CA2036874A1 - Detecteur de radiation par bande interdite et procede de fabrication - Google Patents
Detecteur de radiation par bande interdite et procede de fabrication Download PDFInfo
- Publication number
- CA2036874A1 CA2036874A1 CA002036874A CA2036874A CA2036874A1 CA 2036874 A1 CA2036874 A1 CA 2036874A1 CA 002036874 A CA002036874 A CA 002036874A CA 2036874 A CA2036874 A CA 2036874A CA 2036874 A1 CA2036874 A1 CA 2036874A1
- Authority
- CA
- Canada
- Prior art keywords
- detector
- radiation
- segments
- elements
- recited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 172
- 238000004519 manufacturing process Methods 0.000 title description 6
- 230000000903 blocking effect Effects 0.000 claims abstract description 16
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 39
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 19
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical group C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 230000000737 periodic effect Effects 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 5
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims 3
- 239000003362 semiconductor superlattice Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 43
- 239000000463 material Substances 0.000 abstract description 36
- 238000001816 cooling Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 136
- 239000004020 conductor Substances 0.000 description 25
- 238000010521 absorption reaction Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 22
- 229910045601 alloy Inorganic materials 0.000 description 17
- 239000000956 alloy Substances 0.000 description 17
- 239000005083 Zinc sulfide Substances 0.000 description 11
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 11
- 229910052984 zinc sulfide Inorganic materials 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- 239000000945 filler Substances 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 6
- 229910052753 mercury Inorganic materials 0.000 description 6
- 238000003491 array Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 4
- 238000005094 computer simulation Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- WCYWZMWISLQXQU-UHFFFAOYSA-N methyl Chemical compound [CH3] WCYWZMWISLQXQU-UHFFFAOYSA-N 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- -1 that is Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 238000003331 infrared imaging Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004611 spectroscopical analysis Methods 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 210000002287 horizontal cell Anatomy 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000645 Hg alloy Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 206010065042 Immune reconstitution inflammatory syndrome Diseases 0.000 description 1
- 101150081330 MOC1 gene Proteins 0.000 description 1
- 101100041989 Schizosaccharomyces pombe (strain 972 / ATCC 24843) sds23 gene Proteins 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000008264 cloud Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036651 mood Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- HSYFJDYGOJKZCL-UHFFFAOYSA-L zinc;sulfite Chemical compound [Zn+2].[O-]S([O-])=O HSYFJDYGOJKZCL-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0837—Microantennas, e.g. bow-tie
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
- H01Q21/062—Two dimensional planar arrays using dipole aerials
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002036874A CA2036874A1 (fr) | 1991-02-22 | 1991-02-22 | Detecteur de radiation par bande interdite et procede de fabrication |
| DE4107331A DE4107331B4 (de) | 1991-02-22 | 1991-03-07 | Infrarotstrahlungsquantendetektor |
| IT1991RM000248A IT1314365B1 (it) | 1991-02-22 | 1991-04-11 | Rivelatore di radiazioni nell'infrarosso e relativo metodo difabbricazione |
| FR9110580A FR2803948B1 (fr) | 1991-02-22 | 1991-08-23 | Detecteur de rayonnement, notamment de rayonnement infrarouge, et procede pour sa fabrication |
| GB9119200A GB2348539B (en) | 1991-02-22 | 1991-09-09 | Bandgap radiation detector and method of fabrication |
| JP80000792A JP2001318157A (ja) | 1991-02-22 | 1992-04-20 | バンドギャップ放射線検出器 |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002036874A CA2036874A1 (fr) | 1991-02-22 | 1991-02-22 | Detecteur de radiation par bande interdite et procede de fabrication |
| DE4107331A DE4107331B4 (de) | 1991-02-22 | 1991-03-07 | Infrarotstrahlungsquantendetektor |
| IT1991RM000248A IT1314365B1 (it) | 1991-02-22 | 1991-04-11 | Rivelatore di radiazioni nell'infrarosso e relativo metodo difabbricazione |
| FR9110580A FR2803948B1 (fr) | 1991-02-22 | 1991-08-23 | Detecteur de rayonnement, notamment de rayonnement infrarouge, et procede pour sa fabrication |
| GB9119200A GB2348539B (en) | 1991-02-22 | 1991-09-09 | Bandgap radiation detector and method of fabrication |
| JP80000792A JP2001318157A (ja) | 1991-02-22 | 1992-04-20 | バンドギャップ放射線検出器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2036874A1 true CA2036874A1 (fr) | 2002-07-10 |
Family
ID=28046955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002036874A Abandoned CA2036874A1 (fr) | 1991-02-22 | 1991-02-22 | Detecteur de radiation par bande interdite et procede de fabrication |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP2001318157A (fr) |
| CA (1) | CA2036874A1 (fr) |
| DE (1) | DE4107331B4 (fr) |
| FR (1) | FR2803948B1 (fr) |
| GB (1) | GB2348539B (fr) |
| IT (1) | IT1314365B1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8053734B2 (en) * | 2009-04-30 | 2011-11-08 | Raytehon Company | Nano-antenna for wideband coherent conformal IR detector arrays |
| US7923689B2 (en) * | 2009-04-30 | 2011-04-12 | Raytheon Company | Multi-band sub-wavelength IR detector having frequency selective slots and method of making the same |
| CN114649428B (zh) * | 2022-03-23 | 2023-02-17 | 中国科学院半导体研究所 | 新型二维/三维异质异构的高速光电探测器及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4445050A (en) * | 1981-12-15 | 1984-04-24 | Marks Alvin M | Device for conversion of light power to electric power |
| US4347526A (en) * | 1979-05-01 | 1982-08-31 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Radiation detectors |
| GB2207801B (en) * | 1979-07-30 | 1989-05-24 | Secr Defence | Thermal imaging devices |
| US4327291A (en) * | 1980-06-16 | 1982-04-27 | Texas Instruments Incorporated | Infrared charge injection device imaging system |
| GB2095900B (en) * | 1981-03-30 | 1985-01-09 | Philips Electronic Associated | Imaging devices and systems |
| DE3200853A1 (de) * | 1982-01-14 | 1983-07-21 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung mit einer bildaufnahmeeinheit und mit einer ausleseeinheit sowie verfahren zu ihrer herstellung |
| GB2207802B (en) * | 1982-08-27 | 1989-06-01 | Philips Electronic Associated | Thermal-radiation imaging devices and systems,and the manufacture of such imaging devices |
| US5248884A (en) * | 1983-10-11 | 1993-09-28 | The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland | Infrared detectors |
| US4888597A (en) * | 1987-12-14 | 1989-12-19 | California Institute Of Technology | Millimeter and submillimeter wave antenna structure |
| GB2239555B (en) * | 1989-03-01 | 1993-02-24 | Philips Electronic Associated | Infrared image-sensing devices and their manufacture |
| JPH0321078A (ja) * | 1989-06-19 | 1991-01-29 | Fujitsu Ltd | 赤外線検知素子 |
| JP2773930B2 (ja) * | 1989-10-31 | 1998-07-09 | 三菱電機株式会社 | 光検知装置 |
-
1991
- 1991-02-22 CA CA002036874A patent/CA2036874A1/fr not_active Abandoned
- 1991-03-07 DE DE4107331A patent/DE4107331B4/de not_active Expired - Fee Related
- 1991-04-11 IT IT1991RM000248A patent/IT1314365B1/it active
- 1991-08-23 FR FR9110580A patent/FR2803948B1/fr not_active Expired - Fee Related
- 1991-09-09 GB GB9119200A patent/GB2348539B/en not_active Expired - Fee Related
-
1992
- 1992-04-20 JP JP80000792A patent/JP2001318157A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1314365B1 (it) | 2002-12-09 |
| FR2803948A1 (fr) | 2001-07-20 |
| GB2348539A (en) | 2000-10-04 |
| GB2348539B (en) | 2001-02-21 |
| GB9119200D0 (en) | 2000-08-23 |
| DE4107331A1 (de) | 2003-07-03 |
| DE4107331B4 (de) | 2005-11-17 |
| JP2001318157A (ja) | 2001-11-16 |
| ITRM910248A0 (fr) | 1991-04-11 |
| FR2803948B1 (fr) | 2003-01-31 |
| ITRM910248A1 (it) | 1992-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDC | Discontinued application reinstated | ||
| FZDE | Discontinued |