CA1232974A - High speed diode - Google Patents

High speed diode

Info

Publication number
CA1232974A
CA1232974A CA000424725A CA424725A CA1232974A CA 1232974 A CA1232974 A CA 1232974A CA 000424725 A CA000424725 A CA 000424725A CA 424725 A CA424725 A CA 424725A CA 1232974 A CA1232974 A CA 1232974A
Authority
CA
Canada
Prior art keywords
layer
diode
pnn
thickness
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000424725A
Other languages
English (en)
French (fr)
Inventor
Yoland Collumeau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9272559&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CA1232974(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of CA1232974A publication Critical patent/CA1232974A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Thyristors (AREA)
CA000424725A 1982-03-30 1983-03-29 High speed diode Expired CA1232974A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8205435A FR2524715A1 (fr) 1982-03-30 1982-03-30 Diode rapide
FR8205435 1982-03-30

Publications (1)

Publication Number Publication Date
CA1232974A true CA1232974A (en) 1988-02-16

Family

ID=9272559

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000424725A Expired CA1232974A (en) 1982-03-30 1983-03-29 High speed diode

Country Status (5)

Country Link
EP (1) EP0090722B1 (enrdf_load_stackoverflow)
JP (1) JPS58182277A (enrdf_load_stackoverflow)
CA (1) CA1232974A (enrdf_load_stackoverflow)
DE (1) DE3361323D1 (enrdf_load_stackoverflow)
FR (1) FR2524715A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773858A (en) * 1992-01-17 1998-06-30 Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg. Power diode

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5929469A (ja) * 1982-08-11 1984-02-16 Hitachi Ltd 半導体装置
FR2556882B1 (fr) * 1983-12-14 1986-05-23 Fairchild Camera Instr Co Composant semiconducteur rapide, notamment diode pin haute tension
DE3633161A1 (de) * 1986-09-30 1988-04-07 Licentia Gmbh Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone
FR2638892B1 (fr) * 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
JPH06314801A (ja) * 1993-03-05 1994-11-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4364945B2 (ja) * 1996-10-14 2009-11-18 クリー、インコーポレイテッド バイポーラ半導体素子の製造方法
DE10344609B3 (de) 2003-09-25 2005-07-21 Infineon Technologies Ag Hochfrequenzdiode
JP5135666B2 (ja) * 2005-04-14 2013-02-06 株式会社日立製作所 電力変換装置
JP2007184439A (ja) * 2006-01-10 2007-07-19 Shindengen Electric Mfg Co Ltd 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1576940A (enrdf_load_stackoverflow) * 1968-08-13 1969-08-01
US3553536A (en) * 1968-11-19 1971-01-05 Rca Corp Semiconductor rectifiers having controlled storage and recovery characteristics
US3727116A (en) * 1970-05-05 1973-04-10 Rca Corp Integral thyristor-rectifier device
US3710203A (en) * 1971-11-05 1973-01-09 Fmc Corp High power storage diode
DE2608432C3 (de) * 1976-03-01 1981-07-09 Siemens AG, 1000 Berlin und 8000 München Leistungsdiode
FR2347781A1 (fr) * 1976-04-08 1977-11-04 Alsthom Cgee Thyristor a conduction inverse

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773858A (en) * 1992-01-17 1998-06-30 Eupec Europaeische Gesellschaft Fuer Leistungshalbleiter Mbh & Co. Kg. Power diode

Also Published As

Publication number Publication date
EP0090722B1 (fr) 1985-11-27
JPS58182277A (ja) 1983-10-25
FR2524715B1 (enrdf_load_stackoverflow) 1984-05-18
DE3361323D1 (en) 1986-01-09
FR2524715A1 (fr) 1983-10-07
EP0090722A1 (fr) 1983-10-05

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Legal Events

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