CA1280055C - Dispositif de deposition en phase vapeur - Google Patents

Dispositif de deposition en phase vapeur

Info

Publication number
CA1280055C
CA1280055C CA000520110A CA520110A CA1280055C CA 1280055 C CA1280055 C CA 1280055C CA 000520110 A CA000520110 A CA 000520110A CA 520110 A CA520110 A CA 520110A CA 1280055 C CA1280055 C CA 1280055C
Authority
CA
Canada
Prior art keywords
valves
chamber
aperture
gases
inlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA000520110A
Other languages
English (en)
Inventor
Ronald Edward Enstrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB858526241A external-priority patent/GB8526241D0/en
Priority claimed from US06/802,744 external-priority patent/US4703718A/en
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1280055C publication Critical patent/CA1280055C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
CA000520110A 1985-10-24 1986-10-08 Dispositif de deposition en phase vapeur Expired - Fee Related CA1280055C (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB858526241A GB8526241D0 (en) 1985-10-24 1985-10-24 Inlet chamber for mocvd reactor
GB8526241 1985-10-24
US06/802,744 US4703718A (en) 1985-11-29 1985-11-29 Vapor deposition apparatus and method of using same
US802,744 1985-11-29

Publications (1)

Publication Number Publication Date
CA1280055C true CA1280055C (fr) 1991-02-12

Family

ID=26289926

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000520110A Expired - Fee Related CA1280055C (fr) 1985-10-24 1986-10-08 Dispositif de deposition en phase vapeur

Country Status (2)

Country Link
CA (1) CA1280055C (fr)
GB (1) GB2182061B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2177119B (en) * 1985-06-26 1989-04-26 Plessey Co Plc Organometallic chemical vapour deposition
KR960015375B1 (ko) * 1994-06-08 1996-11-11 현대전자산업 주식회사 강유전체 박막 제조장치 및 그를 사용한 강유전체 박막 제조방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB859688A (en) * 1958-03-11 1961-01-25 Pilkington Brothers Ltd Improvements in or relating to mixing apparatus
US3152932A (en) * 1962-01-29 1964-10-13 Hughes Aircraft Co Reduction in situ of a dipolar molecular gas adhering to a substrate
GB1022477A (en) * 1962-12-14 1966-03-16 Int Rectifier Corp Improvements in or relating to epitaxial deposition of semiconductor devices
US3424661A (en) * 1966-09-01 1969-01-28 Bell Telephone Labor Inc Method of conducting chemical reactions in a glow discharge
US3472689A (en) * 1967-01-19 1969-10-14 Rca Corp Vapor deposition of silicon-nitrogen insulating coatings
US3887726A (en) * 1973-06-29 1975-06-03 Ibm Method of chemical vapor deposition to provide silicon dioxide films with reduced surface state charge on semiconductor substrates
GB1601699A (en) * 1977-11-03 1981-11-04 Gen Eng Radcliffe Method and apparatus for dispersing a liquid additive throughout a plastics material
CA1245109A (fr) * 1983-10-31 1988-11-22 Hsien-Kun Chu Obtention de pellicules d'halogenosilanes polymeriques amorphes; produits qui en sont derives

Also Published As

Publication number Publication date
GB8625410D0 (en) 1986-11-26
GB2182061B (en) 1990-02-21
GB2182061A (en) 1987-05-07

Similar Documents

Publication Publication Date Title
US5735960A (en) Apparatus and method to increase gas residence time in a reactor
KR100514726B1 (ko) 진공처리장치
US4761269A (en) Apparatus for depositing material on a substrate
JP4994551B2 (ja) 薄膜を成長させる、改良された装置および方法
EP0637058B1 (fr) Méthode d'introduire de gaz réactif dans un appareil de traitment de substrats
KR20120028305A (ko) 기판상에 박막을 성장시키는 방법 및 장치
EP3751018A1 (fr) Dispositif de réaction sous vide et procédé de réaction
US4703718A (en) Vapor deposition apparatus and method of using same
US6090206A (en) Throttle valve providing enhanced cleaning
US5225378A (en) Method of forming a phosphorus doped silicon film
JP2668687B2 (ja) C v d 装 置
EP0164928A2 (fr) Réacteur vertical à parois chaudes pour dépôt chimique à partir de la phase vapeur
CA1280055C (fr) Dispositif de deposition en phase vapeur
US6194030B1 (en) Chemical vapor deposition velocity control apparatus
US4895737A (en) Metal-organic chemical vapor deposition
JP2002180253A (ja) グラファイトナノファイバー薄膜形成用熱cvd装置
US5175019A (en) Method for depositing a thin film
JPH02199820A (ja) 気相処理装置
JPH0574717A (ja) 化合物半導体結晶成長方法
JP2002121676A (ja) グラファイトナノファイバー薄膜形成用熱cvd装置
JPH01123413A (ja) 気相成長装置
JP2002121668A (ja) グラファイトナノファイバー薄膜形成用熱cvd装置
JP2002115060A (ja) グラファイトナノファイバー薄膜形成用熱cvd装置
JP2002115072A (ja) グラファイトナノファイバー薄膜形成用熱cvd装置
JPS61284915A (ja) 薄膜気相成長装置

Legal Events

Date Code Title Description
MKLA Lapsed