WO1991006976A3 - Process for producing an aluminum oxide layer on various substrates - Google Patents

Process for producing an aluminum oxide layer on various substrates

Info

Publication number
WO1991006976A3
WO1991006976A3 PCT/US1990/006391 US9006391W WO1991006976A3 WO 1991006976 A3 WO1991006976 A3 WO 1991006976A3 US 9006391 W US9006391 W US 9006391W WO 1991006976 A3 WO1991006976 A3 WO 1991006976A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
aluminum
arsenide
water
oxide
vapor
Prior art date
Application number
PCT/US1990/006391
Other languages
French (fr)
Other versions
WO1991006976A2 (en )
Inventor
Arold K Green
Victor L Rehn
Carey Scwartz
Original Assignee
Us Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures

Abstract

A process for producing an electrically insulating and protective layer of aluminum oxide on semiconductive, insulating, metallic and superconductive substrates is disclosed, which comprises forming an epitaxial or polycrystalline film of aluminum arsenide on the surface of the substrate, e.g. a gallium arsenide substrate, and exposing the aluminum arsenide coated substrate, e.g. gallium arsenide, to water vapor, e.g. the ambient atmosphere containing water vapor, at a sufficient water vapor pressure and for a period of time sufficient to substantially completely convert the aluminum arsenide to aluminum oxide.
PCT/US1990/006391 1989-11-07 1990-11-06 Process for producing an aluminum oxide layer on various substrates WO1991006976A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US43293189 true 1989-11-07 1989-11-07
US432,931 1989-11-07

Publications (2)

Publication Number Publication Date
WO1991006976A2 true WO1991006976A2 (en) 1991-05-16
WO1991006976A3 true true WO1991006976A3 (en) 1991-08-08

Family

ID=23718150

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1990/006391 WO1991006976A3 (en) 1989-11-07 1990-11-06 Process for producing an aluminum oxide layer on various substrates

Country Status (1)

Country Link
WO (1) WO1991006976A3 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190518B2 (en) 2004-10-25 2015-11-17 Intel Corporation Nonplanar device with thinned lower body portion and method of fabrication
US9224754B2 (en) 2008-06-23 2015-12-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US9368583B2 (en) 2005-02-23 2016-06-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US8183556B2 (en) 2005-12-15 2012-05-22 Intel Corporation Extreme high mobility CMOS logic
US7851780B2 (en) 2006-08-02 2010-12-14 Intel Corporation Semiconductor buffer architecture for III-V devices on silicon substrates
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008898A1 (en) * 1978-08-28 1980-03-19 Western Electric Company, Incorporated Method of forming an oxide layer on a group III-V compound
US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008898A1 (en) * 1978-08-28 1980-03-19 Western Electric Company, Incorporated Method of forming an oxide layer on a group III-V compound
US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Journal Vacuum Science & Technology, vol. 20, no. 3, March 1982, American Vacuum Society, J.A. Taylor: "An XPS study of the oxidation of AlAs films grown by MBE", pages 751-755 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190518B2 (en) 2004-10-25 2015-11-17 Intel Corporation Nonplanar device with thinned lower body portion and method of fabrication
US9368583B2 (en) 2005-02-23 2016-06-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US9224754B2 (en) 2008-06-23 2015-12-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US9450092B2 (en) 2008-06-23 2016-09-20 Intel Corporation Stress in trigate devices using complimentary gate fill materials

Also Published As

Publication number Publication date Type
WO1991006976A2 (en) 1991-05-16 application

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