CA2493503C - Dispositifs photoniques en nitrure du groupe iii montes sur des substrats au carbure de silicium presentant une structure inter-couche de tampon conducteur - Google Patents
Dispositifs photoniques en nitrure du groupe iii montes sur des substrats au carbure de silicium presentant une structure inter-couche de tampon conducteur Download PDFInfo
- Publication number
- CA2493503C CA2493503C CA002493503A CA2493503A CA2493503C CA 2493503 C CA2493503 C CA 2493503C CA 002493503 A CA002493503 A CA 002493503A CA 2493503 A CA2493503 A CA 2493503A CA 2493503 C CA2493503 C CA 2493503C
- Authority
- CA
- Canada
- Prior art keywords
- silicon carbide
- gallium nitride
- carbide substrate
- group iii
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 74
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 73
- 239000000872 buffer Substances 0.000 title claims abstract description 72
- 239000000758 substrate Substances 0.000 title claims abstract description 72
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 32
- 239000011229 interlayer Substances 0.000 title description 2
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 80
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 64
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 230000005693 optoelectronics Effects 0.000 claims abstract description 22
- 229910052738 indium Inorganic materials 0.000 claims abstract description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 19
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 17
- 239000002243 precursor Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005336 cracking Methods 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 72
- 239000000463 material Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 11
- 230000008901 benefit Effects 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/944,547 US6201262B1 (en) | 1997-10-07 | 1997-10-07 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure |
| US08/944,547 | 1997-10-07 | ||
| CA002305203A CA2305203C (fr) | 1997-10-07 | 1998-10-06 | Dispositifs photoniques en nitrure du groupe iii montes sur des substrats au carbure de silicium presentant une structure inter-couche de tampon conducteur |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002305203A Division CA2305203C (fr) | 1997-10-07 | 1998-10-06 | Dispositifs photoniques en nitrure du groupe iii montes sur des substrats au carbure de silicium presentant une structure inter-couche de tampon conducteur |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2493503A1 CA2493503A1 (fr) | 1999-04-15 |
| CA2493503C true CA2493503C (fr) | 2005-11-29 |
Family
ID=34378556
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002493503A Expired - Fee Related CA2493503C (fr) | 1997-10-07 | 1998-10-06 | Dispositifs photoniques en nitrure du groupe iii montes sur des substrats au carbure de silicium presentant une structure inter-couche de tampon conducteur |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2493503C (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8946674B2 (en) | 2005-08-31 | 2015-02-03 | University Of Florida Research Foundation, Inc. | Group III-nitrides on Si substrates using a nanostructured interlayer |
| US8222057B2 (en) | 2006-08-29 | 2012-07-17 | University Of Florida Research Foundation, Inc. | Crack free multilayered devices, methods of manufacture thereof and articles comprising the same |
-
1998
- 1998-10-06 CA CA002493503A patent/CA2493503C/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2493503A1 (fr) | 1999-04-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |
Effective date: 20131009 |