CA1227289A - Methode et appareil de production de faisceaux coniques - Google Patents

Methode et appareil de production de faisceaux coniques

Info

Publication number
CA1227289A
CA1227289A CA000488968A CA488968A CA1227289A CA 1227289 A CA1227289 A CA 1227289A CA 000488968 A CA000488968 A CA 000488968A CA 488968 A CA488968 A CA 488968A CA 1227289 A CA1227289 A CA 1227289A
Authority
CA
Canada
Prior art keywords
section
plasma
gas
chamber
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000488968A
Other languages
English (en)
Inventor
Murray R. Shubaly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atomic Energy of Canada Ltd AECL
Original Assignee
Atomic Energy of Canada Ltd AECL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atomic Energy of Canada Ltd AECL filed Critical Atomic Energy of Canada Ltd AECL
Priority to CA000488968A priority Critical patent/CA1227289A/fr
Application granted granted Critical
Publication of CA1227289A publication Critical patent/CA1227289A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/14—Other arc discharge ion sources using an applied magnetic field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/10—Duoplasmatrons ; Duopigatrons
CA000488968A 1985-08-19 1985-08-19 Methode et appareil de production de faisceaux coniques Expired CA1227289A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000488968A CA1227289A (fr) 1985-08-19 1985-08-19 Methode et appareil de production de faisceaux coniques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000488968A CA1227289A (fr) 1985-08-19 1985-08-19 Methode et appareil de production de faisceaux coniques

Publications (1)

Publication Number Publication Date
CA1227289A true CA1227289A (fr) 1987-09-22

Family

ID=4131201

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000488968A Expired CA1227289A (fr) 1985-08-19 1985-08-19 Methode et appareil de production de faisceaux coniques

Country Status (1)

Country Link
CA (1) CA1227289A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902647A (en) * 1988-10-21 1990-02-20 The United States Of American As Represented By The Administrator Of The National Aeronautics And Space Administration Surface modification using low energy ground state ion beams
WO2008091729A2 (fr) * 2007-01-25 2008-07-31 Varian Semiconductor Equipment Associates, Inc. Technique permettant d'améliorer la performance et de prolonger la durée de vie d'une source d'ions au moyen d'une dilution de gaz
WO2008121549A1 (fr) * 2007-03-29 2008-10-09 Varian Semiconductor Equipment Associates, Inc. Techniques permettant d'améliorer la performance et d'augmenter la durée de vie d'une source d'ions à l'aide d'un mélange de gaz

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902647A (en) * 1988-10-21 1990-02-20 The United States Of American As Represented By The Administrator Of The National Aeronautics And Space Administration Surface modification using low energy ground state ion beams
WO2008091729A2 (fr) * 2007-01-25 2008-07-31 Varian Semiconductor Equipment Associates, Inc. Technique permettant d'améliorer la performance et de prolonger la durée de vie d'une source d'ions au moyen d'une dilution de gaz
WO2008091729A3 (fr) * 2007-01-25 2008-09-18 Varian Semiconductor Equipment Technique permettant d'améliorer la performance et de prolonger la durée de vie d'une source d'ions au moyen d'une dilution de gaz
US7586109B2 (en) 2007-01-25 2009-09-08 Varian Semiconductor Equipment Associates, Inc. Technique for improving the performance and extending the lifetime of an ion source with gas dilution
WO2008121549A1 (fr) * 2007-03-29 2008-10-09 Varian Semiconductor Equipment Associates, Inc. Techniques permettant d'améliorer la performance et d'augmenter la durée de vie d'une source d'ions à l'aide d'un mélange de gaz
US7655931B2 (en) 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing

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