CA2024134A1 - Hydrogen plasma passivation of gaas - Google Patents

Hydrogen plasma passivation of gaas

Info

Publication number
CA2024134A1
CA2024134A1 CA 2024134 CA2024134A CA2024134A1 CA 2024134 A1 CA2024134 A1 CA 2024134A1 CA 2024134 CA2024134 CA 2024134 CA 2024134 A CA2024134 A CA 2024134A CA 2024134 A1 CA2024134 A1 CA 2024134A1
Authority
CA
Canada
Prior art keywords
passivation
gaas
hydrogen plasma
plasma passivation
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA 2024134
Other languages
French (fr)
Other versions
CA2024134C (en
Inventor
Richard Alan Gottscho
Bryan L. Preppernau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2024134A1 publication Critical patent/CA2024134A1/en
Application granted granted Critical
Publication of CA2024134C publication Critical patent/CA2024134C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H01L21/3006—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Abstract of the Disclosure Hydrogen Plasma surface passivation of III-V Semiconductors is critically dependent on exposure time and pressure because of competition between plasma passivation and damage. Proper control of pressure according to the invention yields reproducible and stable passivation. Improved passivation is obtained using high pressure hydrogen plasmas, i.e. above 1 Torr.
CA 2024134 1989-09-01 1990-08-28 Hydrogen plasma passivation of gaas Expired - Fee Related CA2024134C (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US40703089A 1989-09-01 1989-09-01
US407,030 1989-09-01
US47701290A 1990-02-07 1990-02-07
US477,012 1990-02-07

Publications (2)

Publication Number Publication Date
CA2024134A1 true CA2024134A1 (en) 1991-03-02
CA2024134C CA2024134C (en) 1993-10-05

Family

ID=27019735

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2024134 Expired - Fee Related CA2024134C (en) 1989-09-01 1990-08-28 Hydrogen plasma passivation of gaas

Country Status (1)

Country Link
CA (1) CA2024134C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524562B2 (en) 2008-09-16 2013-09-03 Imec Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201012483D0 (en) * 2010-07-26 2010-09-08 Seren Photonics Ltd Light emitting diodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8524562B2 (en) 2008-09-16 2013-09-03 Imec Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device

Also Published As

Publication number Publication date
CA2024134C (en) 1993-10-05

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Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed