CA2284826C - Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement - Google Patents
Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement Download PDFInfo
- Publication number
- CA2284826C CA2284826C CA002284826A CA2284826A CA2284826C CA 2284826 C CA2284826 C CA 2284826C CA 002284826 A CA002284826 A CA 002284826A CA 2284826 A CA2284826 A CA 2284826A CA 2284826 C CA2284826 C CA 2284826C
- Authority
- CA
- Canada
- Prior art keywords
- electrodeposition
- gallium
- indium
- copper
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004070 electrodeposition Methods 0.000 title claims abstract description 66
- 239000002243 precursor Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title description 3
- 239000010408 film Substances 0.000 claims abstract description 87
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 42
- 239000011669 selenium Substances 0.000 claims abstract description 41
- 239000010949 copper Substances 0.000 claims abstract description 37
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 35
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910052802 copper Inorganic materials 0.000 claims abstract description 27
- 229910052738 indium Inorganic materials 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 26
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 25
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000010409 thin film Substances 0.000 claims abstract description 19
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 13
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 claims description 10
- -1 gallium ions Chemical class 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 7
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 5
- 229910001449 indium ion Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001431 copper ion Inorganic materials 0.000 claims description 3
- 229940044658 gallium nitrate Drugs 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 4
- 239000011733 molybdenum Substances 0.000 abstract description 4
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000000203 mixture Substances 0.000 description 14
- 229910001868 water Inorganic materials 0.000 description 13
- 238000007740 vapor deposition Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 10
- 229910003597 H2SeO3 Inorganic materials 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 9
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 7
- 238000000224 chemical solution deposition Methods 0.000 description 6
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Inorganic materials [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 3
- 229910000058 selane Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910017612 Cu(In,Ga)Se2 Inorganic materials 0.000 description 2
- 239000007832 Na2SO4 Substances 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052938 sodium sulfate Inorganic materials 0.000 description 2
- 235000011152 sodium sulphate Nutrition 0.000 description 2
- 239000003115 supporting electrolyte Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 229910009112 xH2O Inorganic materials 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910013470 LiC1 Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000369 cadmium(II) sulfate Inorganic materials 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000003869 coulometry Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
On prépare une photopile (10) ayant un rendement de conversion global de 13,6 % à partir d'une couche (18) d'un précurseur constitué d'un diséléniure de cuivre-indium-gallium. Pour fabriquer ladite couche (18), on revêt un substrat constitué de verre/molybdène (12, 14) par électrodéposition simultanée de cuivre, d'indium, de gallium et de sélénium. La tension d'électrodéposition est une tension en courant alternatif haute fréquence superposée à une tension en courant continu, ce qui améliore la morphologie et la vitesse de croissance de la couche (18). L'électrodéposition est suivie d'un procédé physique de dépôt en phase gazeuse, ce qui permet de régler la stoechiométrie finale de la couche mince (18) sur approximativement Cu(In1-x,Gax)Se2, le rapport Ga/(In+Ga) étant de 0,39 environ.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4450697P | 1997-04-21 | 1997-04-21 | |
| US60/044,506 | 1997-04-21 | ||
| US08/870,081 | 1997-06-05 | ||
| US08/870,081 US5871630A (en) | 1995-12-12 | 1997-06-05 | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells |
| PCT/US1998/006212 WO1998048079A1 (fr) | 1997-04-21 | 1998-03-30 | Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2284826A1 CA2284826A1 (fr) | 1998-10-29 |
| CA2284826C true CA2284826C (fr) | 2007-06-05 |
Family
ID=26721647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002284826A Expired - Fee Related CA2284826C (fr) | 1997-04-21 | 1998-03-30 | Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0977911A4 (fr) |
| AU (1) | AU6786998A (fr) |
| CA (1) | CA2284826C (fr) |
| WO (1) | WO1998048079A1 (fr) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0127113D0 (en) * | 2001-11-10 | 2002-01-02 | Univ Sheffield | Copper indium based thin film photovoltaic devices and methods of making the same |
| JP2011503847A (ja) | 2007-11-02 | 2011-01-27 | ワコンダ テクノロジーズ， インコーポレイテッド | 結晶質薄膜光起電力構造およびその形成方法 |
| DE102008051520A1 (de) * | 2008-10-13 | 2010-04-22 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Erzeugung einer (001)-texturierten Kristallschicht aus einem photoaktiven Schichtgitter-Halbleiter auf einer metallisch leitfähigen Schicht unter Beteiligung eines Metallpromoters |
| CA2773709C (fr) * | 2009-09-08 | 2016-02-23 | The University Of Western Ontario | Procede electrochimique de production de piles solaires au diseleniure de cuivre-indium-gallium (cigs) |
| BR112012023397A2 (pt) * | 2010-03-17 | 2016-06-07 | Dow Global Technologies Llc | método para produzir uma composição fotoabsorvente contendo calcogeneto, dispositivo fotovoltaico e película de precursor de um material fotoabsorvente contendo calcogeneto |
| WO2013164248A1 (fr) * | 2012-05-02 | 2013-11-07 | Umicore | Précurseur de sélénite et encre pour la fabrication de cellules photovoltaïques cigs |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221660A (en) * | 1987-12-25 | 1993-06-22 | Sumitomo Electric Industries, Ltd. | Semiconductor substrate having a superconducting thin film |
| US5441897A (en) * | 1993-04-12 | 1995-08-15 | Midwest Research Institute | Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells |
| US5730852A (en) * | 1995-09-25 | 1998-03-24 | Davis, Joseph & Negley | Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells |
-
1998
- 1998-03-30 AU AU67869/98A patent/AU6786998A/en not_active Abandoned
- 1998-03-30 CA CA002284826A patent/CA2284826C/fr not_active Expired - Fee Related
- 1998-03-30 EP EP98913276A patent/EP0977911A4/fr not_active Ceased
- 1998-03-30 WO PCT/US1998/006212 patent/WO1998048079A1/fr not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CA2284826A1 (fr) | 1998-10-29 |
| EP0977911A1 (fr) | 2000-02-09 |
| AU6786998A (en) | 1998-11-13 |
| WO1998048079A1 (fr) | 1998-10-29 |
| EP0977911A4 (fr) | 2002-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5871630A (en) | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells | |
| US7297868B2 (en) | Preparation of CIGS-based solar cells using a buffered electrodeposition bath | |
| AU2006251092B2 (en) | Sulphurisation and selenisation of CIGS layers electrolytically deposited by thermal annealing | |
| Basol et al. | Deposition of CuInSe/sub 2/films by a two-stage process utilizing E-beam evaporation | |
| US20110108115A1 (en) | Forming a Photovoltaic Device | |
| Pawar et al. | Fabrication of Cu2ZnSnS4 thin film solar cell using single step electrodeposition method | |
| Sene et al. | Electrodeposition of CuInSe2 absorber layers from pH buffered and non-buffered sulfate-based solutions | |
| US20040131792A1 (en) | Electroless deposition of cu-in-ga-se film | |
| US8409418B2 (en) | Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers | |
| US9410259B2 (en) | Electrodeposition of gallium for photovoltaics | |
| US10032949B2 (en) | Photovoltaic device based on Ag2ZnSn(S,Se)4 absorber | |
| CA2284826C (fr) | Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement | |
| WO2011075561A1 (fr) | Chimies de plaquage d'absorbeurs pour cellules solaires en couche mince des groupes ib/iiia/via | |
| Lee et al. | Structural regulation of electrochemically deposited copper layers for fabrication of thin film solar cells with a CuInS2 photoabsorber | |
| JP6035122B2 (ja) | 光電変換素子および光電変換素子のバッファ層の製造方法 | |
| KR101582121B1 (ko) | 이종 적층형 cis계 광활성층 박막의 제조방법, 이로부터 제조된 cis계 광활성층 박막 및 상기 박막을 포함하는 박막 태양전지 | |
| Dale et al. | Applications of Electrochemistry in the Fabrication and Characterization of Thin‐Film Solar Cells | |
| MXPA99009621A (en) | Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells | |
| MXPA98004620A (en) | Preparation of precursory films of cuxinygazsen (x = 0-2, y = 0-2, z = o-2, n = 0-3) through electrodeposition to manufacture solar cells of efficiency to | |
| Bhattacharya et al. | CuIn1− XGaXSe2-Based Photovoltaic Cells From Electrodeposited Precursor Films | |
| Bhattacharya et al. | Culni. xGaySe₂-BASED PHOTOVOLTAIC CELLS FROM ELECTRODEPOSITED AND ELECTROLESS DEPOSITED PRECURSORS | |
| Nya et al. | Cd-FREE HETEROSTRUCTURES BASED ON CIS AND CIGS THIN FILMS FOR PHOTOVOLTAIC APPLICATIONS | |
| WO2002077322A1 (fr) | Depot autocatalytique d'un film en cu-in-ga-se | |
| Bhattacharya et al. | 13.6% EFFICIENT CuIn₁-xGaxSe-BASED DEVICE FROM ELECTRODEPOSITED PRECURSOR | |
| Pawar et al. | Research Article Effect of Annealing Atmosphere on the Properties of Electrochemically Deposited Cu2ZnSnS4 (CZTS) Thin Films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |