CA2440694A1 - Quasi-cw diode-pumped, solid-state uv laser system and method employing same - Google Patents

Quasi-cw diode-pumped, solid-state uv laser system and method employing same Download PDF

Info

Publication number
CA2440694A1
CA2440694A1 CA002440694A CA2440694A CA2440694A1 CA 2440694 A1 CA2440694 A1 CA 2440694A1 CA 002440694 A CA002440694 A CA 002440694A CA 2440694 A CA2440694 A CA 2440694A CA 2440694 A1 CA2440694 A1 CA 2440694A1
Authority
CA
Canada
Prior art keywords
laser
current
time interval
target area
time intervals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002440694A
Other languages
English (en)
French (fr)
Inventor
Yunlong Sun
Richard S. Harris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electro Scientific Industries Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2440694A1 publication Critical patent/CA2440694A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Lasers (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Laser Beam Processing (AREA)
CA002440694A 2001-03-12 2002-03-12 Quasi-cw diode-pumped, solid-state uv laser system and method employing same Abandoned CA2440694A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US27524601P 2001-03-12 2001-03-12
US60/275,246 2001-03-12
PCT/US2002/007486 WO2002073322A1 (en) 2001-03-12 2002-03-12 Quasi-cw diode-pumped, solid-state uv laser system and method employing same

Publications (1)

Publication Number Publication Date
CA2440694A1 true CA2440694A1 (en) 2002-09-19

Family

ID=23051465

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002440694A Abandoned CA2440694A1 (en) 2001-03-12 2002-03-12 Quasi-cw diode-pumped, solid-state uv laser system and method employing same

Country Status (8)

Country Link
JP (1) JP4583711B2 (OSRAM)
KR (1) KR100853254B1 (OSRAM)
CN (1) CN100351719C (OSRAM)
CA (1) CA2440694A1 (OSRAM)
DE (1) DE10296512T5 (OSRAM)
GB (1) GB2390994B (OSRAM)
TW (1) TW523435B (OSRAM)
WO (1) WO2002073322A1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100985018B1 (ko) * 2010-04-06 2010-10-04 주식회사 엘앤피아너스 기판 가공 장치
PT2789061T (pt) * 2013-02-27 2017-02-22 Wavelight Gmbh Aparelho laser e método para processamento a laser de um material de destino
KR102176313B1 (ko) * 2013-02-28 2020-11-09 아이피지 포토닉스 코포레이션 사파이어를 처리하기 위한 레이저 시스템 및 방법
CN111478173B (zh) * 2020-05-19 2021-03-05 中国科学院福建物质结构研究所 一种1.5微米被动调q激光器

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2547519B1 (fr) * 1983-06-15 1987-07-03 Snecma Procede et dispositif de percage par laser
US5477043A (en) 1989-10-30 1995-12-19 Symbol Technologies, Inc. Scanning arrangement for the implementation of scanning patterns over indicia by driving the scanning elements in different component directions
DE59006631D1 (de) * 1990-06-05 1994-09-01 Audemars S A R Verfahren und Vorrichtung zum Schneiden von Material.
JPH0529693A (ja) * 1990-09-19 1993-02-05 Hitachi Ltd マルチパルスレーザ発生装置、及びその方法、並びにそのマルチパルスレーザを用いた加工方法
US5293025A (en) * 1991-08-01 1994-03-08 E. I. Du Pont De Nemours And Company Method for forming vias in multilayer circuits
JP3315556B2 (ja) * 1994-04-27 2002-08-19 三菱電機株式会社 レーザ加工装置
US5841099A (en) * 1994-07-18 1998-11-24 Electro Scientific Industries, Inc. Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets
US5593606A (en) 1994-07-18 1997-01-14 Electro Scientific Industries, Inc. Ultraviolet laser system and method for forming vias in multi-layered targets
US5751585A (en) 1995-03-20 1998-05-12 Electro Scientific Industries, Inc. High speed, high accuracy multi-stage tool positioning system
JPH09163984A (ja) * 1995-10-12 1997-06-24 Sony Corp 遺伝子組替え用レーザ装置およびこれを用いた遺伝子組替え方法
US5822211A (en) * 1996-11-13 1998-10-13 International Business Machines Corporation Laser texturing apparatus with dual laser paths having an independently adjusted parameter
US5943351A (en) * 1997-05-16 1999-08-24 Excel/Quantronix, Inc. Intra-cavity and inter-cavity harmonics generation in high-power lasers
EP0984844B1 (en) * 1997-05-27 2002-11-13 SDL, Inc. Laser marking system and method of energy control
US6188704B1 (en) * 1998-01-26 2001-02-13 Rocky Mountain Instrument Co. Diode-pumped laser drive
JPH11267867A (ja) * 1998-03-23 1999-10-05 Seiko Epson Corp レーザ加工方法及び装置
US6197133B1 (en) * 1999-02-16 2001-03-06 General Electric Company Short-pulse high-peak laser shock peening
JP2000301372A (ja) * 1999-04-23 2000-10-31 Seiko Epson Corp 透明材料のレーザ加工方法
US6252195B1 (en) * 1999-04-26 2001-06-26 Ethicon, Inc. Method of forming blind holes in surgical needles using a diode pumped Nd-YAG laser

Also Published As

Publication number Publication date
KR20030087017A (ko) 2003-11-12
WO2002073322A1 (en) 2002-09-19
WO2002073322B1 (en) 2003-02-20
JP4583711B2 (ja) 2010-11-17
KR100853254B1 (ko) 2008-08-21
TW523435B (en) 2003-03-11
JP2004528984A (ja) 2004-09-24
DE10296512T5 (de) 2004-04-29
GB2390994B (en) 2004-10-13
CN1714318A (zh) 2005-12-28
GB2390994A (en) 2004-01-28
GB0323441D0 (en) 2003-11-05
CN100351719C (zh) 2007-11-28

Similar Documents

Publication Publication Date Title
US6806440B2 (en) Quasi-CW diode pumped, solid-state UV laser system and method employing same
EP0900132B1 (en) Method employing uv laser pulses of varied energy density to form blind vias in multilayered targets
TW528636B (en) Micromachining with high-energy, intra-cavity Q-switched CO2 laser pulses
TWI386270B (zh) 提供有關於被微加工於工件中的特徵形狀的資訊之方法
US5973290A (en) Laser apparatus having improved via processing rate
US8415586B2 (en) Method for increasing throughput of solder mask removal by minimizing the number of cleaning pulses
US5593606A (en) Ultraviolet laser system and method for forming vias in multi-layered targets
JP4331752B2 (ja) 制御aom負荷を用いたレーザパルスピッキング
TWI647045B (zh) 使用一系列雷射脈衝用於鑽孔之方法與裝置
US6781090B2 (en) Quasi-CW diode-pumped, solid-state harmonic laser system and method employing same
JP2005199323A (ja) レーザ加工方法およびレーザ加工装置
US6833528B2 (en) Method and apparatus for laser processing
CN100351719C (zh) 准连续波二极管泵浦固体紫外激光系统及其使用方法
JP2004528984A5 (OSRAM)
JP2022140405A (ja) プリント基板のレーザ加工方法およびプリント基板のレーザ加工機
CA2246329A1 (en) Method employing uv laser pulses of varied energy density to form blind vias in multilayered targets

Legal Events

Date Code Title Description
FZDE Discontinued
FZDE Discontinued

Effective date: 20080312