CA2822484C - Micro-dispositif de degazeur a systeme microelectromecanique - Google Patents
Micro-dispositif de degazeur a systeme microelectromecanique Download PDFInfo
- Publication number
- CA2822484C CA2822484C CA2822484A CA2822484A CA2822484C CA 2822484 C CA2822484 C CA 2822484C CA 2822484 A CA2822484 A CA 2822484A CA 2822484 A CA2822484 A CA 2822484A CA 2822484 C CA2822484 C CA 2822484C
- Authority
- CA
- Canada
- Prior art keywords
- getter
- mems
- microdevice
- thin
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000004913 activation Effects 0.000 claims abstract description 28
- 238000003892 spreading Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 24
- 230000008569 process Effects 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 229910001935 vanadium oxide Inorganic materials 0.000 claims 1
- 230000005693 optoelectronics Effects 0.000 abstract description 4
- 238000001994 activation Methods 0.000 description 24
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 238000005247 gettering Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010943 off-gassing Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 229910001120 nichrome Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000009462 micro packaging Methods 0.000 description 3
- 229910000986 non-evaporable getter Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000009461 vacuum packaging Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/345—Arrangements for heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
Abstract
L'invention porte sur un micro-dispositif de dégazeur à MEMS (système microélectromécanique) pour réguler la pression ambiante à l'intérieur des boîtiers hermétiques qui renferment différents types de dispositifs à MEMS, photoniques ou optoélectroniques. Le micro-dispositif de dégazeur tourne autour d'une plateforme suspendue à une certaine hauteur au-dessus d'un substrat, et qui est supportée par des pattes de support ayant une faible conductance thermique. Des couches sont déposées sur la plateforme, ces couches comprenant un élément de résistance à motifs appropriés, une couche de dissipation de la chaleur, et, finalement, un matériau de dégazeur en film mince. Lorsqu'un courant électrique circule à travers le matériau de dégazeur en film mince, l'élément de résistance chauffe jusqu'à ce ledit matériau atteigne sa température d'activation. Le matériau de dégazeur absorbe alors les espèces gazeuses qui pourraient être présentes dans le boîtier hermétique, telles que des espèces gazeuses gênant éventuellement le fonctionnement des dispositifs renfermés dans les boîtiers, tout en réduisant leur durée de vie. La faible conductance thermique entre la plateforme et le substrat aide à empêcher des détériorations causées aux dispositifs environnants lorsque le micro-dispositif de dégazeur à MEMS est chauffé à sa température d'activation, et réduit également la puissance électrique requise pour atteindre la température d'activation.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CA2011/000275 WO2012122619A1 (fr) | 2011-03-11 | 2011-03-11 | Micro-dispositif de dégazeur à système microélectromécanique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2822484A1 CA2822484A1 (fr) | 2012-09-20 |
| CA2822484C true CA2822484C (fr) | 2015-07-21 |
Family
ID=46829972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2822484A Active CA2822484C (fr) | 2011-03-11 | 2011-03-11 | Micro-dispositif de degazeur a systeme microelectromecanique |
Country Status (2)
| Country | Link |
|---|---|
| CA (1) | CA2822484C (fr) |
| WO (1) | WO2012122619A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6672615B2 (ja) * | 2015-05-28 | 2020-03-25 | セイコーエプソン株式会社 | 電子デバイス、量子干渉装置、原子発振器および電子機器 |
| DE102015224519A1 (de) * | 2015-12-08 | 2017-06-08 | Robert Bosch Gmbh | MEMS-Bauteil mit zwei unterschiedlichen Innendrücken |
| FR3077878B1 (fr) | 2018-02-15 | 2022-02-04 | Commissariat Energie Atomique | Procede de fabrication d'un microbolometre a materiau sensible a base d'oxyde de vanadium |
| CN110078020B (zh) * | 2019-05-10 | 2022-02-08 | 江苏物联网研究发展中心 | 一种基于吸气剂热-电复合激活的真空烘烤工艺 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7115436B2 (en) * | 2004-02-12 | 2006-10-03 | Robert Bosch Gmbh | Integrated getter area for wafer level encapsulated microelectromechanical systems |
| FR2883099B1 (fr) * | 2005-03-14 | 2007-04-13 | Commissariat Energie Atomique | Protection d'un getter en couche mince |
| US20100139373A1 (en) * | 2005-08-19 | 2010-06-10 | Honeywell Internationa Inc. | Mems sensor package |
| WO2007136706A1 (fr) * | 2006-05-17 | 2007-11-29 | Qualcomm Mems Technologies Inc. | Déshydratant dans un dispositif mems |
| FR2952627A1 (fr) * | 2009-11-17 | 2011-05-20 | Commissariat Energie Atomique | Getter ayant deux temperatures d'activation et structure comportant ce getter |
-
2011
- 2011-03-11 CA CA2822484A patent/CA2822484C/fr active Active
- 2011-03-11 WO PCT/CA2011/000275 patent/WO2012122619A1/fr active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| CA2822484A1 (fr) | 2012-09-20 |
| WO2012122619A1 (fr) | 2012-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20130620 |