CA2436759C - Methode de modification de l'impedance de dispositifs a semiconducteurs a l'aide d'une source chauffante focalisee - Google Patents

Methode de modification de l'impedance de dispositifs a semiconducteurs a l'aide d'une source chauffante focalisee Download PDF

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Publication number
CA2436759C
CA2436759C CA2436759A CA2436759A CA2436759C CA 2436759 C CA2436759 C CA 2436759C CA 2436759 A CA2436759 A CA 2436759A CA 2436759 A CA2436759 A CA 2436759A CA 2436759 C CA2436759 C CA 2436759C
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CA
Canada
Prior art keywords
region
bridging
conductive
area
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA2436759A
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English (en)
Other versions
CA2436759A1 (fr
Inventor
Alain Lacourse
Hugues Langlois
Yvon Savaria
Yves Gagnon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cadeka Microcircuits LLC
Original Assignee
Cadeka Microcircuits LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA002398166A external-priority patent/CA2398166A1/fr
Application filed by Cadeka Microcircuits LLC filed Critical Cadeka Microcircuits LLC
Priority to CA2436759A priority Critical patent/CA2436759C/fr
Publication of CA2436759A1 publication Critical patent/CA2436759A1/fr
Application granted granted Critical
Publication of CA2436759C publication Critical patent/CA2436759C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
CA2436759A 2002-08-14 2003-08-08 Methode de modification de l'impedance de dispositifs a semiconducteurs a l'aide d'une source chauffante focalisee Expired - Fee Related CA2436759C (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA2436759A CA2436759C (fr) 2002-08-14 2003-08-08 Methode de modification de l'impedance de dispositifs a semiconducteurs a l'aide d'une source chauffante focalisee

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CA2,398,166 2002-08-14
CA002398166A CA2398166A1 (fr) 2002-08-14 2002-08-14 Methode de modification de l'impedance de dispositifs a semiconducteurs a l'aide d'une source chauffante focalisee
US10/631,825 2003-08-01
US10/631,825 US6890802B2 (en) 2002-08-14 2003-08-01 Method for modifying the impedance of semiconductor devices using a focused heating source
CA2436759A CA2436759C (fr) 2002-08-14 2003-08-08 Methode de modification de l'impedance de dispositifs a semiconducteurs a l'aide d'une source chauffante focalisee

Publications (2)

Publication Number Publication Date
CA2436759A1 CA2436759A1 (fr) 2004-02-14
CA2436759C true CA2436759C (fr) 2013-12-03

Family

ID=31720876

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2436759A Expired - Fee Related CA2436759C (fr) 2002-08-14 2003-08-08 Methode de modification de l'impedance de dispositifs a semiconducteurs a l'aide d'une source chauffante focalisee

Country Status (1)

Country Link
CA (1) CA2436759C (fr)

Also Published As

Publication number Publication date
CA2436759A1 (fr) 2004-02-14

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