WO1991006976A3 - Process for producing an aluminum oxide layer on various substrates - Google Patents

Process for producing an aluminum oxide layer on various substrates Download PDF

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Publication number
WO1991006976A3
WO1991006976A3 PCT/US1990/006391 US9006391W WO9106976A3 WO 1991006976 A3 WO1991006976 A3 WO 1991006976A3 US 9006391 W US9006391 W US 9006391W WO 9106976 A3 WO9106976 A3 WO 9106976A3
Authority
WO
WIPO (PCT)
Prior art keywords
aluminum oxide
producing
arsenide
aluminum
water vapor
Prior art date
Application number
PCT/US1990/006391
Other languages
French (fr)
Other versions
WO1991006976A2 (en
Inventor
Arold K Green
Victor L Rehn
Carey Scwartz
Original Assignee
Us Navy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Us Navy filed Critical Us Navy
Publication of WO1991006976A2 publication Critical patent/WO1991006976A2/en
Publication of WO1991006976A3 publication Critical patent/WO1991006976A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process

Abstract

A process for producing an electrically insulating and protective layer of aluminum oxide on semiconductive, insulating, metallic and superconductive substrates is disclosed, which comprises forming an epitaxial or polycrystalline film of aluminum arsenide on the surface of the substrate, e.g. a gallium arsenide substrate, and exposing the aluminum arsenide coated substrate, e.g. gallium arsenide, to water vapor, e.g. the ambient atmosphere containing water vapor, at a sufficient water vapor pressure and for a period of time sufficient to substantially completely convert the aluminum arsenide to aluminum oxide.
PCT/US1990/006391 1989-11-07 1990-11-06 Process for producing an aluminum oxide layer on various substrates WO1991006976A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43293189A 1989-11-07 1989-11-07
US432,931 1989-11-07

Publications (2)

Publication Number Publication Date
WO1991006976A2 WO1991006976A2 (en) 1991-05-16
WO1991006976A3 true WO1991006976A3 (en) 1991-08-08

Family

ID=23718150

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1990/006391 WO1991006976A2 (en) 1989-11-07 1990-11-06 Process for producing an aluminum oxide layer on various substrates

Country Status (2)

Country Link
AU (1) AU6964591A (en)
WO (1) WO1991006976A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9048314B2 (en) 2005-02-23 2015-06-02 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US9190518B2 (en) 2004-10-25 2015-11-17 Intel Corporation Nonplanar device with thinned lower body portion and method of fabrication
US9224754B2 (en) 2008-06-23 2015-12-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US8183556B2 (en) 2005-12-15 2012-05-22 Intel Corporation Extreme high mobility CMOS logic
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
US7851780B2 (en) 2006-08-02 2010-12-14 Intel Corporation Semiconductor buffer architecture for III-V devices on silicon substrates

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008898A1 (en) * 1978-08-28 1980-03-19 Western Electric Company, Incorporated Method of forming an oxide layer on a group III-V compound
US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008898A1 (en) * 1978-08-28 1980-03-19 Western Electric Company, Incorporated Method of forming an oxide layer on a group III-V compound
US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Journal Vacuum Science & Technology, vol. 20, no. 3, March 1982, American Vacuum Society, J.A. Taylor: "An XPS study of the oxidation of AlAs films grown by MBE", pages 751-755 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190518B2 (en) 2004-10-25 2015-11-17 Intel Corporation Nonplanar device with thinned lower body portion and method of fabrication
US9048314B2 (en) 2005-02-23 2015-06-02 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US9368583B2 (en) 2005-02-23 2016-06-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US9224754B2 (en) 2008-06-23 2015-12-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US9450092B2 (en) 2008-06-23 2016-09-20 Intel Corporation Stress in trigate devices using complimentary gate fill materials

Also Published As

Publication number Publication date
AU6964591A (en) 1991-05-31
WO1991006976A2 (en) 1991-05-16

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