CA1253608A - Phase-locked semiconductor laser array and a method of making same - Google Patents

Phase-locked semiconductor laser array and a method of making same

Info

Publication number
CA1253608A
CA1253608A CA000456052A CA456052A CA1253608A CA 1253608 A CA1253608 A CA 1253608A CA 000456052 A CA000456052 A CA 000456052A CA 456052 A CA456052 A CA 456052A CA 1253608 A CA1253608 A CA 1253608A
Authority
CA
Canada
Prior art keywords
substrate
layer
solution
channels
planar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000456052A
Other languages
English (en)
French (fr)
Inventor
Dan Botez
John C. Connolly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA1253608A publication Critical patent/CA1253608A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA000456052A 1983-06-17 1984-06-07 Phase-locked semiconductor laser array and a method of making same Expired CA1253608A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50548983A 1983-06-17 1983-06-17
US505,489 1983-06-17

Publications (1)

Publication Number Publication Date
CA1253608A true CA1253608A (en) 1989-05-02

Family

ID=24010518

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000456052A Expired CA1253608A (en) 1983-06-17 1984-06-07 Phase-locked semiconductor laser array and a method of making same

Country Status (5)

Country Link
EP (1) EP0147417A4 (enExample)
JP (1) JPS60501634A (enExample)
CA (1) CA1253608A (enExample)
IT (1) IT1209541B (enExample)
WO (1) WO1985000076A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3486103T2 (de) * 1983-12-01 1993-07-01 Trw Inc Halbleiterlaser.
JPS6167286A (ja) * 1984-09-07 1986-04-07 Sharp Corp 半導体レ−ザアレイ素子
JPS61113293A (ja) * 1984-11-07 1986-05-31 Sharp Corp 半導体レ−ザアレイ装置
JPS61222188A (ja) * 1985-02-28 1986-10-02 Sharp Corp 半導体レ−ザアレイ素子
US4638334A (en) * 1985-04-03 1987-01-20 Xerox Corporation Electro-optic line printer with super luminescent LED source
GB2186115B (en) * 1986-01-31 1989-11-01 Stc Plc Laser array
JPH0232582A (ja) * 1988-07-22 1990-02-02 Oki Electric Ind Co Ltd 集積型半導体レーザとその製造方法
AU2003264786A1 (en) * 2002-09-12 2004-04-30 Avanex Corporation Monolithic optical component

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5346594B2 (enExample) * 1974-02-18 1978-12-14
US4023993A (en) * 1974-08-22 1977-05-17 Xerox Corporation Method of making an electrically pumped solid-state distributed feedback laser
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
GB1570479A (en) * 1978-02-14 1980-07-02 Standard Telephones Cables Ltd Heterostructure laser
JPS5534482A (en) * 1978-09-01 1980-03-11 Nec Corp Manufacturing method for semiconductor laser
US4255717A (en) * 1978-10-30 1981-03-10 Xerox Corporation Monolithic multi-emitting laser device
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
US4317085A (en) * 1979-09-12 1982-02-23 Xerox Corporation Channeled mesa laser
US4347486A (en) * 1979-10-12 1982-08-31 Rca Corporation Single filament semiconductor laser with large emitting area
US4385389A (en) * 1980-07-14 1983-05-24 Rca Corporation Phase-locked CDH-LOC injection laser array
JPS57170584A (en) * 1981-04-15 1982-10-20 Hitachi Ltd Semiconductor laser device
JPS5857771A (ja) * 1981-09-30 1983-04-06 Nec Corp 半導体レ−ザ
US4373989A (en) * 1981-11-30 1983-02-15 Beggs James M Administrator Of Controlled in situ etch-back

Also Published As

Publication number Publication date
IT8421015A0 (it) 1984-05-21
JPS60501634A (ja) 1985-09-26
WO1985000076A1 (en) 1985-01-03
JPH0573075B2 (enExample) 1993-10-13
EP0147417A4 (en) 1987-07-29
IT1209541B (it) 1989-08-30
EP0147417A1 (en) 1985-07-10

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Legal Events

Date Code Title Description
MKEX Expiry
MKEX Expiry

Effective date: 20060502