CA2038295A1 - High speed fail processor - Google Patents

High speed fail processor

Info

Publication number
CA2038295A1
CA2038295A1 CA 2038295 CA2038295A CA2038295A1 CA 2038295 A1 CA2038295 A1 CA 2038295A1 CA 2038295 CA2038295 CA 2038295 CA 2038295 A CA2038295 A CA 2038295A CA 2038295 A1 CA2038295 A1 CA 2038295A1
Authority
CA
Canada
Prior art keywords
fail
memories
failure information
sequence
failure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA 2038295
Other languages
French (fr)
Inventor
Brian Jerrold Arkin
Benjamin Joseph Brown
Peter Addison Reichert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teradyne Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2038295A1 publication Critical patent/CA2038295A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • G01R31/319Tester hardware, i.e. output processing circuits
    • G01R31/3193Tester hardware, i.e. output processing circuits with comparison between actual response and known fault free response
    • G01R31/31935Storing data, e.g. failure memory
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/317Testing of digital circuits
    • G01R31/3181Functional testing
    • G01R31/319Tester hardware, i.e. output processing circuits
    • G01R31/31917Stimuli generation or application of test patterns to the device under test [DUT]
    • G01R31/31919Storing and outputting test patterns

Abstract

Abstract An apparatus for processing failure information received from a node of a circuit under test. The apparatus includes a fail processor which receives test data from a node and generates failure data based upon the test data, a plurality of fail memories, each memory being configured to receive and store certain fail data, and a sequence memory configured to store sequence information indicating in what order the failure data is stored in the plurality of fail memories.

Description

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HIGH SPEED FAIL PROCESSOR
sackaround of the Invention The invention relates to fail processors.
It is known to generate patterns which are used in automatic test equipment by providing a high speed pattern generator which generates address sequences which are sent to a pluxality of local generator circuits. Each local generator circuit includes a high speed local memory, a multiplicity of timing generators, a multiplicity of corresponding interpolators, a high speed formatter and a high speed fail processor. The timing generatoxs and interpolators run in an interleaved fashion, with one timing generator/interpolator set receiving and gen-erating all even cycle information and the other setreceiving and generating all odd information.
Summarv of the Invention It has been discovered that providing a fail processor which receives test data from a node and generates failure data based upon the test data, a plurality of fail memories, each memory being con-figured to receive and store certain fail data, and a sequence memory configured to store sequence infor-ma~ion indicating in what order the failure data is stored in the plurality of fail memories provides an apparatus for processing failure information received from a node of a circuit under test.
Descriution of the Preferre_ Embodiment The attached drawings illustrate the preferred embodiment, the structure and operation of which is then described.

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Drawinas Fig. 1 is a schematic-block diagram of a test system according to the present invention.
Figs. 2-4 are examples of-how failure in-S formation is stored in'the Fig. 1 test system.
Structure Referring to Fig. 1, test system 10 includes pattern generato~ circuit 12, distribution circuit 14 and a plurality of local generator circuits,l6. Each local generator circuit provides a signal at node 20 to a circuit under test (CUT) 22.
Pattern generator circuit 12 includes con-ventionally designed high speed pattern generator 30 which provides address patterns at a frequency of 122.0703125 MHz (generally, and hereinafter, ~eferred to as "120 MHz", and its half as "60 MHz") and fre-quency divider circuit 3Z which receives the high frequency patte-rns generated by pattern generator 30 and provides a pair of lower fre~uency addresses which are half the frequency (i.e., 60 MHz~ of the high frequency addresses generated by pattern genera-tor 30.
Distribution circuit 14 includes a pai_ of signal distribution paths 40, 42. Each signal dis-tribution path 40, 42 includeS a parallel-multibit bus which simultaneously provides the lower frequency address to a plurality of local generator circuitS 16.
Each local generator circuit 16 includes a pair of signal generating circuits 50, 52. Signal generating circuit 50 includes local memory 5~l, which receivPs information ~rom distribution patA 40 and provides a data output to timing generator 56, t mln~
generator 56 which receives the data out-u' ~nd ,. .

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provides a timins generator output to interpolator circuit 58. Likewise, signal path S2 includes local memory 60, which receives information from distribu-tion path 42, timing generator 62, which receives information from locaL memory 60, and interpolator circuit 64, which receives information from timing generator 62.
Interpolator circuits 58 and 64 provide signals to high speed fcrmatter 66. Formatter 66 is a conventional emitter coupled logic (ECL) high speed ormatter which receives timing pulses and data and provides a two bit ~averorm indicating level and tri-state at a particular time. Driver 68 receives these signals, and provides an output to node 20 having the.
lS correct voltage levels and tri-state conditions for the particular CUT.
Dual detector 70 is also connected to node 20; dual detector 70 receives signals from node 20 and provides an out2ut to high speed formatter 66.
High speed formatter 66 is also connected to a pair o fail processors 72, 74. Fail processors 72, 74 include respective fail ~.emo-ies 76, 78. Each fail memory 76, 78 includes se~uence memory portion 80, 82.
ODeration Referriny to Fig. l, system lO both prcvides signals to and detects infor~ation from node 20 of .
CUT. More specifically, when providing sisna1s to node 20, pattern generator 30 generat_s add-ess patterns at a frequency of 120 ~IHz. This in_e.,mati~n 30 is provided to ~requency dividr'r circui~ ' ~ w, -h receives the 120 ~lHz address pattern and ~r^~ tJo alternating cycles of half speed (i,e., 6G

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address patterns to signal distribution paths 40, 42, respectively. Alternate cycles move respectively ovex lines 40 and 42, even over the former and odd over the latter; and successive cycles are identifie d by their leading edges. Because the pattern is frequency divided prior to transmission to local generators 16, signal distribution paths 40, 42 need only be appropriate for transmitting signals having a frequency of 60 M~lz rather than signals having a frequency of 120 MHz.
At power-up and at the start-up ofeach pattern burst, system 10 is resynchronized. More specifically, frequency divider circuit 32 is con-figured so that at power-up, as well as when it is resynchronized, the ne~t signal provided by frequency divider circuit 32 is over signal path 40.
Distribution circuit 14 provides the two half speed address patterns generated by divider circuit 32 to 512 channels. Each channel includes a local generator circuit 16, as shown in Fig. lo Each iocal generator circuit 16 provides a high frequency signal to, and detects a high frequency signal from, node 20. When detecting sig-nals from node 20, dual detector receives the high frequency signal and provides the high frequency signal to formatter 66. Formatter 66 provides two half speed signals to fail processors 72, 74; the half speed signals correspond to the cycles o~ the half speed address patterns. Fail processorS store the failure information in fail memories 76, 78, which function independently at half the speed or ~ ( 2 ~ 3 ~3 r~ 9 ~

formatter 66. Because fail memo~ies 76, 78 function at half the speed of formatter 66, lower cost memories may be used.
Information may be stored in fail memories 76, 78 in one of three modes of operation. In a store all (Store All) mode, failure information is continu-ally, alternately written into successiYe locations of fail memories 76, 78. Fig. 2 shows an example of how the failure information is stored in the Store All mode. In a store this vector (STV) mode, failure information is selectively written into the fail mem-ories based upon the value of a vector bit. In a store only fail (SOF) mode, failure information is written into fail memories 76, 78 on cycles which contain a fail. Or, there may be chosen a combined STV and SOF mode. Fig. 3 sho-~Js an example of how the failure in~ormation is stored in fail memories 76, 78 for the STV mode and the SOF mode. It is apparent from Fig. 3 that in the STV mode and the SOF
mode the failure information is stored in the fail memory which corresponds to the cycle in which the information was generated. Accordingly, to recon-struct ~he sequence in which the ~ailure information was stored in fail memories 76, 78 further information is necessary.
In order to reconstruct the failure infor-mation storage sequence, fail memories 76, 78 use respective sequence memory portions 80, 82. Pig.~l shows an example of how the failure and sequence in-formation is stored in fail memories 76, 78 and `, ~ ',, ' . , : ; .
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sequence memory portions 80, 82. Sequence memoryportions 80, 82 allow the failure information storage sequence to be reconstructed by trac~in~ the lailure information as the information is stored. More ~pecifically, a low is stored in a respective sequence memory portion if the previous write was in the same path. A high is stored in a respective sequence memory portion if the previous write was in the other path. By using this information, the failure information storage sequence can be easily reconstructed.
Other Embodi~ents Fail processors 72, 74 may be connected to a common sequence memory. By cent-ally storing the sequence information, the fail memori~s may operate independently. Add tionalL~, because the se~uence information is centrally stored, fail mem-ories 72, 74 may be distributed without providing local means for determining the secuence of stored bits.
Additionally, while the preferred embodimen~
includes two signal generatlon paths, the system l~ay operate with one signal generation path but a plur21ity of fail processors. In such a system, the failure information may be stored at a lower ~requenc~
than the generated patterns.
Additionally, while the ~referrcd embodiment includes two fail prccessor~ and two fail memorieS, the system may ~lso operate with one fail prcc2ssOr and t~,/o fail memorIes. In 5uch a system, the .-ailu-e infor~ation may be stored at a lower fr ~a~e.~~, t~._n th2t at which the fail processor operatcs.

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2~38295 Additionally, while the preferred embodiment shows two fall memories, the number of fail memories may be lncrease~ simply by providin~ more bits to a sequence memory; the bits indicate where in which memory previous write is located.

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Claims (9)

1. An apparatus for processing failure information received from a node of a circuit under test comprising a fail processor configured to receive test data from said node and to generate failure data based upon said test data, a plurality of fail memories, each fail memory being configured to receive and store certain said failure data, and a sequence memory configured to store sequence information, said sequence information indicating in what order said failure data is stored in said plurality of fail memories.
2. The apparatus of claim 1 wherein, said sequence information is stored as said failure information is stored.
3. The apparatus of claim 1 further comprising, a plurality of fail processors, and a formatter configured to receive said test data from said node and to provide a plurality of test data signals to respective said fail processors.
4. The apparatus of claim 3 wherein said plurality of fail processors correspond to said plurality of fail memories.
5. The apparatus of claim 1 further comprising a plurality of said sequence memories, each said sequence memory corresponding to a particular fail memory.
6. The apparatus of claim 1 wherein said sequence memory allows said fail memories to function asynchronously.
7. A method of processing failure information received from a node of a circuit under test comprising storing failure information from said node in a plurality of fail memories, tracking a failure information storage sequence as said failure information is stored in said plurality of fail memories to allow said failure information storage sequence to be reconstructed.
8. The method of claim 7 wherein said failure information includes a storage vector, and said failure information is stored in said failure memories on cycles in which said storage vector indicates to do so.
9. The method of claim 7 further compris-ing providing a fail processor configured to receive said failure information and to determine whether said failure information indicates a fail condition at said node, and storing only failure information which corresponds to a fail condition (STV, SOF, or both) in said plurality of memories.
CA 2038295 1990-03-16 1991-03-14 High speed fail processor Abandoned CA2038295A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49460190A 1990-03-16 1990-03-16
US494,601 1990-03-16

Publications (1)

Publication Number Publication Date
CA2038295A1 true CA2038295A1 (en) 1991-09-17

Family

ID=23965152

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2038295 Abandoned CA2038295A1 (en) 1990-03-16 1991-03-14 High speed fail processor

Country Status (5)

Country Link
JP (1) JP2635229B2 (en)
CA (1) CA2038295A1 (en)
DE (1) DE4108594C2 (en)
FR (1) FR2659745B1 (en)
GB (1) GB2243702B (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748650A (en) * 1972-08-21 1973-07-24 Ibm Input/output hardware trace monitor
ES534331A0 (en) * 1983-07-13 1985-10-16 Instrumentation Engineering IMPROVEMENTS IN A DIGITAL GENERATOR OF WORDS
US4656632A (en) * 1983-11-25 1987-04-07 Giordano Associates, Inc. System for automatic testing of circuits and systems
US4709366A (en) * 1985-07-29 1987-11-24 John Fluke Mfg. Co., Inc. Computer assisted fault isolation in circuit board testing
US4816750A (en) * 1987-01-16 1989-03-28 Teradyne, Inc. Automatic circuit tester control system
US4875210A (en) * 1988-01-06 1989-10-17 Teradyne, Inc. Automatic circuit tester control system
DE3827959A1 (en) * 1988-08-17 1990-02-22 Siemens Ag Test set for the functional testing of electronic modules

Also Published As

Publication number Publication date
FR2659745A1 (en) 1991-09-20
GB2243702A (en) 1991-11-06
GB2243702B (en) 1993-08-11
DE4108594A1 (en) 1991-10-10
FR2659745B1 (en) 1994-05-06
JP2635229B2 (en) 1997-07-30
DE4108594C2 (en) 1993-11-11
JPH05126905A (en) 1993-05-25
GB9105577D0 (en) 1991-05-01

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