CA2487486A1 - Dielectrique intercouches en fluoropolymeres forme au moyen d'un procede de depot chimique en phase vapeur - Google Patents

Dielectrique intercouches en fluoropolymeres forme au moyen d'un procede de depot chimique en phase vapeur Download PDF

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Publication number
CA2487486A1
CA2487486A1 CA002487486A CA2487486A CA2487486A1 CA 2487486 A1 CA2487486 A1 CA 2487486A1 CA 002487486 A CA002487486 A CA 002487486A CA 2487486 A CA2487486 A CA 2487486A CA 2487486 A1 CA2487486 A1 CA 2487486A1
Authority
CA
Canada
Prior art keywords
fluoromonomer
thin film
film device
gas phase
polymerization initiator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002487486A
Other languages
English (en)
Inventor
Michael Mocella
Andrew E. Feiring
Theodore A. Treat
Eugene Lopata
Peter Rose
Yakov Brichko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2487486A1 publication Critical patent/CA2487486A1/fr
Abandoned legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/08—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface
    • B05D5/083—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain an anti-friction or anti-adhesive surface involving the use of fluoropolymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/14—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to metal, e.g. car bodies

Abstract

L'invention concerne un procédé de formation d'une couche de fluoropolymères sur un composant à couches minces. Ce procédé comprend les étapes consistant à : mettre ce composant à couches minces en contact avec un fluoromonomère en phase gazeuse ; et à induire la polymérisation de ce fluoromonomère au moyen d'un initiateur de polymérisation radicalaire, la polymérisation dudit fluoromonomère entraînant la formation d'une couche de fluoropolymères sur le composant à couches minces.
CA002487486A 2002-06-21 2002-06-21 Dielectrique intercouches en fluoropolymeres forme au moyen d'un procede de depot chimique en phase vapeur Abandoned CA2487486A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2002/019702 WO2004001832A1 (fr) 2002-06-21 2002-06-21 Dielectrique intercouches en fluoropolymeres forme au moyen d'un procede de depot chimique en phase vapeur

Publications (1)

Publication Number Publication Date
CA2487486A1 true CA2487486A1 (fr) 2003-12-31

Family

ID=29998721

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002487486A Abandoned CA2487486A1 (fr) 2002-06-21 2002-06-21 Dielectrique intercouches en fluoropolymeres forme au moyen d'un procede de depot chimique en phase vapeur

Country Status (7)

Country Link
EP (1) EP1516360A1 (fr)
CN (1) CN100336184C (fr)
AU (1) AU2002310491A1 (fr)
CA (1) CA2487486A1 (fr)
HK (1) HK1076921A1 (fr)
RU (1) RU2304323C2 (fr)
WO (1) WO2004001832A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013102011A2 (fr) * 2011-12-30 2013-07-04 Gvd Corporation Revêtements pour dispositifs électrofluidiques et d'électromouillage
WO2014127304A1 (fr) 2013-02-15 2014-08-21 Massachusetts Institute Of Technology Surfaces polymères greffées pour condensation goutte à goutte, et procédés associés d'utilisation et de fabrication

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3400688A1 (de) * 1984-01-11 1985-07-18 Chemische Werke Hüls AG, 4370 Marl Ausschleusung von schwermetallasche durch zentrifugalbehandlung oder druckfiltration
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
CA2072384A1 (fr) * 1991-08-29 1993-03-01 Clifford L. Spiro Compositions a base de fluorure de carbone
TW359943B (en) * 1994-07-18 1999-06-01 Silicon Valley Group Thermal Single body injector and method for delivering gases to a surface
US6022414A (en) * 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
JPH10209148A (ja) * 1997-01-27 1998-08-07 Sony Corp 低誘電率絶縁体膜の形成方法およびこれを用いた半導体装置
WO2000019507A1 (fr) * 1998-09-28 2000-04-06 Tokyo Electron Limited Depot de film assiste par plasma
US6458718B1 (en) * 2000-04-28 2002-10-01 Asm Japan K.K. Fluorine-containing materials and processes

Also Published As

Publication number Publication date
WO2004001832A1 (fr) 2003-12-31
CN100336184C (zh) 2007-09-05
EP1516360A1 (fr) 2005-03-23
CN1628376A (zh) 2005-06-15
RU2005101341A (ru) 2005-06-27
RU2304323C2 (ru) 2007-08-10
HK1076921A1 (en) 2006-01-27
AU2002310491A1 (en) 2004-01-06

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