CA2804222C - Heterojunction solar cell - Google Patents
Heterojunction solar cell Download PDFInfo
- Publication number
- CA2804222C CA2804222C CA2804222A CA2804222A CA2804222C CA 2804222 C CA2804222 C CA 2804222C CA 2804222 A CA2804222 A CA 2804222A CA 2804222 A CA2804222 A CA 2804222A CA 2804222 C CA2804222 C CA 2804222C
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor layer
- bandgap
- depletion
- solar cell
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 394
- 239000000203 mixture Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 39
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000756 V alloy Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 225
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- -1 GaInP Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/852,574 | 2010-08-09 | ||
| US12/852,574 US8642883B2 (en) | 2010-08-09 | 2010-08-09 | Heterojunction solar cell |
| PCT/US2011/043124 WO2012021227A2 (en) | 2010-08-09 | 2011-07-07 | Heterojunction solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2804222A1 CA2804222A1 (en) | 2012-02-16 |
| CA2804222C true CA2804222C (en) | 2018-02-20 |
Family
ID=44629419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2804222A Active CA2804222C (en) | 2010-08-09 | 2011-07-07 | Heterojunction solar cell |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8642883B2 (ru) |
| EP (2) | EP3550617B1 (ru) |
| JP (2) | JP6199185B2 (ru) |
| CA (1) | CA2804222C (ru) |
| WO (1) | WO2012021227A2 (ru) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120104460A1 (en) * | 2010-11-03 | 2012-05-03 | Alta Devices, Inc. | Optoelectronic devices including heterojunction |
| WO2010048547A2 (en) * | 2008-10-23 | 2010-04-29 | Alta Devices, Inc. | Photovoltaic device with increased light trapping |
| WO2010048543A2 (en) * | 2008-10-23 | 2010-04-29 | Alta Devices, Inc. | Thin absorber layer of a photovoltaic device |
| EP2351097A2 (en) * | 2008-10-23 | 2011-08-03 | Alta Devices, Inc. | Photovoltaic device |
| US20100319764A1 (en) * | 2009-06-23 | 2010-12-23 | Solar Junction Corp. | Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells |
| US9691921B2 (en) | 2009-10-14 | 2017-06-27 | Alta Devices, Inc. | Textured metallic back reflector |
| US20170141256A1 (en) | 2009-10-23 | 2017-05-18 | Alta Devices, Inc. | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
| US11271128B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
| US9768329B1 (en) | 2009-10-23 | 2017-09-19 | Alta Devices, Inc. | Multi-junction optoelectronic device |
| US20150380576A1 (en) | 2010-10-13 | 2015-12-31 | Alta Devices, Inc. | Optoelectronic device with dielectric layer and method of manufacture |
| US9502594B2 (en) | 2012-01-19 | 2016-11-22 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
| US20110114163A1 (en) * | 2009-11-18 | 2011-05-19 | Solar Junction Corporation | Multijunction solar cells formed on n-doped substrates |
| US10283657B1 (en) * | 2010-01-08 | 2019-05-07 | Magnolia Optical Technologies, Inc. | Broadband photovoltaic sheets and method of constructing the same |
| US20110232730A1 (en) | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
| US9214580B2 (en) | 2010-10-28 | 2015-12-15 | Solar Junction Corporation | Multi-junction solar cell with dilute nitride sub-cell having graded doping |
| US8962991B2 (en) | 2011-02-25 | 2015-02-24 | Solar Junction Corporation | Pseudomorphic window layer for multijunction solar cells |
| WO2013074530A2 (en) | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
| US11038080B2 (en) | 2012-01-19 | 2021-06-15 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
| CN102623524A (zh) * | 2012-04-06 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种半导体太阳能电池及其制作方法 |
| US9153724B2 (en) * | 2012-04-09 | 2015-10-06 | Solar Junction Corporation | Reverse heterojunctions for solar cells |
| US8767867B1 (en) | 2012-05-16 | 2014-07-01 | Cypress Semiconductor Corporation | Integrated control of power supply and power line communications |
| US9530911B2 (en) * | 2013-03-14 | 2016-12-27 | The Boeing Company | Solar cell structures for improved current generation and collection |
| US9590131B2 (en) * | 2013-03-27 | 2017-03-07 | Alliance For Sustainable Energy, Llc | Systems and methods for advanced ultra-high-performance InP solar cells |
| EP3103142B1 (en) | 2014-02-05 | 2020-08-19 | Array Photonics, Inc. | Monolithic multijunction power converter |
| US20170110613A1 (en) | 2015-10-19 | 2017-04-20 | Solar Junction Corporation | High efficiency multijunction photovoltaic cells |
| RU2611569C1 (ru) * | 2015-12-09 | 2017-02-28 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | Метаморфный фотопреобразователь |
| DE102016208113B4 (de) * | 2016-05-11 | 2022-07-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mehrfachsolarzelle und deren Verwendung |
| KR101931712B1 (ko) * | 2016-12-28 | 2018-12-24 | 엘지전자 주식회사 | 화합물 반도체 태양전지 |
| WO2019010037A1 (en) | 2017-07-06 | 2019-01-10 | Solar Junction Corporation | HYBRID MOCVD / MBE EPITAXIAL GROWTH OF MULTI-JUNCTION SOLAR CELLS ADAPTED TO THE HIGH-PERFORMANCE NETWORK |
| WO2019067553A1 (en) | 2017-09-27 | 2019-04-04 | Solar Junction Corporation | SHORT-LENGTH WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING DILUTED NITRIDE LAYER |
| US11211514B2 (en) | 2019-03-11 | 2021-12-28 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5513939A (en) * | 1978-07-17 | 1980-01-31 | Shunpei Yamazaki | Photoelectronic conversion semiconductor device |
| JPS6235681A (ja) * | 1985-08-09 | 1987-02-16 | Canon Inc | 光電変換素子 |
| GB8524070D0 (en) * | 1985-09-30 | 1985-11-06 | Gen Electric Co Plc | Semiconductor devices |
| JPH0936399A (ja) * | 1995-07-25 | 1997-02-07 | Oki Electric Ind Co Ltd | 太陽電池 |
| US6300557B1 (en) | 1998-10-09 | 2001-10-09 | Midwest Research Institute | Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters |
| JP2000332268A (ja) * | 1999-05-19 | 2000-11-30 | Mitsubishi Heavy Ind Ltd | 薄膜多結晶シリコン、それを用いた太陽電池及び薄膜多結晶シリコンの製造方法 |
| JP2004296658A (ja) * | 2003-03-26 | 2004-10-21 | Sharp Corp | 多接合太陽電池およびその電流整合方法 |
| JP2004319934A (ja) * | 2003-04-21 | 2004-11-11 | Sharp Corp | 多接合型太陽電池およびその製造方法 |
| US10069026B2 (en) | 2005-12-19 | 2018-09-04 | The Boeing Company | Reduced band gap absorber for solar cells |
| US20090078310A1 (en) | 2007-09-24 | 2009-03-26 | Emcore Corporation | Heterojunction Subcells In Inverted Metamorphic Multijunction Solar Cells |
| US20100006143A1 (en) * | 2007-04-26 | 2010-01-14 | Welser Roger E | Solar Cell Devices |
| US8866005B2 (en) * | 2008-10-17 | 2014-10-21 | Kopin Corporation | InGaP heterojunction barrier solar cells |
| US20100147366A1 (en) | 2008-12-17 | 2010-06-17 | Emcore Solar Power, Inc. | Inverted Metamorphic Multijunction Solar Cells with Distributed Bragg Reflector |
-
2010
- 2010-08-09 US US12/852,574 patent/US8642883B2/en active Active
-
2011
- 2011-07-07 JP JP2013524080A patent/JP6199185B2/ja active Active
- 2011-07-07 EP EP19157479.7A patent/EP3550617B1/en active Active
- 2011-07-07 WO PCT/US2011/043124 patent/WO2012021227A2/en active Application Filing
- 2011-07-07 EP EP11738883.5A patent/EP2603934A2/en not_active Ceased
- 2011-07-07 CA CA2804222A patent/CA2804222C/en active Active
-
2017
- 2017-08-22 JP JP2017159338A patent/JP6397975B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP6397975B2 (ja) | 2018-09-26 |
| EP3550617B1 (en) | 2021-12-15 |
| US8642883B2 (en) | 2014-02-04 |
| WO2012021227A2 (en) | 2012-02-16 |
| WO2012021227A3 (en) | 2012-12-27 |
| EP2603934A2 (en) | 2013-06-19 |
| JP6199185B2 (ja) | 2017-09-20 |
| EP3550617A1 (en) | 2019-10-09 |
| JP2013533645A (ja) | 2013-08-22 |
| JP2018014505A (ja) | 2018-01-25 |
| CA2804222A1 (en) | 2012-02-16 |
| US20120031478A1 (en) | 2012-02-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request |
Effective date: 20140613 |