CA2137567A1 - Methods of chemical vapor deposition (cvd) of films on patterned wafer substrates - Google Patents
Methods of chemical vapor deposition (cvd) of films on patterned wafer substratesInfo
- Publication number
- CA2137567A1 CA2137567A1 CA002137567A CA2137567A CA2137567A1 CA 2137567 A1 CA2137567 A1 CA 2137567A1 CA 002137567 A CA002137567 A CA 002137567A CA 2137567 A CA2137567 A CA 2137567A CA 2137567 A1 CA2137567 A1 CA 2137567A1
- Authority
- CA
- Canada
- Prior art keywords
- patterned wafer
- wafer substrate
- reaction chamber
- cvd
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 71
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 63
- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 239000007789 gas Substances 0.000 claims abstract description 51
- 238000006243 chemical reaction Methods 0.000 claims abstract description 50
- 238000000151 deposition Methods 0.000 claims abstract description 43
- 239000000376 reactant Substances 0.000 claims abstract description 40
- 239000006104 solid solution Substances 0.000 claims abstract description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 20
- 229910052721 tungsten Inorganic materials 0.000 claims description 20
- 239000010937 tungsten Substances 0.000 claims description 20
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 5
- 239000005360 phosphosilicate glass Substances 0.000 claims description 5
- 150000003658 tungsten compounds Chemical class 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 45
- 230000008021 deposition Effects 0.000 abstract description 32
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 92
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000007888 film coating Substances 0.000 description 5
- 238000009501 film coating Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 241000478345 Afer Species 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- HSOOQFAXHJTBSU-UHFFFAOYSA-N CC[Fe]CC Chemical compound CC[Fe]CC HSOOQFAXHJTBSU-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910008814 WSi2 Inorganic materials 0.000 description 1
- DOQPXTMNIUCOSY-UHFFFAOYSA-N [4-cyano-4-(3,4-dimethoxyphenyl)-5-methylhexyl]-[2-(3,4-dimethoxyphenyl)ethyl]-methylazanium;chloride Chemical compound [H+].[Cl-].C1=C(OC)C(OC)=CC=C1CCN(C)CCCC(C#N)(C(C)C)C1=CC=C(OC)C(OC)=C1 DOQPXTMNIUCOSY-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- VREFGVBLTWBCJP-UHFFFAOYSA-N alprazolam Chemical compound C12=CC(Cl)=CC=C2N2C(C)=NN=C2CN=C1C1=CC=CC=C1 VREFGVBLTWBCJP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229940116800 covera Drugs 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229940086255 perform Drugs 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/898,492 US5434110A (en) | 1992-06-15 | 1992-06-15 | Methods of chemical vapor deposition (CVD) of tungsten films on patterned wafer substrates |
| US898,492 | 1992-06-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2137567A1 true CA2137567A1 (en) | 1993-12-23 |
Family
ID=25409541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002137567A Abandoned CA2137567A1 (en) | 1992-06-15 | 1993-06-09 | Methods of chemical vapor deposition (cvd) of films on patterned wafer substrates |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5434110A (enExample) |
| EP (1) | EP0644952B1 (enExample) |
| JP (1) | JP3282813B2 (enExample) |
| KR (1) | KR100294566B1 (enExample) |
| AU (1) | AU4531693A (enExample) |
| CA (1) | CA2137567A1 (enExample) |
| DE (1) | DE69301031T2 (enExample) |
| TW (1) | TW253064B (enExample) |
| WO (1) | WO1993025722A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0758036A (ja) * | 1993-08-16 | 1995-03-03 | Ebara Corp | 薄膜形成装置 |
| US5665640A (en) | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
| US5628829A (en) | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
| AU1745695A (en) | 1994-06-03 | 1996-01-04 | Materials Research Corporation | A method of nitridization of titanium thin films |
| US5975912A (en) | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
| US5610106A (en) * | 1995-03-10 | 1997-03-11 | Sony Corporation | Plasma enhanced chemical vapor deposition of titanium nitride using ammonia |
| US5567483A (en) * | 1995-06-05 | 1996-10-22 | Sony Corporation | Process for plasma enhanced anneal of titanium nitride |
| US5811762A (en) * | 1996-09-25 | 1998-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heater assembly with dual temperature control for use in PVD/CVD system |
| US5963836A (en) * | 1996-12-03 | 1999-10-05 | Genus, Inc. | Methods for minimizing as-deposited stress in tungsten silicide films |
| US6335280B1 (en) * | 1997-01-13 | 2002-01-01 | Asm America, Inc. | Tungsten silicide deposition process |
| US5989652A (en) * | 1997-01-31 | 1999-11-23 | Tokyo Electron Limited | Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications |
| US5834371A (en) * | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
| US5906866A (en) * | 1997-02-10 | 1999-05-25 | Tokyo Electron Limited | Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface |
| US6271121B1 (en) | 1997-02-10 | 2001-08-07 | Tokyo Electron Limited | Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface |
| US5926737A (en) * | 1997-08-19 | 1999-07-20 | Tokyo Electron Limited | Use of TiCl4 etchback process during integrated CVD-Ti/TiN wafer processing |
| US6161500A (en) * | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
| US5976990A (en) * | 1998-01-09 | 1999-11-02 | Micron Technology, Inc. | Method for optimization of thin film deposition |
| US6289842B1 (en) | 1998-06-22 | 2001-09-18 | Structured Materials Industries Inc. | Plasma enhanced chemical vapor deposition system |
| US6302057B1 (en) | 1998-09-15 | 2001-10-16 | Tokyo Electron Limited | Apparatus and method for electrically isolating an electrode in a PECVD process chamber |
| US6245668B1 (en) | 1998-09-18 | 2001-06-12 | International Business Machines Corporation | Sputtered tungsten diffusion barrier for improved interconnect robustness |
| JP3069336B2 (ja) * | 1998-12-04 | 2000-07-24 | キヤノン販売株式会社 | 成膜装置 |
| US6173673B1 (en) | 1999-03-31 | 2001-01-16 | Tokyo Electron Limited | Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber |
| JP2001060564A (ja) * | 1999-08-23 | 2001-03-06 | Nec Corp | 半導体装置の製造方法 |
| CN100358098C (zh) * | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
| US8859417B2 (en) | 2013-01-03 | 2014-10-14 | Globalfoundries Inc. | Gate electrode(s) and contact structure(s), and methods of fabrication thereof |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4930319B1 (enExample) * | 1969-08-29 | 1974-08-12 | ||
| US4794019A (en) * | 1980-09-04 | 1988-12-27 | Applied Materials, Inc. | Refractory metal deposition process |
| JPS5772318A (en) * | 1980-10-24 | 1982-05-06 | Seiko Epson Corp | Vapor growth method |
| US4565157A (en) * | 1983-03-29 | 1986-01-21 | Genus, Inc. | Method and apparatus for deposition of tungsten silicides |
| US4851295A (en) * | 1984-03-16 | 1989-07-25 | Genus, Inc. | Low resistivity tungsten silicon composite film |
| JPS61275135A (ja) * | 1985-03-11 | 1986-12-05 | アプライド マテリアルズ インコ−ポレ−テツド | 硼燐珪酸塩ガラスの形成方法 |
| US4654509A (en) * | 1985-10-07 | 1987-03-31 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
| US4798165A (en) * | 1985-10-07 | 1989-01-17 | Epsilon | Apparatus for chemical vapor deposition using an axially symmetric gas flow |
| US4789771A (en) * | 1985-10-07 | 1988-12-06 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
| JPS632330A (ja) * | 1986-06-23 | 1988-01-07 | Fujitsu Ltd | 化学気相成長方法 |
| US4994301A (en) * | 1986-06-30 | 1991-02-19 | Nihon Sinku Gijutsu Kabusiki Kaisha | ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate |
| US4772356A (en) * | 1986-07-03 | 1988-09-20 | Emcore, Inc. | Gas treatment apparatus and method |
| US4800105A (en) * | 1986-07-22 | 1989-01-24 | Nihon Shinku Gijutsu Kabushiki Kaisha | Method of forming a thin film by chemical vapor deposition |
| US4839145A (en) * | 1986-08-27 | 1989-06-13 | Massachusetts Institute Of Technology | Chemical vapor deposition reactor |
| US4868003A (en) * | 1986-11-26 | 1989-09-19 | Optical Coating Laboratory, Inc. | System and method for vacuum deposition of thin films |
| JPS63137158A (ja) * | 1986-11-27 | 1988-06-09 | Nissin Electric Co Ltd | アルミ薄膜の作製方法 |
| US4976996A (en) * | 1987-02-17 | 1990-12-11 | Lam Research Corporation | Chemical vapor deposition reactor and method of use thereof |
| US4993355A (en) * | 1987-03-31 | 1991-02-19 | Epsilon Technology, Inc. | Susceptor with temperature sensing device |
| US4821674A (en) * | 1987-03-31 | 1989-04-18 | Deboer Wiebe B | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| US4996942A (en) * | 1987-03-31 | 1991-03-05 | Epsilon Technology, Inc. | Rotatable substrate supporting susceptor with temperature sensors |
| US4846102A (en) * | 1987-06-24 | 1989-07-11 | Epsilon Technology, Inc. | Reaction chambers for CVD systems |
| US4828224A (en) * | 1987-10-15 | 1989-05-09 | Epsilon Technology, Inc. | Chemical vapor deposition system |
| JPH02295116A (ja) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | 半導体製造装置 |
| JPH0687463B2 (ja) * | 1989-08-24 | 1994-11-02 | 株式会社東芝 | 半導体気相成長装置 |
| JPH0394061A (ja) * | 1989-09-07 | 1991-04-18 | Nisshin Steel Co Ltd | タングステンルツボの製造方法 |
| US5068124A (en) * | 1989-11-17 | 1991-11-26 | International Business Machines Corporation | Method for depositing high quality silicon dioxide by pecvd |
| US5106453A (en) * | 1990-01-29 | 1992-04-21 | At&T Bell Laboratories | MOCVD method and apparatus |
| US5040046A (en) * | 1990-10-09 | 1991-08-13 | Micron Technology, Inc. | Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby |
| JPH0613701A (ja) * | 1992-06-25 | 1994-01-21 | Fujitsu Ltd | 半導体レーザの製造方法 |
-
1992
- 1992-06-15 US US07/898,492 patent/US5434110A/en not_active Expired - Fee Related
-
1993
- 1993-06-09 EP EP93915266A patent/EP0644952B1/en not_active Expired - Lifetime
- 1993-06-09 WO PCT/US1993/005517 patent/WO1993025722A1/en not_active Ceased
- 1993-06-09 AU AU45316/93A patent/AU4531693A/en not_active Abandoned
- 1993-06-09 KR KR1019940704611A patent/KR100294566B1/ko not_active Expired - Fee Related
- 1993-06-09 JP JP50169694A patent/JP3282813B2/ja not_active Expired - Fee Related
- 1993-06-09 CA CA002137567A patent/CA2137567A1/en not_active Abandoned
- 1993-06-09 DE DE69301031T patent/DE69301031T2/de not_active Expired - Fee Related
- 1993-09-24 TW TW082107864A patent/TW253064B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW253064B (enExample) | 1995-08-01 |
| DE69301031D1 (de) | 1996-01-25 |
| AU4531693A (en) | 1994-01-04 |
| EP0644952B1 (en) | 1995-12-13 |
| US5434110A (en) | 1995-07-18 |
| KR100294566B1 (ko) | 2001-09-17 |
| EP0644952A1 (en) | 1995-03-29 |
| JP3282813B2 (ja) | 2002-05-20 |
| WO1993025722A1 (en) | 1993-12-23 |
| JPH07507842A (ja) | 1995-08-31 |
| DE69301031T2 (de) | 1996-09-05 |
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