CA1217119A - Method of etching refractory metal film on semiconductor structures - Google Patents

Method of etching refractory metal film on semiconductor structures

Info

Publication number
CA1217119A
CA1217119A CA000456359A CA456359A CA1217119A CA 1217119 A CA1217119 A CA 1217119A CA 000456359 A CA000456359 A CA 000456359A CA 456359 A CA456359 A CA 456359A CA 1217119 A CA1217119 A CA 1217119A
Authority
CA
Canada
Prior art keywords
etching
refractory metal
titanium
mixture
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000456359A
Other languages
English (en)
French (fr)
Inventor
James M. Cleeves
Kenneth J. Radigan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Application granted granted Critical
Publication of CA1217119A publication Critical patent/CA1217119A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • H10P50/667—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
CA000456359A 1983-06-13 1984-06-12 Method of etching refractory metal film on semiconductor structures Expired CA1217119A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US503,976 1983-06-13
US06/503,976 US4443295A (en) 1983-06-13 1983-06-13 Method of etching refractory metal film on semiconductor structures utilizing triethylamine and H2 O2

Publications (1)

Publication Number Publication Date
CA1217119A true CA1217119A (en) 1987-01-27

Family

ID=24004325

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000456359A Expired CA1217119A (en) 1983-06-13 1984-06-12 Method of etching refractory metal film on semiconductor structures

Country Status (5)

Country Link
US (1) US4443295A (enExample)
EP (1) EP0131486B1 (enExample)
JP (1) JPS6064431A (enExample)
CA (1) CA1217119A (enExample)
DE (1) DE3471549D1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3623504A1 (de) * 1986-07-09 1988-01-21 Schering Ag Kupferaetzloesungen
US4749640A (en) * 1986-09-02 1988-06-07 Monsanto Company Integrated circuit manufacturing process
NL8701184A (nl) * 1987-05-18 1988-12-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4787958A (en) * 1987-08-28 1988-11-29 Motorola Inc. Method of chemically etching TiW and/or TiWN
JP4075228B2 (ja) * 1998-09-09 2008-04-16 株式会社デンソー 半導体装置の製造方法
JP3627617B2 (ja) 2000-04-06 2005-03-09 株式会社デンソー 高融点金属の加工方法及びこの金属を用いた半導体装置の製造方法
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
KR100648247B1 (ko) * 2004-06-07 2006-11-24 삼성전자주식회사 캐패시터의 금속 하부전극 형성 방법 및 이를 위한선택적인 금속막 식각 방법
US20070049017A1 (en) * 2005-08-29 2007-03-01 Chao-Ching Hsieh Plug fabricating method for dielectric layer
KR101444468B1 (ko) 2005-10-05 2014-10-30 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 에칭후 잔류물을 제거하기 위한 산화성 수성 세정제
US8258041B2 (en) 2010-06-15 2012-09-04 Texas Instruments Incorporated Method of fabricating metal-bearing integrated circuit structures having low defect density
US20140209466A1 (en) * 2013-01-31 2014-07-31 Wyatt Technology Corporation Corrosion resistant electrodes for electrophoretic mobility measurements and method for their fabrication
JP6088999B2 (ja) * 2013-05-02 2017-03-01 富士フイルム株式会社 エッチング液およびエッチング液のキット、これをもちいたエッチング方法および半導体基板製品の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3529350A (en) * 1968-12-09 1970-09-22 Gen Electric Thin film resistor-conductor system employing beta-tungsten resistor films
US3669776A (en) * 1969-03-26 1972-06-13 M & T Chemicals Inc Novel nickel etch process
US3737306A (en) * 1971-07-07 1973-06-05 Crucible Inc Method for treating titanium scrap
US3772104A (en) * 1972-03-30 1973-11-13 Bell Telephone Labor Inc Fabrication of thin film devices
US3944496A (en) * 1973-04-30 1976-03-16 Coggins Dolphus L Composition for chemical milling refractory metals
US3841931A (en) * 1973-07-23 1974-10-15 Bell Telephone Labor Inc Mild acid etch for tungsten
JPS55138235A (en) * 1979-04-13 1980-10-28 Toshiba Corp Manufacture of titanic etching solution and semiconductor device using this etching solution
US4267012A (en) * 1979-04-30 1981-05-12 Fairchild Camera & Instrument Corp. Process for patterning metal connections on a semiconductor structure by using a tungsten-titanium etch resistant layer

Also Published As

Publication number Publication date
JPS6064431A (ja) 1985-04-13
EP0131486A1 (en) 1985-01-16
DE3471549D1 (en) 1988-06-30
JPH0471335B2 (enExample) 1992-11-13
EP0131486B1 (en) 1988-05-25
US4443295A (en) 1984-04-17

Similar Documents

Publication Publication Date Title
CA1217119A (en) Method of etching refractory metal film on semiconductor structures
US4389257A (en) Fabrication method for high conductivity, void-free polysilicon-silicide integrated circuit electrodes
US4470189A (en) Process for making polycide structures
US4992135A (en) Method of etching back of tungsten layers on semiconductor wafers, and solution therefore
US4214946A (en) Selective reactive ion etching of polysilicon against SiO2 utilizing SF6 -Cl2 -inert gas etchant
JP3404057B2 (ja) 電子デバイスの製造方法
US4267012A (en) Process for patterning metal connections on a semiconductor structure by using a tungsten-titanium etch resistant layer
US4957590A (en) Method for forming local interconnects using selective anisotropy
US5658425A (en) Method of etching contact openings with reduced removal rate of underlying electrically conductive titanium silicide layer
US4230522A (en) PNAF Etchant for aluminum and silicon
WO2020112237A1 (en) Methods of patterning metal layers
US5003375A (en) MIS type semiconductor integrated circuit device having a refractory metal gate electrode and refractory metal silicide film covering the gate electrode
North et al. Tapered windows in phosphorus-doped SiO 2 by ion implantation
KR930002673B1 (ko) 고융점금속 성장방법
EP0162950B1 (en) Method for diffusing a conductivity determining impurity in a semiconductor substrate and making electrical contact thereto
US4836888A (en) Method of chemically etching semiconductor substrate
KR20180105827A (ko) 도전막 식각액 조성물 및 이를 이용한 반도체 소자의 제조 방법
Ohdomari et al. Low temperature doping of arsenic atoms in silicon during Pd2Si formation
Simpson et al. Planarization Processes and Applications: I. Undoped GeO2‐SiO2 Glasses
EP0104079A2 (en) Integrated circuit contact structure
US6124190A (en) Method of manufacturing semiconductor device with silicide layer without short circuit
US6753262B2 (en) Methods of etching insulative materials, of forming electrical devices, and of forming capacitors
US4452881A (en) Method of adjusting the edge angle in polysilicon
WO1990013912A1 (fr) Pellicule d'oxyde de silicium et semi-conducteur pourvu de cette pellicule
Holloway et al. Chemical reactions at metal/compound semiconductor interfaces: Au and GaAs

Legal Events

Date Code Title Description
MKEX Expiry