PCT/IB2016/057995 priority patent/WO2017109768A1/fr
Priority to DE112016006010.6T priority patent/DE112016006010T5/de
Publication of CA2916291A1 publication Critical patent/CA2916291A1/fr
Priority to US16/998,455 priority patent/US20200381582A1/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0037—Devices characterised by their operation having a MIS barrier layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
CA2916291A 2015-12-24 2015-12-24 Amelioration du rendement de dispositifs verticaux Abandoned CA2916291A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CA2916291A CA2916291A1 (fr) 2015-12-24 2015-12-24 Amelioration du rendement de dispositifs verticaux
CN201680076089.7A CN108886073B (zh) 2015-12-24 2016-12-23 竖直固态器件
CN202111597807.4A CN114256392A (zh) 2015-12-24 2016-12-23 竖直固态器件
US15/389,728 US10784398B2 (en) 2015-12-24 2016-12-23 Vertical solid state devices
PCT/IB2016/057995 WO2017109768A1 (fr) 2015-12-24 2016-12-23 Dispositifs à semi-conducteurs verticaux
DE112016006010.6T DE112016006010T5 (de) 2015-12-24 2016-12-23 Vertikale Festkörpervorrichtungen
US16/998,455 US20200381582A1 (en) 2015-12-24 2020-08-20 Vertical solid state devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA2916291A CA2916291A1 (fr) 2015-12-24 2015-12-24 Amelioration du rendement de dispositifs verticaux

Publications (1)

Publication Number Publication Date
CA2916291A1 true CA2916291A1 (fr) 2017-06-24

Family

ID=59078331

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2916291A Abandoned CA2916291A1 (fr) 2015-12-24 2015-12-24 Amelioration du rendement de dispositifs verticaux

Country Status (1)

Country Link
CA (1) CA2916291A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112016006010T5 (de) 2015-12-24 2019-01-24 Vuereal Inc. Vertikale Festkörpervorrichtungen
FR3077931A1 (fr) * 2018-02-14 2019-08-16 Centre National De La Recherche Scientifique Dispositif a semi-conducteur avec structure de passivation des surfaces recombinantes
WO2021016712A1 (fr) * 2019-07-30 2021-02-04 Vuereal Inc. Microdispositif à haut rendement
US10998464B2 (en) * 2018-08-10 2021-05-04 Samsung Electronics Co., Ltd. Flip-chip light emitting diode, manufacturing method of flip-chip light emitting diode and display device including flip-chip light emitting diode

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112016006010T5 (de) 2015-12-24 2019-01-24 Vuereal Inc. Vertikale Festkörpervorrichtungen
FR3077931A1 (fr) * 2018-02-14 2019-08-16 Centre National De La Recherche Scientifique Dispositif a semi-conducteur avec structure de passivation des surfaces recombinantes
WO2019158430A1 (fr) * 2018-02-14 2019-08-22 Centre National De La Recherche Scientifique Dispositif à semi-conducteur avec structure de passivation des surfaces recombinantes
US10998464B2 (en) * 2018-08-10 2021-05-04 Samsung Electronics Co., Ltd. Flip-chip light emitting diode, manufacturing method of flip-chip light emitting diode and display device including flip-chip light emitting diode
WO2021016712A1 (fr) * 2019-07-30 2021-02-04 Vuereal Inc. Microdispositif à haut rendement

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Date Code Title Description
FZDE Dead

Effective date: 20181227