CA2286125A1 - Memoire permanente effacable electriquement - Google Patents

Memoire permanente effacable electriquement Download PDF

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Publication number
CA2286125A1
CA2286125A1 CA002286125A CA2286125A CA2286125A1 CA 2286125 A1 CA2286125 A1 CA 2286125A1 CA 002286125 A CA002286125 A CA 002286125A CA 2286125 A CA2286125 A CA 2286125A CA 2286125 A1 CA2286125 A1 CA 2286125A1
Authority
CA
Canada
Prior art keywords
well
bias
biasing
doped region
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002286125A
Other languages
English (en)
Inventor
Ting-Wah Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Programmable Silicon Solutions
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2286125A1 publication Critical patent/CA2286125A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits

Abstract

On décrit une cellule de mémoire permanente à géométrie très variable, qui comprend une cellule formée dans un puits triple. La grille de contrôle est polarisée négativement. En polarisant le puits de type p et le drain (ou la source) positivement, dans les limites d'une plage de tension particulière pendant l'effaçage, on peut réduire le courant de fuite dans le drain induit par la grille (GIDL) et la dégradation dus à la capture par trous, ce qui permet de réaliser une technologie à géométrie très variable.
CA002286125A 1997-04-11 1998-04-07 Memoire permanente effacable electriquement Abandoned CA2286125A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US83885697A 1997-04-04 1997-04-04
US08/838,856 1997-04-11
PCT/US1998/007082 WO1998047151A1 (fr) 1997-04-11 1998-04-07 Memoire permanente effaçable electriquement

Publications (1)

Publication Number Publication Date
CA2286125A1 true CA2286125A1 (fr) 1998-10-22

Family

ID=25278228

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002286125A Abandoned CA2286125A1 (fr) 1997-04-11 1998-04-07 Memoire permanente effacable electriquement

Country Status (7)

Country Link
EP (1) EP0974147A1 (fr)
JP (1) JPH10335504A (fr)
KR (1) KR20010006135A (fr)
CN (1) CN1252156A (fr)
CA (1) CA2286125A1 (fr)
TW (1) TW389998B (fr)
WO (1) WO1998047151A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999031669A1 (fr) * 1997-12-18 1999-06-24 Advanced Micro Devices, Inc. Procede et structure de polarisation propres a reduire les courants bande-a-bande et/ou les courants d'avalanche d'effacement des memoires flash
US6188609B1 (en) 1999-05-06 2001-02-13 Advanced Micro Devices, Inc. Ramped or stepped gate channel erase for flash memory application
KR100454117B1 (ko) * 2001-10-22 2004-10-26 삼성전자주식회사 소노스 게이트 구조를 갖는 낸드형 비휘발성 메모리소자의구동방법
US6876582B2 (en) * 2002-05-24 2005-04-05 Hynix Semiconductor, Inc. Flash memory cell erase scheme using both source and channel regions
US7289362B2 (en) * 2002-07-08 2007-10-30 Nxp B.V. Erasable and programmable non-volatile cell
CN100334715C (zh) * 2003-01-14 2007-08-29 力旺电子股份有限公司 非易失性存储元件
WO2006070473A1 (fr) * 2004-12-28 2006-07-06 Spansion Llc Dispositif a semi-conducteurs et procede de commande de fonctionnement
KR101043383B1 (ko) * 2009-12-23 2011-06-21 주식회사 하이닉스반도체 반도체 메모리 장치
CN102446719B (zh) * 2011-09-08 2014-05-28 上海华力微电子有限公司 提高浮体动态随机存储单元写入速度的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5235544A (en) * 1990-11-09 1993-08-10 John Caywood Flash EPROM cell and method for operating same
US5457652A (en) * 1994-04-01 1995-10-10 National Semiconductor Corporation Low voltage EEPROM
JP3204602B2 (ja) * 1995-07-13 2001-09-04 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
TW389998B (en) 2000-05-11
WO1998047151A1 (fr) 1998-10-22
KR20010006135A (ko) 2001-01-26
CN1252156A (zh) 2000-05-03
JPH10335504A (ja) 1998-12-18
EP0974147A1 (fr) 2000-01-26

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued