DE3617229C2 - Radiation detector - Google Patents
Radiation detectorInfo
- Publication number
- DE3617229C2 DE3617229C2 DE3617229A DE3617229A DE3617229C2 DE 3617229 C2 DE3617229 C2 DE 3617229C2 DE 3617229 A DE3617229 A DE 3617229A DE 3617229 A DE3617229 A DE 3617229A DE 3617229 C2 DE3617229 C2 DE 3617229C2
- Authority
- DE
- Germany
- Prior art keywords
- radiation
- layer
- detected
- detector according
- radiation detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 17
- 239000004065 semiconductor Substances 0.000 claims 2
- 239000011247 coating layer Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
- H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14654—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
Description
Die vorliegende Erfindung betrifft einen Strahlungsdetektor nach dem Oberbegriff des Patentanspruchs 1. Ein Festkörper-Bilderzeuger dieser Art ist z. B. aus der Zeitschrift "Photonics Spectra" (Sept. 1985), Seiten 103, 104, 106, 108, 110, 112 und 113 be kannt. The present invention relates to a radiation detector the preamble of claim 1. A solid-state image generator this type is e.g. B. from the magazine "Photonics Spectra" (Sept. 1985), pages 103, 104, 106, 108, 110, 112 and 113 be knows.
Der Abstand zwischen den einzelnen Detektorelementen ist sehr ge ring. Er ist im allgemeinen kleiner als die Diffusionslänge der Minoritätsträger in dem Substrat. Hierdurch entstehen Schwierig keiten nach Art eines optischen Übersprechens, wenn Minoritäts träger zu einem benachbarten Element gelangen.The distance between the individual detector elements is very ge ring. It is generally smaller than the diffusion length of the Minority carriers in the substrate. This creates difficulties in terms of optical crosstalk when minority to reach a neighboring element.
Der vorliegenden Erfindung liegt die Aufgabe zugrunde, optische und elektrische Übersprecherscheinungen bei Mehr-Element-Detektoren durch Anwendung einfacher Techniken zu vermeiden.The present invention has for its object optical and electrical crosstalk in multi-element detectors avoid using simple techniques.
Diese Aufgabe wird durch die im Patentanspruch 1 angegebenen Merkmale gelöst.This object is achieved by the in claim 1 specified features solved.
Durch Aufbringen der beschriebenen elektrisch mit dem Substrat verbundenen metallischen Abdeckschicht, die für die zu detektie rende Strahlung, d. h. für die IR-Strahlung undurchlässig ist, wird eine Abdeckmaske erzeugt, die für jedes einzelne Detektore lement ein optisches Fenster aufweist. Die Form der Öffnung be stimmt dabei die Form des optischen Fensters. Die anderen Berei che des Substrats, insbesondere die Spalten zwischen den einzel nen Elementen, werden gegen die IR-Strahlung abgedeckt, d. h. es wird verhindert, daß in den Bereichen des Substrats die nicht als Detektorelemente wirken sollen, Minoritätsträger entstehen, die ein unerwünschtes Übersprechen verursachen. Die beschriebene Po tentialgebung der Abdeckmaske vermeidet störende Potentialaufla dungen dieser Maske.By applying the described electrically to the substrate connected metallic cover layer, which is used for the detection emitting radiation, d. H. is impermeable to IR radiation, a mask is created for each individual detector element has an optical window. The shape of the opening the shape of the optical window is correct. The other areas surface of the substrate, especially the gaps between the individual NEN elements are covered against IR radiation, d. H. it It is prevented that in the areas of the substrate not as Detector elements should act, minority carriers arise that cause unwanted crosstalk. The described Po Potentialization of the mask avoids disturbing potential of this mask.
Anhand des in der Figur dargestellten bevorzugten Ausführungsbei spiels wird die Erfindung näher erläutert.Based on the preferred embodiment shown in the figure game, the invention is explained in more detail.
Die Figur zeigt schematisch den Querschnitt durch ein Detektore lement eines IR-Detektors. Das Substrat 2 besteht aus n-dotiertem InSb und der der Strahlung 10 zugewandte Oberflächenbereich 1 ist p-dotiert. Durch bekannte Ätzprozesse werden die einzelnen Detek torelemente separiert. Die gesamte Oberfläche des Substrats, also sowohl die n-dotierten als auch die p-dotierten Oberflächenberei che werden mit einer Isolierschicht 3 überzogen, die bevorzugt aus einer aufgedampften Siliziumoxydschicht besteht. Lediglich im Bereich der elektrischen Kontaktierung 5 besitzt diese Isolier schicht eine Öffnung, durch welche hindurch die Kontaktierungsschicht 8 direkt mit der p-Zone 1 des Detektorelementes verbunden ist. Die Kontaktierungschicht 8 besteht bevorzugt aus einem metallischen Mate rial, das für die zu detektierende IR-Strahlung 10 undurchlässig ist, so daß an dieser Stelle bei Auftreffen von IR-Strahlung keine Minoritätsträger auftreten können.The figure shows schematically the cross section through a detector element of an IR detector. The substrate 2 consists of n-doped InSb and the surface region 1 facing the radiation 10 is p-doped. The individual detector elements are separated by known etching processes. The entire surface of the substrate, that is to say both the n-doped and the p-doped surface regions, are coated with an insulating layer 3 , which preferably consists of a vapor-deposited silicon oxide layer. Only in the area of the electrical contact 5 does this insulating layer have an opening through which the contact layer 8 is directly connected to the p-zone 1 of the detector element. The contacting layer 8 preferably consists of a metallic material which is impermeable to the IR radiation 10 to be detected, so that no minority carriers can occur at this point when IR radiation is incident.
Um zu verhindern, daß IR-Strahlung auf andere Oberflächenbereiche des Substrats mit Ausnahme des gewünschten Detektorbereiches 4 auftrifft, ist eine für IR-Strahlung undurchlässige Metallschicht 7 auf die Isolierschicht 3 aufgebracht. Diese metallische Abdeck schicht 7 wird elektrisch leitend mit dem n-dotierten Substrat 2 verbunden. Dies erfolgt zweckmäßig an einer außerhalb der Detek torelementenzeile liegenden Stelle. Sie bildet eine metallische Abdeckmaske, deren Öffnungen im Detektorbereich 4 optische Fen ster für die zu detektierende IR-Strahlung 10 darstellen. Die me tallische Abdeckmaske 7 besteht bevorzugt aus aufgedampftem Me tall und ist insbesondere dreischichtig aufgebaut. Es wird zweck mäßig zunächst eine Chromschicht 71 aufgedampft. Auf diese Chrom schicht 71 wird dann eine Goldschicht 72 aufgedampft, die im we sentlichen als die strahlungsundurchlässige Metallschicht wirkt. Auf diese Goldschicht 72 wird dann wiederum eine dünne Chrom schicht 73 aufgedampft. Es hat sich gezeigt, daß eine solche aus drei Schichten bestehende Abdeckmaske zum einen sehr gut an den verwendeten Isolierschichten haftet und zum anderen eine sehr gute optische Abschirmung gegen die IR-Strahlung bewirkt.In order to prevent IR radiation from striking other surface areas of the substrate with the exception of the desired detector area 4 , a metal layer 7 which is impermeable to IR radiation is applied to the insulating layer 3 . This metallic cover layer 7 is electrically conductively connected to the n-doped substrate 2 . This is expediently carried out at a point outside the detector element row. It forms a metallic mask, the openings in the detector area 4 represent optical windows for the IR radiation 10 to be detected. The metallic cover mask 7 is preferably made of evaporated metal and is in particular constructed in three layers. It is expedient first to evaporate a chrome layer 71 . A gold layer 72 is then evaporated onto this chrome layer 71 , which acts essentially as the radiation-impermeable metal layer. A thin chrome layer 73 is then in turn evaporated onto this gold layer 72 . It has been shown that such a mask consisting of three layers on the one hand adheres very well to the insulating layers used and on the other hand provides very good optical shielding against IR radiation.
Gemäß einem bevorzugten Ausführungsbeispiel ist es vorteilhaft, auf diese metallische Abdeckmaske 7 eine weitere Isolierschicht 6 aufzubringen. Diese dient unter anderen dazu, das Aufbringen der Kontaktierungsschicht 8 für die p-Zone zu ermöglichen. Auf dieser Isolierschicht 6 kann die Kontaktierungsschicht 8 dann beliebig geformt geführt werden. According to a preferred embodiment, it is advantageous to apply a further insulating layer 6 to this metallic mask 7 . Among other things, this serves to enable the application of the contacting layer 8 for the p-zone. The contacting layer 8 can then be guided in any shape on this insulating layer 6 .
Die Dicke der im Bereich der optischen Fenster 4 befindlichen Teile der Isolierschichten 3 und 6 wird zweckmäßig so gewählt, daß sie als reflexmindernde Vergütungsschicht wirkt.The thickness of the parts of the insulating layers 3 and 6 located in the region of the optical windows 4 is expediently chosen so that it acts as a reflection-reducing coating.
Claims (10)
daß die Detektorelemente jeweils aus einem ersten und einem zweiten Halbleiterschichtbereich entgegengesetzten Leitungstyps bestehen,
daß der der zu detektierenden Strahlung zugewandte erste Schichtbereich mit einer Kontaktierungselektrode versehen ist, und
daß die zweiten Schichtbereiche mit der metallischen Abdeckmaske elektrisch leitend verbunden sind.1. Radiation detector with a semiconductor substrate, the surface facing the radiation to be detected a plurality of detector elements and one for the radiation to be detected by a casual insulating layer and thereon an impermeable metallic radiation mask for the radiation to be detected, which is provided with the individual detector elements assigned openings , in such a way that an impact of the radiation to be detected on surface areas of the substrate other than the detector elements is substantially prevented, characterized in that
that the detector elements each consist of a first and a second semiconductor layer region of opposite conductivity type,
that the first layer region facing the radiation to be detected is provided with a contacting electrode, and
that the second layer areas are electrically conductively connected to the metallic mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3617229A DE3617229C2 (en) | 1986-05-22 | 1986-05-22 | Radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3617229A DE3617229C2 (en) | 1986-05-22 | 1986-05-22 | Radiation detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3617229A1 DE3617229A1 (en) | 1987-11-26 |
| DE3617229C2 true DE3617229C2 (en) | 1997-04-30 |
Family
ID=6301378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3617229A Expired - Lifetime DE3617229C2 (en) | 1986-05-22 | 1986-05-22 | Radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3617229C2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4879470A (en) * | 1987-01-16 | 1989-11-07 | Canon Kabushiki Kaisha | Photoelectric converting apparatus having carrier eliminating means |
| JPH01164073A (en) * | 1987-09-11 | 1989-06-28 | Canon Inc | Optoelectric conversion device |
| CA2070708C (en) * | 1991-08-08 | 1997-04-29 | Ichiro Kasai | Visible and infrared indium antimonide (insb) photodetector with non-flashing light receiving surface |
| DE4212948A1 (en) * | 1992-04-18 | 1993-10-21 | Telefunken Microelectron | Semiconductor module, in particular remote control receiver module |
| EP0653106A1 (en) * | 1993-05-28 | 1995-05-17 | Santa Barbara Research Center | INDIUM ANTIMONIDE (InSb) PHOTODETECTOR DEVICE AND STRUCTURE FOR INFRARED, VISIBLE AND ULTRAVIOLET RADIATION |
| DE19654828C1 (en) * | 1996-12-23 | 1998-01-15 | Fraunhofer Ges Forschung | Microchip manufacturing method for photoelectronic microchip with opaque film |
| DE102008030750A1 (en) * | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Radiation detector, has passive area formed along side surfaces for controlling addition of radiations irradiated laterally in direction of active area for producing signal of radiation detector in active area of semiconductor body |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4412236A (en) * | 1979-08-24 | 1983-10-25 | Hitachi, Ltd. | Color solid-state imager |
-
1986
- 1986-05-22 DE DE3617229A patent/DE3617229C2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3617229A1 (en) | 1987-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2415187C3 (en) | Semiconductor batteries and processes for their manufacture | |
| EP1468309A2 (en) | Detector for detecting particle beams and method for the production thereof | |
| DE1639255C2 (en) | Integrated semiconductor circuit with an insulated gate field effect transistor | |
| DE1954694C3 (en) | Signal storage disk for a pickup tube with an electron beam source and method for its manufacture | |
| DE3906018A1 (en) | METHOD FOR ENCODING LADDERS | |
| DE2817258A1 (en) | METHOD OF PRODUCING AN INSULATING LAYER FIELD EFFECT TRANSISTOR STRUCTURE | |
| DE19638666C1 (en) | Fuse with a protective layer in an integrated semiconductor circuit and associated manufacturing process | |
| DE3500645C2 (en) | Photosensor arrangement | |
| DE2210165A1 (en) | Charge coupled semiconductor device | |
| DE2911484C2 (en) | Metal-insulator-semiconductor component | |
| DE3617229C2 (en) | Radiation detector | |
| DE4036109A1 (en) | RESISTANCE TEMPERATURE SENSOR | |
| DE2941268A1 (en) | METHOD FOR PRODUCING SEMICONDUCTOR ARRANGEMENTS AND SEMICONDUCTOR ARRANGEMENTS MANUFACTURED THEREOF | |
| EP0007384A1 (en) | One-dimensional CCD-sensor with overflow device | |
| DE19639176A1 (en) | Electrode manufacturing method for electronic component e.g. ceramic oscillator | |
| DE3024295C2 (en) | Ion probes and methods of making them | |
| DE3733114A1 (en) | RADIATION DETECTOR | |
| DE3717157C2 (en) | ||
| EP0095658A2 (en) | Planar semiconductor device and method of making the same | |
| DE2342923C2 (en) | Method for producing a two-phase charge transfer arrangement and two-phase charge transfer arrangement produced according to this method | |
| DE2262047C2 (en) | Image pickup device based on the charge transfer principle | |
| DE2039027C3 (en) | Semiconductor arrangement with a carrier made of insulating material, a semiconductor component and a connection pad | |
| DE2351254B2 (en) | Method of manufacturing a multi-diode storage disk for an image pickup tube | |
| DE1813551C3 (en) | High frequency planar transistor | |
| DE2553591C2 (en) | Memory matrix with one or more single-transistor memory elements |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8120 | Willingness to grant licences paragraph 23 | ||
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H01L 27/146 |
|
| 8127 | New person/name/address of the applicant |
Owner name: AEG INFRAROT-MODULE GMBH, 74072 HEILBRONN, DE |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: AIM INFRAROT-MODULE GMBH, 74072 HEILBRONN, DE |