CA2141034A1 - Indium Antimonide (InSb) Photodetector Device and Structure for Infrared, Visible and Ultraviolet Radiation - Google Patents

Indium Antimonide (InSb) Photodetector Device and Structure for Infrared, Visible and Ultraviolet Radiation

Info

Publication number
CA2141034A1
CA2141034A1 CA2141034A CA2141034A CA2141034A1 CA 2141034 A1 CA2141034 A1 CA 2141034A1 CA 2141034 A CA2141034 A CA 2141034A CA 2141034 A CA2141034 A CA 2141034A CA 2141034 A1 CA2141034 A1 CA 2141034A1
Authority
CA
Canada
Prior art keywords
insb
infrared
visible
indium antimonide
photodetector device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2141034A
Other languages
French (fr)
Other versions
CA2141034C (en
Inventor
Ichiro Kasai
John R. Toman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Ichiro Kasai
John R. Toman
Santa Barbara Research Center
Raytheon Company
Hughes Aircraft Company
He Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ichiro Kasai, John R. Toman, Santa Barbara Research Center, Raytheon Company, Hughes Aircraft Company, He Holdings, Inc. filed Critical Ichiro Kasai
Publication of CA2141034A1 publication Critical patent/CA2141034A1/en
Application granted granted Critical
Publication of CA2141034C publication Critical patent/CA2141034C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all native oxides of indium and antimony therefrom. A passivation layer (26) is then formed on the surface (22) of a material such as silicon dioxide, silicon suboxide and/or silicon nitride which does not react With InSb to form a structure which would have carrier traps therein and cause flashing. The device (10) is capable of detecting radiation over a continuous spectral range including the infrared, visible and ultraviolet regions.
CA002141034A 1993-05-28 1994-05-27 Indium antimonide (insb) photodetector device and structure for infrared, visible and ultraviolet radiation Expired - Fee Related CA2141034C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6889793A 1993-05-28 1993-05-28
US068,897 1993-05-28
PCT/US1994/006038 WO1994028587A1 (en) 1993-05-28 1994-05-27 INDIUM ANTIMONIDE (InSb) PHOTODETECTOR DEVICE AND STRUCTURE FOR INFRARED, VISIBLE AND ULTRAVIOLET RADIATION

Publications (2)

Publication Number Publication Date
CA2141034A1 true CA2141034A1 (en) 1994-12-08
CA2141034C CA2141034C (en) 1999-07-27

Family

ID=22085408

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002141034A Expired - Fee Related CA2141034C (en) 1993-05-28 1994-05-27 Indium antimonide (insb) photodetector device and structure for infrared, visible and ultraviolet radiation

Country Status (4)

Country Link
EP (1) EP0653106A1 (en)
JP (1) JP2998994B2 (en)
CA (1) CA2141034C (en)
WO (1) WO1994028587A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2461914C1 (en) * 2011-06-14 2012-09-20 Открытое акционерное общество "Московский завод "САПФИР" Planar photodiode on indium antimonide

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4286277A (en) * 1977-11-22 1981-08-25 The United States Of America As Represented By The Secretary Of The Army Planar indium antimonide diode array and method of manufacture
JPS6237927A (en) * 1985-08-13 1987-02-18 Tech Res & Dev Inst Of Japan Def Agency Preparation for insb semiconductor device
DE3617229C2 (en) * 1986-05-22 1997-04-30 Aeg Infrarot Module Gmbh Radiation detector
CA2070708C (en) * 1991-08-08 1997-04-29 Ichiro Kasai Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface

Also Published As

Publication number Publication date
JPH08500940A (en) 1996-01-30
WO1994028587A1 (en) 1994-12-08
JP2998994B2 (en) 2000-01-17
CA2141034C (en) 1999-07-27
EP0653106A1 (en) 1995-05-17

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed