CA2084820A1 - Lasers heterostructure enfouie fabriques par depot de vapeur organique sur un substrat metallique - Google Patents

Lasers heterostructure enfouie fabriques par depot de vapeur organique sur un substrat metallique

Info

Publication number
CA2084820A1
CA2084820A1 CA2084820A CA2084820A CA2084820A1 CA 2084820 A1 CA2084820 A1 CA 2084820A1 CA 2084820 A CA2084820 A CA 2084820A CA 2084820 A CA2084820 A CA 2084820A CA 2084820 A1 CA2084820 A1 CA 2084820A1
Authority
CA
Canada
Prior art keywords
lasers
mocvd growth
emit
buried heterostructure
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2084820A
Other languages
English (en)
Other versions
CA2084820C (fr
Inventor
Paul Raymond Berger
Niloy Kumar Dutta
William Scott Hobson
John Lopata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2084820A1 publication Critical patent/CA2084820A1/fr
Application granted granted Critical
Publication of CA2084820C publication Critical patent/CA2084820C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2207—GaAsP based

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
CA002084820A 1992-01-24 1992-12-08 Lasers heterostructure enfouie fabriques par depot de vapeur organique sur un substrat metallique Expired - Fee Related CA2084820C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/825,208 US5208821A (en) 1992-01-24 1992-01-24 Buried heterostructure lasers using MOCVD growth over patterned substrates
US825,208 1992-01-24

Publications (2)

Publication Number Publication Date
CA2084820A1 true CA2084820A1 (fr) 1993-07-25
CA2084820C CA2084820C (fr) 1997-12-09

Family

ID=25243382

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002084820A Expired - Fee Related CA2084820C (fr) 1992-01-24 1992-12-08 Lasers heterostructure enfouie fabriques par depot de vapeur organique sur un substrat metallique

Country Status (7)

Country Link
US (1) US5208821A (fr)
EP (1) EP0552888B1 (fr)
JP (1) JP2545188B2 (fr)
KR (1) KR100187778B1 (fr)
CA (1) CA2084820C (fr)
DE (1) DE69300772T2 (fr)
HK (1) HK124396A (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3024354B2 (ja) * 1992-01-27 2000-03-21 日本電気株式会社 半導体レーザ
JP2798545B2 (ja) * 1992-03-03 1998-09-17 シャープ株式会社 半導体発光素子及びその製造方法
US5559053A (en) * 1994-04-14 1996-09-24 Lucent Technologies Inc. Vertical cavity semiconductor laser
US5674779A (en) * 1995-08-16 1997-10-07 Philips Electronics North America Corporation Method for fabricating a ridge-shaped laser in a channel
US5742631A (en) * 1996-07-26 1998-04-21 Xerox Corporation Independently-addressable monolithic laser arrays
US5880482A (en) * 1997-01-29 1999-03-09 The Board Of Trustees Of The University Of Illinios Low dark current photodetector
US6445723B1 (en) 1998-05-18 2002-09-03 Jds Uniphase Corporation Laser source with submicron aperture
JPH11354886A (ja) * 1998-06-10 1999-12-24 Nec Corp 半導体レーザおよびその製造方法
EP1218973A4 (fr) * 1999-09-03 2005-11-16 Univ California Source laser accordable modulateur optique int gr
KR100359739B1 (ko) * 2000-12-28 2002-11-09 한국과학기술연구원 이종 단결정박막의 접합 및 덧성장방법
KR100427581B1 (ko) * 2002-02-21 2004-04-28 한국전자통신연구원 반도체 광소자의 제조방법
JP2006278661A (ja) * 2005-03-29 2006-10-12 Opnext Japan Inc 光半導体素子及びその製造方法並びに光半導体装置
US7606279B1 (en) 2006-05-15 2009-10-20 Finisar Corporation Thin INP spacer layer in a high speed laser for reduced lateral current spreading
US8034648B1 (en) * 2006-05-15 2011-10-11 Finisar Corporation Epitaxial regrowth in a distributed feedback laser
US8277877B1 (en) 2006-05-15 2012-10-02 Finisar Corporation Method for applying protective laser facet coatings
US7763485B1 (en) 2006-05-15 2010-07-27 Finisar Corporation Laser facet pre-coating etch for controlling leakage current
US7567601B1 (en) 2006-05-15 2009-07-28 Finisar Corporation Semiconductor laser having low stress passivation layer
US7573925B1 (en) 2006-05-15 2009-08-11 Finisar Corporation Semiconductor laser having a doped active layer
JP5378651B2 (ja) * 2007-01-31 2013-12-25 日本オクラロ株式会社 半導体レーザ素子及びその製造方法
US8507304B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
US8148241B2 (en) * 2009-07-31 2012-04-03 Applied Materials, Inc. Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
JP5772005B2 (ja) 2011-01-21 2015-09-02 東洋紡株式会社 エアバッグ用基布
CN110190163B (zh) * 2019-05-24 2020-04-28 康佳集团股份有限公司 图形化衬底、外延片、制作方法、存储介质及led芯片

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4426701A (en) * 1981-12-23 1984-01-17 Rca Corporation Constricted double heterostructure semiconductor laser
US4839900A (en) * 1985-08-21 1989-06-13 Sharp Kabushiki Kaisha Buried type semiconductor laser device
US4749255A (en) * 1985-12-09 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Coating for optical devices
US4902644A (en) * 1986-03-28 1990-02-20 American Telephone And Telegraph Company At&T Bell Laboratories Preservation of surface features on semiconductor surfaces
JPH0646669B2 (ja) * 1987-07-28 1994-06-15 日本電気株式会社 半導体レ−ザ及びその製造方法
JPH01114092A (ja) * 1987-10-28 1989-05-02 Hitachi Ltd 埋込み型半導体レーザ
JPH01293687A (ja) * 1988-05-23 1989-11-27 Fuji Electric Co Ltd 半導体レーザ装置の製造方法
JPH0312981A (ja) * 1989-06-12 1991-01-21 Matsushita Electric Ind Co Ltd 半導体レーザ装置の製造方法

Also Published As

Publication number Publication date
DE69300772T2 (de) 1996-06-05
HK124396A (en) 1996-07-19
EP0552888B1 (fr) 1995-11-15
JPH0685405A (ja) 1994-03-25
KR100187778B1 (ko) 1999-06-01
CA2084820C (fr) 1997-12-09
JP2545188B2 (ja) 1996-10-16
DE69300772D1 (de) 1995-12-21
EP0552888A1 (fr) 1993-07-28
KR930017220A (ko) 1993-08-30
US5208821A (en) 1993-05-04

Similar Documents

Publication Publication Date Title
CA2084820A1 (fr) Lasers heterostructure enfouie fabriques par depot de vapeur organique sur un substrat metallique
US4594718A (en) Combination index/gain guided semiconductor lasers
US6465269B2 (en) Semiconductor optical device and method of manufacturing the same
US5747366A (en) Method of fabricating a surface emitting semiconductor laser
US6044098A (en) Deep native oxide confined ridge waveguide semiconductor lasers
CA1151775A (fr) Fabrication en serie de dispositifs a semi-conducteurs
US6821801B1 (en) Manufacturing method of semiconductor laser diode
EP0160515B1 (fr) Laser à semi-conducteur
EP0590951A2 (fr) Elément laser à semiconducteur
US20010001612A1 (en) Method of producing an optical semiconductor device having a waveguide layer buried in an InP current blocking layer
JP3859839B2 (ja) 屈折率導波型半導体レーザ装置
Asonen et al. High-power operation of aluminum-free (kappa= 0.98 mu m) pump laser for erbium-doped fiber amplifier
Dutta et al. Integrated external cavity laser
JP2002111125A (ja) 分布帰還型半導体レーザ
EP0284684B1 (fr) Laser à semi-conducteur avec canal inverse et substrat plan
US7042921B2 (en) Complex coupled single mode laser with dual active region
Williams et al. 1.55 µm DFB Lasers incorporating etched lateral taper spot size converters
US6350629B1 (en) Optical semiconductor device having active layer and carrier recombination layer different from each other
RAYMOND et al. Buried heterostructure lasers using mocvd growth over patterned substrates
US6618419B1 (en) Semiconductor laser
Honda et al. Low threshold current AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed-feedback lasers grown by metalorganic chemical vapor deposition
JPS61176181A (ja) 半導体発光装置
Cheng et al. Low-threshold native-oxide confined narrow-stripe folded-cavity surface-emitting InGaAs-GaAs lasers
JPH0722692A (ja) 半導体レーザ
JP2548363B2 (ja) 半導体レーザ装置

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed