CA1215480A - Method of manufacturing a high-voltage bipolar transistor - Google Patents
Method of manufacturing a high-voltage bipolar transistorInfo
- Publication number
- CA1215480A CA1215480A CA000450844A CA450844A CA1215480A CA 1215480 A CA1215480 A CA 1215480A CA 000450844 A CA000450844 A CA 000450844A CA 450844 A CA450844 A CA 450844A CA 1215480 A CA1215480 A CA 1215480A
- Authority
- CA
- Canada
- Prior art keywords
- epitaxial layer
- layer
- separation walls
- isolating
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 238000000926 separation method Methods 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 6
- 230000015556 catabolic process Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 72
- 238000005530 etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052729 chemical element Inorganic materials 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002633 protecting effect Effects 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/40—Vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8305246A FR2543739B1 (fr) | 1983-03-30 | 1983-03-30 | Procede de realisation d'un transistor bipolaire haute tension |
| FR8305246 | 1983-03-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1215480A true CA1215480A (en) | 1986-12-16 |
Family
ID=9287390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000450844A Expired CA1215480A (en) | 1983-03-30 | 1984-03-29 | Method of manufacturing a high-voltage bipolar transistor |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0126499B1 (enrdf_load_stackoverflow) |
| JP (1) | JPS59182565A (enrdf_load_stackoverflow) |
| CA (1) | CA1215480A (enrdf_load_stackoverflow) |
| DE (1) | DE3468781D1 (enrdf_load_stackoverflow) |
| FR (1) | FR2543739B1 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8500218A (nl) * | 1985-01-28 | 1986-08-18 | Philips Nv | Halfgeleiderinrichting met tweedimensionaal ladingsdragergas. |
| US5023194A (en) * | 1988-02-11 | 1991-06-11 | Exar Corporation | Method of making a multicollector vertical pnp transistor |
| DE69331052T2 (de) * | 1993-07-01 | 2002-06-06 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Integrierte Randstruktur für Hochspannung-Halbleiteranordnungen und dazugehöriger Herstellungsprozess |
| GB0119215D0 (en) | 2001-08-07 | 2001-09-26 | Koninkl Philips Electronics Nv | Trench bipolar transistor |
| JP2003078032A (ja) * | 2001-09-05 | 2003-03-14 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50278B1 (enrdf_load_stackoverflow) * | 1970-07-16 | 1975-01-07 | ||
| JPS5724659B2 (enrdf_load_stackoverflow) * | 1974-10-31 | 1982-05-25 | ||
| JPS5247319A (en) * | 1975-10-13 | 1977-04-15 | Victor Co Of Japan Ltd | Recording/reproducing system of color video signal |
| JPS59978B2 (ja) * | 1976-04-22 | 1984-01-10 | ソニー株式会社 | 半導体集積回路の製造方法 |
| CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
| JPS55132068A (en) * | 1979-03-30 | 1980-10-14 | Ibm | Pnp bipolar transistor |
| DE3215652A1 (de) * | 1982-04-27 | 1983-10-27 | Siemens AG, 1000 Berlin und 8000 München | Integrierbarer bipolarer transistor |
-
1983
- 1983-03-30 FR FR8305246A patent/FR2543739B1/fr not_active Expired
-
1984
- 1984-03-26 DE DE8484200427T patent/DE3468781D1/de not_active Expired
- 1984-03-26 EP EP84200427A patent/EP0126499B1/fr not_active Expired
- 1984-03-27 JP JP59057483A patent/JPS59182565A/ja active Granted
- 1984-03-29 CA CA000450844A patent/CA1215480A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59182565A (ja) | 1984-10-17 |
| FR2543739A1 (fr) | 1984-10-05 |
| JPH0523054B2 (enrdf_load_stackoverflow) | 1993-03-31 |
| EP0126499B1 (fr) | 1988-01-13 |
| FR2543739B1 (fr) | 1986-04-18 |
| EP0126499A1 (fr) | 1984-11-28 |
| DE3468781D1 (en) | 1988-02-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |