CA2409755A1 - Method and apparatus for end-point detection - Google Patents

Method and apparatus for end-point detection Download PDF

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Publication number
CA2409755A1
CA2409755A1 CA002409755A CA2409755A CA2409755A1 CA 2409755 A1 CA2409755 A1 CA 2409755A1 CA 002409755 A CA002409755 A CA 002409755A CA 2409755 A CA2409755 A CA 2409755A CA 2409755 A1 CA2409755 A1 CA 2409755A1
Authority
CA
Canada
Prior art keywords
wafer
electropolishing
present
metal layer
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002409755A
Other languages
English (en)
French (fr)
Inventor
Hui Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACM Research Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2409755A1 publication Critical patent/CA2409755A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/16—Polishing
    • C25F3/22—Polishing of heavy metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
CA002409755A 2000-05-12 2001-05-03 Method and apparatus for end-point detection Abandoned CA2409755A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/570,566 US6447668B1 (en) 1998-07-09 2000-05-12 Methods and apparatus for end-point detection
US09/570,566 2000-05-12
PCT/US2001/014652 WO2001088229A1 (en) 2000-05-12 2001-05-03 Method and apparatus for end-point detection

Publications (1)

Publication Number Publication Date
CA2409755A1 true CA2409755A1 (en) 2001-11-22

Family

ID=24280146

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002409755A Abandoned CA2409755A1 (en) 2000-05-12 2001-05-03 Method and apparatus for end-point detection

Country Status (6)

Country Link
US (1) US6447668B1 (US06447668-20020910-M00008.png)
EP (1) EP1290249A4 (US06447668-20020910-M00008.png)
AU (1) AU2001259566A1 (US06447668-20020910-M00008.png)
CA (1) CA2409755A1 (US06447668-20020910-M00008.png)
TW (1) TW494049B (US06447668-20020910-M00008.png)
WO (1) WO2001088229A1 (US06447668-20020910-M00008.png)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395152B1 (en) * 1998-07-09 2002-05-28 Acm Research, Inc. Methods and apparatus for electropolishing metal interconnections on semiconductor devices
US7136173B2 (en) * 1998-07-09 2006-11-14 Acm Research, Inc. Method and apparatus for end-point detection
US7531079B1 (en) 1998-10-26 2009-05-12 Novellus Systems, Inc. Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation
US20040065540A1 (en) * 2002-06-28 2004-04-08 Novellus Systems, Inc. Liquid treatment using thin liquid layer
US6709565B2 (en) * 1998-10-26 2004-03-23 Novellus Systems, Inc. Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation
US7449098B1 (en) 1999-10-05 2008-11-11 Novellus Systems, Inc. Method for planar electroplating
US6653226B1 (en) 2001-01-09 2003-11-25 Novellus Systems, Inc. Method for electrochemical planarization of metal surfaces
US6756307B1 (en) * 1999-10-05 2004-06-29 Novellus Systems, Inc. Apparatus for electrically planarizing semiconductor wafers
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US7678245B2 (en) 2000-02-17 2010-03-16 Applied Materials, Inc. Method and apparatus for electrochemical mechanical processing
US6537144B1 (en) 2000-02-17 2003-03-25 Applied Materials, Inc. Method and apparatus for enhanced CMP using metals having reductive properties
US6962524B2 (en) 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6991526B2 (en) * 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7670468B2 (en) 2000-02-17 2010-03-02 Applied Materials, Inc. Contact assembly and method for electrochemical mechanical processing
US6428673B1 (en) * 2000-07-08 2002-08-06 Semitool, Inc. Apparatus and method for electrochemical processing of a microelectronic workpiece, capable of modifying processing based on metrology
US6747734B1 (en) * 2000-07-08 2004-06-08 Semitool, Inc. Apparatus and method for processing a microelectronic workpiece using metrology
JP2002093761A (ja) * 2000-09-19 2002-03-29 Sony Corp 研磨方法、研磨装置、メッキ方法およびメッキ装置
US6591160B2 (en) * 2000-12-04 2003-07-08 Asyst Technologies, Inc. Self teaching robot
US7160432B2 (en) * 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
TW584899B (en) * 2001-07-20 2004-04-21 Nutool Inc Planar metal electroprocessing
US6881664B2 (en) * 2001-08-28 2005-04-19 Lsi Logic Corporation Process for planarizing upper surface of damascene wiring structure for integrated circuit structures
US6720263B2 (en) * 2001-10-16 2004-04-13 Applied Materials Inc. Planarization of metal layers on a semiconductor wafer through non-contact de-plating and control with endpoint detection
US20030072639A1 (en) * 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
JP2005509746A (ja) * 2001-11-13 2005-04-14 エーシーエム リサーチ，インコーポレイティド 導電性層を電解研磨するための電解研磨アセンブリ及び電解研磨方法
US6770565B2 (en) 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
US6621099B2 (en) * 2002-01-11 2003-09-16 Xerox Corporation Polythiophenes and devices thereof
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
AU2003230847A1 (en) 2002-04-09 2003-10-27 Rensselaer Polytechnic Institute Electrochemical planarization of metal feature surfaces
US7022216B2 (en) * 2002-06-12 2006-04-04 Faraday Technology Marketing Group, Llc Electrolytic etching of metal layers
AU2003256673A1 (en) * 2002-07-22 2004-02-09 Acm Research, Inc. Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers
US7799200B1 (en) 2002-07-29 2010-09-21 Novellus Systems, Inc. Selective electrochemical accelerator removal
US6783657B2 (en) * 2002-08-29 2004-08-31 Micron Technology, Inc. Systems and methods for the electrolytic removal of metals from substrates
US20040040863A1 (en) * 2002-08-29 2004-03-04 Micron Technology, Inc. Systems for electrolytic removal of metals from substrates
US7112270B2 (en) * 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US20050061674A1 (en) * 2002-09-16 2005-03-24 Yan Wang Endpoint compensation in electroprocessing
US7842169B2 (en) 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
US6939796B2 (en) 2003-03-14 2005-09-06 Lam Research Corporation System, method and apparatus for improved global dual-damascene planarization
US6821899B2 (en) 2003-03-14 2004-11-23 Lam Research Corporation System, method and apparatus for improved local dual-damascene planarization
US6930782B1 (en) 2003-03-28 2005-08-16 Lam Research Corporation End point detection with imaging matching in semiconductor processing
US20040235297A1 (en) * 2003-05-23 2004-11-25 Bih-Tiao Lin Reverse electroplating for damascene conductive region formation
US8530359B2 (en) 2003-10-20 2013-09-10 Novellus Systems, Inc. Modulated metal removal using localized wet etching
US8158532B2 (en) * 2003-10-20 2012-04-17 Novellus Systems, Inc. Topography reduction and control by selective accelerator removal
WO2005055283A2 (en) * 2003-11-26 2005-06-16 Acm Research, Inc. Monitoring an electropolishing process in integrated circuit fabrication
US7186164B2 (en) * 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US20070131561A1 (en) * 2003-12-17 2007-06-14 Acm Research, Inc. Controlling removal rate uniformity of an electropolishing process in integrated circuit fabrication
US20050145506A1 (en) * 2003-12-29 2005-07-07 Taylor E. J. Electrochemical etching of circuitry for high density interconnect electronic modules
US20060207888A1 (en) * 2003-12-29 2006-09-21 Taylor E J Electrochemical etching of circuitry for high density interconnect electronic modules
TWI354316B (en) * 2004-02-23 2011-12-11 Acm Res Inc Controlling removal rate uniformity of an electrop
US20050218009A1 (en) * 2004-04-02 2005-10-06 Jinshan Huo Electrochemical planarization system and method of electrochemical planarization
US20050247673A1 (en) * 2004-05-07 2005-11-10 International Business Machines Corporation Confinement of fluids on surfaces
US7655565B2 (en) * 2005-01-26 2010-02-02 Applied Materials, Inc. Electroprocessing profile control
US20110094895A1 (en) * 2005-05-20 2011-04-28 Stephen Mazur Optical detection of planarization, breakthrough and end-point in membrane-mediated electropolishing of metal layers
US20070181441A1 (en) * 2005-10-14 2007-08-09 Applied Materials, Inc. Method and apparatus for electropolishing
US7938927B2 (en) * 2006-03-01 2011-05-10 Camfil Ab Method of making a filter assembly
US7422982B2 (en) * 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
US8168540B1 (en) 2009-12-29 2012-05-01 Novellus Systems, Inc. Methods and apparatus for depositing copper on tungsten
JP6128941B2 (ja) * 2013-05-10 2017-05-17 ルネサスエレクトロニクス株式会社 半導体装置の製造方法及び半導体製造装置
CN104894634A (zh) * 2014-03-03 2015-09-09 盛美半导体设备（上海）有限公司 新型电化学抛光装置
CN111632779B (zh) * 2020-05-21 2023-03-24 国网宁夏电力有限公司检修公司 一种用于高压隔离开关的导电液喷涂装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2751344A (en) 1949-06-21 1956-06-19 Charles A Kienberger Electropolisher
US4078980A (en) 1976-10-01 1978-03-14 National Semiconductor Corporation Electrolytic chromium etching of chromium-layered semiconductor
US4304641A (en) 1980-11-24 1981-12-08 International Business Machines Corporation Rotary electroplating cell with controlled current distribution
GB8617675D0 (en) 1986-07-19 1986-08-28 Ae Plc Deposition of bearing alloys
WO1990000476A1 (en) 1988-07-12 1990-01-25 The Regents Of The University Of California Planarized interconnect etchback
US5096550A (en) * 1990-10-15 1992-03-17 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for spatially uniform electropolishing and electrolytic etching
US5217586A (en) * 1992-01-09 1993-06-08 International Business Machines Corporation Electrochemical tool for uniform metal removal during electropolishing
JPH0625899A (ja) 1992-07-10 1994-02-01 Nec Corp 電解メッキ装置
US5489341A (en) 1993-08-23 1996-02-06 Semitool, Inc. Semiconductor processing with non-jetting fluid stream discharge array
US5421987A (en) 1993-08-30 1995-06-06 Tzanavaras; George Precision high rate electroplating cell and method
WO1995020064A1 (en) 1994-01-24 1995-07-27 Berg N Edward Uniform electroplating of printed circuit boards
US5544421A (en) 1994-04-28 1996-08-13 Semitool, Inc. Semiconductor wafer processing system
US5567300A (en) 1994-09-02 1996-10-22 Ibm Corporation Electrochemical metal removal technique for planarization of surfaces
US5516412A (en) 1995-05-16 1996-05-14 International Business Machines Corporation Vertical paddle plating cell
US5670034A (en) 1995-07-11 1997-09-23 American Plating Systems Reciprocating anode electrolytic plating apparatus and method
US5620581A (en) 1995-11-29 1997-04-15 Aiwa Research And Development, Inc. Apparatus for electroplating metal films including a cathode ring, insulator ring and thief ring
US5865984A (en) * 1997-06-30 1999-02-02 International Business Machines Corporation Electrochemical etching apparatus and method for spirally etching a workpiece
US6017437A (en) 1997-08-22 2000-01-25 Cutek Research, Inc. Process chamber and method for depositing and/or removing material on a substrate

Also Published As

Publication number Publication date
AU2001259566A1 (en) 2001-11-26
TW494049B (en) 2002-07-11
US6447668B1 (en) 2002-09-10
WO2001088229A1 (en) 2001-11-22
EP1290249A4 (en) 2006-09-13
EP1290249A1 (en) 2003-03-12

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued