CA2509257A1 - Procede de fabrication de nanotubes avec modele sacrificiel - Google Patents
Procede de fabrication de nanotubes avec modele sacrificiel Download PDFInfo
- Publication number
- CA2509257A1 CA2509257A1 CA002509257A CA2509257A CA2509257A1 CA 2509257 A1 CA2509257 A1 CA 2509257A1 CA 002509257 A CA002509257 A CA 002509257A CA 2509257 A CA2509257 A CA 2509257A CA 2509257 A1 CA2509257 A1 CA 2509257A1
- Authority
- CA
- Canada
- Prior art keywords
- nanowire
- recited
- nanotube
- sheath
- nanotubes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000002071 nanotube Substances 0.000 title claims abstract description 230
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 239000002070 nanowire Substances 0.000 claims abstract description 143
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 99
- 238000000034 method Methods 0.000 claims abstract description 88
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 82
- 239000000463 material Substances 0.000 claims abstract description 78
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 238000005266 casting Methods 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 75
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 24
- 230000003647 oxidation Effects 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims description 2
- 239000002243 precursor Substances 0.000 claims description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000002178 crystalline material Substances 0.000 claims 1
- 239000000539 dimer Substances 0.000 claims 1
- -1 elemental group IV Substances 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims 1
- 229920001296 polysiloxane Polymers 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
- 238000003491 array Methods 0.000 abstract description 20
- 238000013459 approach Methods 0.000 abstract description 13
- 239000011787 zinc oxide Substances 0.000 abstract description 11
- 229910052984 zinc sulfide Inorganic materials 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000004627 transmission electron microscopy Methods 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract description 2
- 230000009467 reduction Effects 0.000 abstract description 2
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000011343 solid material Substances 0.000 abstract 1
- 239000011162 core material Substances 0.000 description 40
- 239000010410 layer Substances 0.000 description 32
- 230000015572 biosynthetic process Effects 0.000 description 22
- 239000000377 silicon dioxide Substances 0.000 description 22
- 229920000052 poly(p-xylylene) Polymers 0.000 description 11
- 239000012528 membrane Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000011148 porous material Substances 0.000 description 8
- 239000002086 nanomaterial Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 229910052725 zinc Inorganic materials 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 238000002524 electron diffraction data Methods 0.000 description 3
- 238000000619 electron energy-loss spectrum Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000002073 nanorod Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000005424 photoluminescence Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- 102000029749 Microtubule Human genes 0.000 description 2
- 108091022875 Microtubule Proteins 0.000 description 2
- 229910003910 SiCl4 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- JWFFDNVGFHXGIB-UHFFFAOYSA-N [F].[Xe] Chemical compound [F].[Xe] JWFFDNVGFHXGIB-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910003480 inorganic solid Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 210000004688 microtubule Anatomy 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002114 nanocomposite Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- OOLUVSIJOMLOCB-UHFFFAOYSA-N 1633-22-3 Chemical compound C1CC(C=C2)=CC=C2CCC2=CC=C1C=C2 OOLUVSIJOMLOCB-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 241000854711 Shinkai Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000011953 bioanalysis Methods 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 239000002103 nanocoating Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002620 silicon nanotube Substances 0.000 description 1
- 229910021430 silicon nanotube Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/602—Nanotubes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Composite Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Cette invention se rapporte à des procédés servant à fabriquer des nanotubes uniformes et consistant à cet effet à synthétiser des nanotubes sous la forme de gaines sur des modèles de nanofils, par exemple en utilisant la technique de dépôt en phase vapeur par procédé chimique. On utilise par exemple des nanofils en oxyde de zinc monocristallin (ZnO) comme modèles sur lesquels est déposé par croissance épitaxiale du nitrure de gallium (GaN). Les modèles de ZnO sont ensuite retirés, par exemple par réduction thermique et évaporation. Les nanotubes de GaN monocristallins ainsi terminés possèdent de préférence des diamètres internes compris entre 30 et 200 nm, et des épaisseurs de paroi comprises entre 5 et 50 nm. Des études par microscopie électronique à transmission ont montré que les nanotubes ainsi produits sont monocristallins avec une structure de wurtzite et ils sont orientés dans la direction <001>. Cette invention concerne en particulier des nanotubes monocristallins en matériaux ayant une structure cristalline non lamellaire. Des approches de <= moulage épitaxiale >= similaires peuvent être utilisées pour produire des réseaux et des nanotubes monocristallins en d'autres matériaux solides et en semi-conducteurs. Cette invention concerne en outre la fabrication de nanotubes à gaines multiples et de nanotubes à multiples segments longitudinaux.
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US43210402P | 2002-12-09 | 2002-12-09 | |
| US60/432,104 | 2002-12-09 | ||
| US45403803P | 2003-03-11 | 2003-03-11 | |
| US60/454,038 | 2003-03-11 | ||
| US46134603P | 2003-04-08 | 2003-04-08 | |
| US60/461,346 | 2003-04-08 | ||
| PCT/US2003/039200 WO2004111319A2 (fr) | 2002-12-09 | 2003-12-08 | Procede de fabrication de nanotubes avec modele sacrificiel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2509257A1 true CA2509257A1 (fr) | 2004-12-23 |
Family
ID=33556317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002509257A Abandoned CA2509257A1 (fr) | 2002-12-09 | 2003-12-08 | Procede de fabrication de nanotubes avec modele sacrificiel |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1583858A4 (fr) |
| JP (1) | JP2006512218A (fr) |
| KR (1) | KR20050085437A (fr) |
| AU (1) | AU2003304214A1 (fr) |
| CA (1) | CA2509257A1 (fr) |
| WO (1) | WO2004111319A2 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109544555A (zh) * | 2018-11-26 | 2019-03-29 | 陕西师范大学 | 基于生成式对抗网络的细小裂缝分割方法 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4528938B2 (ja) * | 2004-12-24 | 2010-08-25 | 独立行政法人物質・材料研究機構 | マンガンがドープされた窒化ガリウムナノワイヤーの製造方法 |
| JP4970997B2 (ja) * | 2006-03-30 | 2012-07-11 | パナソニック株式会社 | ナノワイヤトランジスタの製造方法 |
| JP4856666B2 (ja) * | 2008-03-26 | 2012-01-18 | 独立行政法人科学技術振興機構 | 発光ダイオード素子及びその製造方法 |
| KR101494671B1 (ko) * | 2008-10-27 | 2015-02-24 | 삼성전자주식회사 | 압전 물질의 나노 튜브 제조 방법 및 압전 물질의 나노 튜브 |
| KR101819035B1 (ko) * | 2009-02-16 | 2018-01-18 | 삼성전자주식회사 | 14족 금속나노튜브를 포함하는 음극, 이를 채용한 리튬전지 및 이의 제조 방법 |
| US8940438B2 (en) | 2009-02-16 | 2015-01-27 | Samsung Electronics Co., Ltd. | Negative electrode including group 14 metal/metalloid nanotubes, lithium battery including the negative electrode, and method of manufacturing the negative electrode |
| KR101106543B1 (ko) * | 2009-10-13 | 2012-01-20 | 한국표준과학연구원 | 그라핀 마이크로 튜브의 제조방법 |
| US20120094192A1 (en) * | 2010-10-14 | 2012-04-19 | Ut-Battelle, Llc | Composite nanowire compositions and methods of synthesis |
| JP5929115B2 (ja) * | 2011-11-17 | 2016-06-01 | 富士通株式会社 | 半導体ナノデバイス |
| KR101922127B1 (ko) * | 2012-03-13 | 2018-11-26 | 삼성전자주식회사 | 향상된 감도를 갖는 나노포어 소자 및 그 제조 방법 |
| KR101463976B1 (ko) * | 2012-03-19 | 2014-11-27 | 최대규 | 소재 및 그 제조방법 |
| CN102820213A (zh) * | 2012-09-05 | 2012-12-12 | 中国科学院半导体研究所 | 利用InN纳米棒作为形核层生长单晶GaN纳米管的方法 |
| KR101449643B1 (ko) * | 2013-03-18 | 2014-10-13 | 공주대학교 산학협력단 | 금속산화물 나노튜브의 제조방법 |
| JP6665490B2 (ja) * | 2015-11-04 | 2020-03-13 | 日立化成株式会社 | 電磁波調整用分散体及び電磁波調整素子 |
| KR102440690B1 (ko) | 2017-11-03 | 2022-09-05 | 현대자동차주식회사 | 금속 공기 전지용 공기극의 제조방법, 이를 포함하는 금속 공기 전지의 제조 방법, 및 금속 공기 전지 |
| EP4047359A1 (fr) * | 2021-02-22 | 2022-08-24 | Meilleur Temps | Électrode pour un capteur électrochimique |
| CN113964003A (zh) * | 2021-10-09 | 2022-01-21 | 电子科技大学长三角研究院(湖州) | 一种具有纳米管结构的GaN光电阴极及其制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5352512A (en) * | 1989-03-15 | 1994-10-04 | The United States Of America As Represented By The Secretary Of The Air Force | Microscopic tube material and its method of manufacture |
| US6194066B1 (en) * | 1991-04-24 | 2001-02-27 | The United States Of America As Represented By The Secretary Of The Air Force | Microscopic tube devices and method of manufacture |
| CA2442985C (fr) * | 2001-03-30 | 2016-05-31 | The Regents Of The University Of California | Procede de realisation de nanostructures et de nanocables, et dispositifs etablis a partir de ce type d'equipement |
| US7211143B2 (en) * | 2002-12-09 | 2007-05-01 | The Regents Of The University Of California | Sacrificial template method of fabricating a nanotube |
-
2003
- 2003-12-08 EP EP03816316A patent/EP1583858A4/fr not_active Withdrawn
- 2003-12-08 WO PCT/US2003/039200 patent/WO2004111319A2/fr active Application Filing
- 2003-12-08 KR KR1020057010360A patent/KR20050085437A/ko not_active Application Discontinuation
- 2003-12-08 AU AU2003304214A patent/AU2003304214A1/en not_active Abandoned
- 2003-12-08 JP JP2005517137A patent/JP2006512218A/ja not_active Withdrawn
- 2003-12-08 CA CA002509257A patent/CA2509257A1/fr not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109544555A (zh) * | 2018-11-26 | 2019-03-29 | 陕西师范大学 | 基于生成式对抗网络的细小裂缝分割方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2004111319A3 (fr) | 2005-07-07 |
| AU2003304214A1 (en) | 2005-01-04 |
| EP1583858A2 (fr) | 2005-10-12 |
| WO2004111319A2 (fr) | 2004-12-23 |
| JP2006512218A (ja) | 2006-04-13 |
| KR20050085437A (ko) | 2005-08-29 |
| EP1583858A4 (fr) | 2008-03-12 |
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