WO2012122619A1 - Micro-dispositif de dégazeur à système microélectromécanique - Google Patents

Micro-dispositif de dégazeur à système microélectromécanique Download PDF

Info

Publication number
WO2012122619A1
WO2012122619A1 PCT/CA2011/000275 CA2011000275W WO2012122619A1 WO 2012122619 A1 WO2012122619 A1 WO 2012122619A1 CA 2011000275 W CA2011000275 W CA 2011000275W WO 2012122619 A1 WO2012122619 A1 WO 2012122619A1
Authority
WO
WIPO (PCT)
Prior art keywords
getter
mems
microdevice
thin
film
Prior art date
Application number
PCT/CA2011/000275
Other languages
English (en)
Inventor
Sonia GARCIA-BLANCO
Fraser WILLIAMSON
Jean François VIENS
Original Assignee
Institut National D'optique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut National D'optique filed Critical Institut National D'optique
Priority to PCT/CA2011/000275 priority Critical patent/WO2012122619A1/fr
Priority to CA2822484A priority patent/CA2822484C/fr
Publication of WO2012122619A1 publication Critical patent/WO2012122619A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
    • B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • each supporting leg 107 has a slight tilt angle relative to the horizontal in order to connect the platform 101 to the substrate 105, recalling that both elements are spaced by the vertical gap g as previously shown in FIG. 5.
  • the surface area required for a MEMS getter microdevice 100 can be determined according to the amount of gases that is expected to be released in the microcavity during the lifetime of the package.
  • the surface area of a MEMS getter typically scales to less than 1 ⁇ 1 mm 2 .
  • the corrugations 115 can be precisely registered with respect to the serpentine pattern of the resistor element 103, so that the spatial uniformity of the getter temperature is maximized during its activation.
  • the corrugations 115 run parallel to the longest segments of the resistor element 103.
  • the resistor element 103 has been sketched in solid thick line throughout its full length in FIG. 10. However, it must be recalled that the element 103 is located below the getter thin film 111 , so that most of its length would be hidden when viewing the microdevice 150 from the top.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)

Abstract

L'invention porte sur un micro-dispositif de dégazeur à MEMS (système microélectromécanique) pour réguler la pression ambiante à l'intérieur des boîtiers hermétiques qui renferment différents types de dispositifs à MEMS, photoniques ou optoélectroniques. Le micro-dispositif de dégazeur tourne autour d'une plateforme suspendue à une certaine hauteur au-dessus d'un substrat, et qui est supportée par des pattes de support ayant une faible conductance thermique. Des couches sont déposées sur la plateforme, ces couches comprenant un élément de résistance à motifs appropriés, une couche de dissipation de la chaleur, et, finalement, un matériau de dégazeur en film mince. Lorsqu'un courant électrique circule à travers le matériau de dégazeur en film mince, l'élément de résistance chauffe jusqu'à ce ledit matériau atteigne sa température d'activation. Le matériau de dégazeur absorbe alors les espèces gazeuses qui pourraient être présentes dans le boîtier hermétique, telles que des espèces gazeuses gênant éventuellement le fonctionnement des dispositifs renfermés dans les boîtiers, tout en réduisant leur durée de vie. La faible conductance thermique entre la plateforme et le substrat aide à empêcher des détériorations causées aux dispositifs environnants lorsque le micro-dispositif de dégazeur à MEMS est chauffé à sa température d'activation, et réduit également la puissance électrique requise pour atteindre la température d'activation.
PCT/CA2011/000275 2011-03-11 2011-03-11 Micro-dispositif de dégazeur à système microélectromécanique WO2012122619A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CA2011/000275 WO2012122619A1 (fr) 2011-03-11 2011-03-11 Micro-dispositif de dégazeur à système microélectromécanique
CA2822484A CA2822484C (fr) 2011-03-11 2011-03-11 Micro-dispositif de degazeur a systeme microelectromecanique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CA2011/000275 WO2012122619A1 (fr) 2011-03-11 2011-03-11 Micro-dispositif de dégazeur à système microélectromécanique

Publications (1)

Publication Number Publication Date
WO2012122619A1 true WO2012122619A1 (fr) 2012-09-20

Family

ID=46829972

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2011/000275 WO2012122619A1 (fr) 2011-03-11 2011-03-11 Micro-dispositif de dégazeur à système microélectromécanique

Country Status (2)

Country Link
CA (1) CA2822484C (fr)
WO (1) WO2012122619A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225751A (ja) * 2015-05-28 2016-12-28 セイコーエプソン株式会社 電子デバイス、量子干渉装置、原子発振器、心磁計、発振器、電子機器、移動体および電子デバイスの製造方法
CN108367912A (zh) * 2015-12-08 2018-08-03 罗伯特·博世有限公司 具有激光激活的吸气剂材料的传感器元件
US11181424B2 (en) 2018-02-15 2021-11-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for manufacturing a microbolometer containing vanadium oxide-based sensitive material

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110078020B (zh) * 2019-05-10 2022-02-08 江苏物联网研究发展中心 一种基于吸气剂热-电复合激活的真空烘烤工艺

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115436B2 (en) * 2004-02-12 2006-10-03 Robert Bosch Gmbh Integrated getter area for wafer level encapsulated microelectromechanical systems
US20080213539A1 (en) * 2005-03-14 2008-09-04 Commissariat A L'energie Atomique Thin Film Getter Protection
JP2011131207A (ja) * 2009-11-17 2011-07-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives ２つの活性化温度を有するゲッタ及びこのゲッタを備える構造
EP2362230A1 (fr) * 2010-02-18 2011-08-31 Honeywell International Inc. Paquet de capteurs MEMS
US8040587B2 (en) * 2006-05-17 2011-10-18 Qualcomm Mems Technologies, Inc. Desiccant in a MEMS device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115436B2 (en) * 2004-02-12 2006-10-03 Robert Bosch Gmbh Integrated getter area for wafer level encapsulated microelectromechanical systems
US20080213539A1 (en) * 2005-03-14 2008-09-04 Commissariat A L'energie Atomique Thin Film Getter Protection
US8040587B2 (en) * 2006-05-17 2011-10-18 Qualcomm Mems Technologies, Inc. Desiccant in a MEMS device
JP2011131207A (ja) * 2009-11-17 2011-07-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives ２つの活性化温度を有するゲッタ及びこのゲッタを備える構造
EP2362230A1 (fr) * 2010-02-18 2011-08-31 Honeywell International Inc. Paquet de capteurs MEMS

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KOVACS: "Micromachined Transducers Sourcebook", 1998, article KOVACS *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225751A (ja) * 2015-05-28 2016-12-28 セイコーエプソン株式会社 電子デバイス、量子干渉装置、原子発振器、心磁計、発振器、電子機器、移動体および電子デバイスの製造方法
CN108367912A (zh) * 2015-12-08 2018-08-03 罗伯特·博世有限公司 具有激光激活的吸气剂材料的传感器元件
US11181424B2 (en) 2018-02-15 2021-11-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for manufacturing a microbolometer containing vanadium oxide-based sensitive material

Also Published As

Publication number Publication date
CA2822484A1 (fr) 2012-09-20
CA2822484C (fr) 2015-07-21

Similar Documents

Publication Publication Date Title
US8395229B2 (en) MEMS-based getter microdevice
US7309865B2 (en) Electronic device having infrared sensing elements
US9718679B2 (en) Integrated heater for gettering or outgassing activation
JP7045430B2 (ja) ウェハレベルパッケージ内の熱赤外線センサアレイ
EP0734589B1 (fr) Microboitiers integres de silicium sous vide pour dispositifs ir
JPWO2004061983A1 (ja) 電子デバイスおよびその製造方法
CA2822484C (fr) Micro-dispositif de degazeur a systeme microelectromecanique
EP2986959B1 (fr) Capteur infrarouge encapsulé dans un film mince
WO2010032569A1 (fr) Dispositif électronique
US20230131181A1 (en) Infrared radiator element and methods
JP4601629B2 (ja) マイクロ加工熱線真空センサ
US20210176828A1 (en) High-temperature infrared radiator element and methods
US11359971B2 (en) Detector of electromagnetic radiation and in particular infrared radiation, and process for producing said detector
US11209353B2 (en) Infrared device
JP4411974B2 (ja) 電子デバイスの製造方法
Garcia-Blanco et al. Low-temperature vacuum hermetic wafer-level package for uncooled microbolometer FPAs
JP2005197151A5 (fr)
EP2172755A1 (fr) Capteur à infrarouge avec filtre à bande passante et cavité sous vide
JP2013254916A (ja) 電子部品およびその製造方法
Dave et al. Micromachined infrared sensors with device-level encapsulation
Carr et al. Investigating Micromachined Thermal Emitters for Infrared Applications

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11861299

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2822484

Country of ref document: CA

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11861299

Country of ref document: EP

Kind code of ref document: A1