CA2553122A1 - Appareil et procede de depot de vapeur chimique ameliore au plasma - Google Patents

Appareil et procede de depot de vapeur chimique ameliore au plasma Download PDF

Info

Publication number
CA2553122A1
CA2553122A1 CA002553122A CA2553122A CA2553122A1 CA 2553122 A1 CA2553122 A1 CA 2553122A1 CA 002553122 A CA002553122 A CA 002553122A CA 2553122 A CA2553122 A CA 2553122A CA 2553122 A1 CA2553122 A1 CA 2553122A1
Authority
CA
Canada
Prior art keywords
electrodes
processing system
substrate
substrate processing
deposition chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002553122A
Other languages
English (en)
Inventor
Marvin S. Keshner
Paul H. Mcclelland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FOREFRONT INNOVATIVE TECHNOLOGIES Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2553122A1 publication Critical patent/CA2553122A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CA002553122A 2004-09-14 2004-09-14 Appareil et procede de depot de vapeur chimique ameliore au plasma Abandoned CA2553122A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2004/030275 WO2006031234A1 (fr) 2004-09-14 2004-09-14 Appareil et procede de depot de vapeur chimique ameliore au plasma

Publications (1)

Publication Number Publication Date
CA2553122A1 true CA2553122A1 (fr) 2006-03-23

Family

ID=34958815

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002553122A Abandoned CA2553122A1 (fr) 2004-09-14 2004-09-14 Appareil et procede de depot de vapeur chimique ameliore au plasma

Country Status (6)

Country Link
EP (1) EP1799879A1 (fr)
JP (1) JP2008513978A (fr)
CN (1) CN101018887A (fr)
AU (1) AU2004323359A1 (fr)
CA (1) CA2553122A1 (fr)
WO (1) WO2006031234A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6407694B2 (ja) * 2014-12-16 2018-10-17 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101931692B1 (ko) * 2017-10-11 2018-12-21 주식회사 유진테크 배치식 플라즈마 기판처리장치
JP6950956B2 (ja) * 2017-12-28 2021-10-13 国立研究開発法人産業技術総合研究所 アッセイ装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4462333A (en) * 1982-10-27 1984-07-31 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
US4520757A (en) * 1982-10-27 1985-06-04 Energy Conversion Devices, Inc. Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus
CA2060917A1 (fr) * 1991-03-12 1992-09-13 Milam Pender Dispositif de depot de vapeur chimique, ameliore par le plasma
DE4421103A1 (de) * 1994-06-16 1995-12-21 Siemens Solar Gmbh Verfahren und Vorrichtung zur plasmagestützten Abscheidung dünner Schichten
US6135053A (en) * 1997-07-16 2000-10-24 Canon Kabushiki Kaisha Apparatus for forming a deposited film by plasma chemical vapor deposition
JP3844274B2 (ja) * 1998-06-25 2006-11-08 独立行政法人産業技術総合研究所 プラズマｃｖｄ装置及びプラズマｃｖｄ方法

Also Published As

Publication number Publication date
AU2004323359A1 (en) 2006-03-23
JP2008513978A (ja) 2008-05-01
WO2006031234A1 (fr) 2006-03-23
CN101018887A (zh) 2007-08-15
EP1799879A1 (fr) 2007-06-27

Similar Documents

Publication Publication Date Title
US20070048456A1 (en) Plasma enhanced chemical vapor deposition apparatus and method
US20080139003A1 (en) Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
US7464663B2 (en) Roll-vortex plasma chemical vapor deposition system
US20100144122A1 (en) Hybrid chemical vapor deposition process combining hot-wire cvd and plasma-enhanced cvd
US20100024729A1 (en) Methods and apparatuses for uniform plasma generation and uniform thin film deposition
WO2007111028A1 (fr) procédé pour la formation d'un film de silicium microcristallin et cellule solaire
JP5659225B2 (ja) プラズマ堆積ソースおよび薄膜を堆積させるための方法
US11610764B2 (en) Plasma source and method of operating the same
US20130059092A1 (en) Method and apparatus for gas distribution and plasma application in a linear deposition chamber
JP4273382B2 (ja) プラズマ処理装置と薄膜形成方法
JP4279217B2 (ja) プラズマ処理装置及びこれを用いた太陽電池の製造方法
CA2553122A1 (fr) Appareil et procede de depot de vapeur chimique ameliore au plasma
US6727456B2 (en) Deposited film forming method and deposited film forming apparatus
KR20070053317A (ko) 플라즈마 강화 화학 기상 성장 장치 및 방법
JP3759076B2 (ja) Ｃａｔ−ＰＥＣＶＤ法及び膜処理システム
JP2012507133A (ja) 基板上にプロセシングされる材料の均一性を改善する堆積装置及びこれを使用する方法
JP3894862B2 (ja) Ｃａｔ−ＰＥＣＶＤ法
JP3805279B2 (ja) Ｃａｔ−ＰＥＣＶＤ装置およびそれを備えた膜処理システム
JP3759075B2 (ja) Ｃａｔ−ＰＥＣＶＤ法、それを用いて形成した膜、その膜を備えた薄膜デバイス、および膜処理システム
JP4129202B2 (ja) Ｃａｔ−ＰＥＣＶＤ法
JPH03264676A (ja) 連続堆積膜形成装置
JP3759071B2 (ja) Ｃａｔ−ＰＥＣＶＤ法
JP3759077B2 (ja) Ｃａｔ−ＰＥＣＶＤ法及び膜処理システム
JP3759072B2 (ja) Ｃａｔ−ＰＥＣＶＤ法
JPH07188929A (ja) Ｃｖｄ方法及びｃｖｄ装置

Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued
FZDE Discontinued

Effective date: 20120914