CA2597623C - System and process for high-density,low-energy plasma enhanced vapor phase epitaxy - Google Patents

System and process for high-density,low-energy plasma enhanced vapor phase epitaxy Download PDF

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Publication number
CA2597623C
CA2597623C CA2597623A CA2597623A CA2597623C CA 2597623 C CA2597623 C CA 2597623C CA 2597623 A CA2597623 A CA 2597623A CA 2597623 A CA2597623 A CA 2597623A CA 2597623 C CA2597623 C CA 2597623C
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Prior art keywords
plasma
sources
deposition chamber
substrate
gases
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Expired - Fee Related
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CA2597623A
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English (en)
French (fr)
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CA2597623A1 (en
Inventor
Hans Von Kaenel
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Oerlikon Metco AG
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Sulzer Metco AG
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
CA2597623A 2005-02-28 2006-02-28 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy Expired - Fee Related CA2597623C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US65720805P 2005-02-28 2005-02-28
US60/657,208 2005-02-28
PCT/IB2006/000421 WO2006097804A2 (en) 2005-02-28 2006-02-28 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy

Publications (2)

Publication Number Publication Date
CA2597623A1 CA2597623A1 (en) 2006-09-21
CA2597623C true CA2597623C (en) 2015-07-14

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CA2597623A Expired - Fee Related CA2597623C (en) 2005-02-28 2006-02-28 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy

Country Status (10)

Country Link
US (2) US8647434B2 (https=)
EP (1) EP1872383A2 (https=)
JP (1) JP5214251B2 (https=)
KR (2) KR101366181B1 (https=)
CN (1) CN101128911B (https=)
AU (1) AU2006224282B2 (https=)
CA (1) CA2597623C (https=)
RU (1) RU2462786C2 (https=)
SG (1) SG160345A1 (https=)
WO (1) WO2006097804A2 (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1513233B1 (en) * 2003-09-05 2008-10-29 Epispeed S.A. InGaAs/GaAs lasers on Silicon produced by LEPECVD and MOCVD
KR100754404B1 (ko) * 2006-05-25 2007-08-31 삼성전자주식회사 확산튜브와, 확산공정용 도펀트 소스 및 상기 확산튜브와도펀트 소스를 이용한 확산방법
JP5041883B2 (ja) * 2007-06-07 2012-10-03 昭和電工株式会社 Ｉｉｉ族窒化物半導体層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法
JP4982259B2 (ja) * 2007-06-14 2012-07-25 昭和電工株式会社 Ｉｉｉ族窒化物化合物半導体発光素子の製造方法
EP2207911A1 (en) * 2007-08-17 2010-07-21 Epispeed S.A. Apparatus and method for producing epitaxial layers
JP2012504873A (ja) 2008-10-03 2012-02-23 ビーコ プロセス イクイップメント， インコーポレイテッド 気相エピタキシーシステム
CN101494151B (zh) * 2009-03-05 2013-11-13 苏州晶能科技有限公司 高效率的一维线性等离子体清洗磁控阴极装置
JP2011213557A (ja) * 2010-04-01 2011-10-27 Hitachi Cable Ltd 導電性ｉｉｉ族窒化物単結晶基板の製造方法
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
US8884525B2 (en) * 2011-03-22 2014-11-11 Advanced Energy Industries, Inc. Remote plasma source generating a disc-shaped plasma
DE102012201953A1 (de) * 2012-02-09 2013-08-14 Singulus Technologies Ag Verfahren und Vorrichtung zur Passivierung von Solarzellen mit einer Aluminiumoxid-Schicht
CN102534511B (zh) * 2012-02-28 2013-10-16 东北大学 一种气相沉积薄膜的装置及其使用方法
KR102152786B1 (ko) * 2012-07-13 2020-09-08 갈리움 엔터프라이지즈 피티와이 엘티디 필름 형성 장치 및 방법
KR101456549B1 (ko) * 2012-09-10 2014-10-31 한국표준과학연구원 플라즈마 도움 화학 기상 증착 장치 및 플라즈마 도움 화학 기상 증착 방법
RU2548578C2 (ru) * 2013-08-19 2015-04-20 Валерий Анатольевич Буробин Способ получения эпитаксиального слоя бинарного полупроводникового материала на монокристаллической подложке посредством металлоорганического химического осаждения из газовой фазы
US9378941B2 (en) * 2013-10-02 2016-06-28 Applied Materials, Inc. Interface treatment of semiconductor surfaces with high density low energy plasma
CN104752162A (zh) * 2013-12-31 2015-07-01 江西省昌大光电科技有限公司 一种半绝缘GaN薄膜及其制备方法
CN103806093B (zh) * 2014-02-17 2017-01-18 清华大学 基于icp的化合物半导体的外延生长装置及方法
RU2578870C2 (ru) * 2014-03-26 2016-03-27 Открытое акционерное общество "Ордена Трудового Красного Знамени Научно-исследовательский физико-химический институт им. Л.Я. Карпова" (ОАО "НИФХИ им. Л.Я. Карпова") Способ выращивания пленки нитрида галлия
CN103938272A (zh) * 2014-04-03 2014-07-23 清华大学 等离子体辅助的外延生长装置及方法
RU2570099C1 (ru) * 2014-08-05 2015-12-10 Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") Способ изготовления полупроводниковой гетероструктуры
EP3176293A4 (en) * 2014-08-29 2018-07-04 Soko Kagaku Co., Ltd. Template for epitaxial growth and method of preparing same, and nitride semiconductor device
WO2018081144A1 (en) 2016-10-24 2018-05-03 Kla-Tencor Corporation Process module(s) integrated into a metrology and/or inspection tool
WO2019005144A1 (en) * 2017-06-30 2019-01-03 Intel Corporation HIGH FLOW MOLECULAR BEAM EPITAXY AND SELECTIVE EPITAXIAL APPARATUS
RU2657674C1 (ru) * 2017-08-14 2018-06-14 Федеральное государственное бюджетное учреждение науки Институт общей и неорганической химии им. Н.С. Курнакова Российской академии наук (ИОНХ РАН) Способ получения гетероструктуры Mg(Fe1-xGax)2O4/Si со стабильной межфазной границей
CN107675141B (zh) * 2017-10-25 2023-08-04 南昌大学 一种用于制备氮化物材料的装置
US10892137B2 (en) * 2018-09-12 2021-01-12 Entegris, Inc. Ion implantation processes and apparatus using gallium
DE102018220678A1 (de) * 2018-11-30 2020-06-04 Thyssenkrupp Ag Verfahren zum PVD-Beschichten von Werkstücken
RU2715080C1 (ru) * 2018-12-18 2020-02-25 Федеральное государственное бюджетное учреждение науки Физический институт им. П.Н. Лебедева Российской академии наук (ФИАН) Способ наращивания монокристаллических слоёв полупроводниковых структур
CN109817518B (zh) * 2019-01-18 2020-03-10 重庆市妙格科技有限公司 一种发光二极管原材料加热磷扩装置
CN109830419B (zh) * 2019-01-24 2020-05-19 中国原子能科学研究院 一种微型潘宁离子源
US11519095B2 (en) * 2019-04-22 2022-12-06 Peng DU MBE system with direct evaporation pump to cold panel
RU2723477C1 (ru) * 2019-04-26 2020-06-11 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Нижегородский государственный университет им. Н.И. Лобачевского" Узел фиксации нагреваемой подложки в вакуумной камере (варианты)
US11150120B2 (en) 2019-09-22 2021-10-19 Applied Materials, Inc. Low temperature thermal flow ratio controller
JP7577093B2 (ja) * 2022-06-29 2024-11-01 東京エレクトロン株式会社 プラズマ処理システムおよびプラズマ処理方法
CN115992346B (zh) * 2023-02-16 2024-08-06 北京理工大学 一种多功能的离子沉积薄膜制备装置及薄膜沉积方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4368092A (en) 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
JPH0652716B2 (ja) 1984-08-24 1994-07-06 日本電信電話株式会社 半導体結晶性膜製造装置
JPS61135126A (ja) * 1984-12-06 1986-06-23 Hitachi Ltd プラズマ処理装置
US4948458A (en) 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
JPH03146656A (ja) * 1989-11-02 1991-06-21 Hitachi Ltd 膜形成装置及び膜形成方法
US5633192A (en) 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
KR100321325B1 (ko) 1993-09-17 2002-06-20 가나이 쓰도무 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치
JPH07288237A (ja) * 1994-04-15 1995-10-31 Nippon Steel Corp プラズマ励起セル装置
US5783101A (en) 1994-09-16 1998-07-21 Applied Materials, Inc. High etch rate residue free metal etch process with low frequency high power inductive coupled plasma
JP3769059B2 (ja) * 1996-02-02 2006-04-19 雅弘 西川 超音波・プラズマ・粒子ビーム複合プロセス装置及び薄膜の形成方法並びに表面の平滑化方法
US5788799A (en) 1996-06-11 1998-08-04 Applied Materials, Inc. Apparatus and method for cleaning of semiconductor process chamber surfaces
JPH1012908A (ja) * 1996-06-21 1998-01-16 Toshiba Corp 半導体装置及び微粒子半導体膜の製造方法及び光電変換素子
WO1998058099A1 (de) 1997-06-13 1998-12-23 Balzers Hochvakuum Ag Verfahren zur herstellung beschichteter werkstücke, verwendungen des verfahrens und anlage hierfür
US6472300B2 (en) 1997-11-18 2002-10-29 Technologies And Devices International, Inc. Method for growing p-n homojunction-based structures utilizing HVPE techniques
US6811611B2 (en) 2000-03-02 2004-11-02 Tokyo Electron Limited Esrf source for ion plating epitaxial deposition
US6573164B2 (en) 2001-03-30 2003-06-03 Technologies And Devices International, Inc. Method of epitaxially growing device structures with sharp layer interfaces utilizing HVPE
US6992011B2 (en) 2003-01-15 2006-01-31 Tokyo Electron Limited Method and apparatus for removing material from chamber and wafer surfaces by high temperature hydrogen-containing plasma
JP2004288964A (ja) * 2003-03-24 2004-10-14 Sumitomo Electric Ind Ltd ＧａＮ結晶の成長方法
US6818061B2 (en) 2003-04-10 2004-11-16 Honeywell International, Inc. Method for growing single crystal GaN on silicon
EP1774562B1 (en) 2004-06-08 2012-02-22 Dichroic cell s.r.l. System for low-energy plasma-enhanced chemical vapor deposition
WO2008000846A1 (es) 2006-06-19 2008-01-03 Natraceutical S.A. Método para la esterilización de materiales de cacao mediante co2 supercrítico

Also Published As

Publication number Publication date
KR20120054093A (ko) 2012-05-29
JP2008532306A (ja) 2008-08-14
CN101128911B (zh) 2010-09-08
JP5214251B2 (ja) 2013-06-19
KR101358966B1 (ko) 2014-02-21
AU2006224282B2 (en) 2012-02-02
US8647434B2 (en) 2014-02-11
CA2597623A1 (en) 2006-09-21
US20080152903A1 (en) 2008-06-26
CN101128911A (zh) 2008-02-20
US20130260537A1 (en) 2013-10-03
SG160345A1 (en) 2010-04-29
KR20070114361A (ko) 2007-12-03
WO2006097804A2 (en) 2006-09-21
RU2007135977A (ru) 2009-04-10
WO2006097804A3 (en) 2007-01-18
US9466479B2 (en) 2016-10-11
EP1872383A2 (en) 2008-01-02
RU2462786C2 (ru) 2012-09-27
WO2006097804B1 (en) 2007-02-15
AU2006224282A1 (en) 2006-09-21
KR101366181B1 (ko) 2014-02-24

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