CA1184478A - Hydrogen etching of semiconductors and oxides - Google Patents

Hydrogen etching of semiconductors and oxides

Info

Publication number
CA1184478A
CA1184478A CA000396769A CA396769A CA1184478A CA 1184478 A CA1184478 A CA 1184478A CA 000396769 A CA000396769 A CA 000396769A CA 396769 A CA396769 A CA 396769A CA 1184478 A CA1184478 A CA 1184478A
Authority
CA
Canada
Prior art keywords
etching
silicon
hydrogen
oxide
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000396769A
Other languages
English (en)
French (fr)
Inventor
Robert P.H. Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1184478A publication Critical patent/CA1184478A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Drying Of Semiconductors (AREA)
CA000396769A 1981-03-13 1982-02-22 Hydrogen etching of semiconductors and oxides Expired CA1184478A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/243,622 US4361461A (en) 1981-03-13 1981-03-13 Hydrogen etching of semiconductors and oxides
US243,622 1981-03-13

Publications (1)

Publication Number Publication Date
CA1184478A true CA1184478A (en) 1985-03-26

Family

ID=22919476

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000396769A Expired CA1184478A (en) 1981-03-13 1982-02-22 Hydrogen etching of semiconductors and oxides

Country Status (7)

Country Link
US (1) US4361461A (https=)
JP (1) JPS57162338A (https=)
CA (1) CA1184478A (https=)
DE (1) DE3209066A1 (https=)
FR (1) FR2501909B1 (https=)
GB (1) GB2094720B (https=)
NL (1) NL8201041A (https=)

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US4778562A (en) * 1984-08-13 1988-10-18 General Motors Corporation Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
US4544444A (en) * 1984-08-15 1985-10-01 General Motors Corporation Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
FR2571542B1 (fr) * 1984-10-09 1987-01-23 Labo Electronique Physique Procede de realisation d'un dispositif semiconducteur incluant l'action de plasma
JP2533078B2 (ja) * 1984-11-27 1996-09-11 ソニー株式会社 不純物拡散方法
US4590091A (en) * 1984-12-17 1986-05-20 Hughes Aircraft Company Photochemical process for substrate surface preparation
US4778776A (en) * 1985-06-27 1988-10-18 General Electric Company Passivation with a low oxygen interface
US4731158A (en) * 1986-09-12 1988-03-15 International Business Machines Corporation High rate laser etching technique
JPS63161618A (ja) * 1986-12-25 1988-07-05 Nec Corp エツチング方法
JPS63161619A (ja) * 1986-12-25 1988-07-05 Nec Corp エツチング方法
GB8806800D0 (en) * 1988-03-22 1988-04-20 British Telecomm Etching methods
JPH01319944A (ja) * 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
US5145554A (en) * 1989-02-23 1992-09-08 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US5133830A (en) * 1989-04-07 1992-07-28 Seiko Epson Corporation Method of pretreatment and anisotropic dry etching of thin film semiconductors
US5236537A (en) * 1989-04-07 1993-08-17 Seiko Epson Corporation Plasma etching apparatus
US5194119A (en) * 1989-05-15 1993-03-16 Seiko Epson Corporation Method of anisotropic dry etching of thin film semiconductors
US4992134A (en) * 1989-11-14 1991-02-12 Advanced Micro Devices, Inc. Dopant-independent polysilicon plasma etch
US4981811A (en) * 1990-04-12 1991-01-01 At&T Bell Laboratories Process for fabricating low defect polysilicon
DE69133169D1 (de) * 1990-05-09 2003-01-16 Canon Kk Verfahren zur Erzeugung einer Struktur und Verfahren zum Vorbereiten einer halbleitenden Anordnung mit Hilfe dieses Verfahrens
JPH0719777B2 (ja) * 1990-08-10 1995-03-06 株式会社半導体プロセス研究所 半導体装置の製造方法
US5824455A (en) * 1990-09-26 1998-10-20 Canon Kabushiki Kaisha Processing method and apparatus
EP0908782A1 (en) * 1990-09-26 1999-04-14 Canon Kabushiki Kaisha Photolithographic processing method
US5286340A (en) * 1991-09-13 1994-02-15 University Of Pittsburgh Of The Commonwealth System Of Higher Education Process for controlling silicon etching by atomic hydrogen
JP2830666B2 (ja) * 1991-11-29 1998-12-02 日本電気株式会社 半導体に発光層を作製する方法
JP2708992B2 (ja) * 1991-12-20 1998-02-04 シャープ株式会社 ＡｌＧａＩｎＰ系半導体発光装置の製造方法
JPH05343374A (ja) * 1992-06-05 1993-12-24 Hitachi Ltd 化合物半導体の加工方法及び加工装置
EP0572704B1 (en) * 1992-06-05 2000-04-19 Semiconductor Process Laboratory Co., Ltd. Method for manufacturing a semiconductor device including method of reforming an insulating film formed by low temperature CVD
JP2765622B2 (ja) * 1995-08-23 1998-06-18 日本電気株式会社 選択シリコンエピタキシャル膜の成長方法
US6379576B2 (en) 1997-11-17 2002-04-30 Mattson Technology, Inc. Systems and methods for variable mode plasma enhanced processing of semiconductor wafers
US6413874B1 (en) * 1997-12-26 2002-07-02 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
US7067440B1 (en) 2001-08-24 2006-06-27 Novellus Systems, Inc. Gap fill for high aspect ratio structures
US6794290B1 (en) * 2001-12-03 2004-09-21 Novellus Systems, Inc. Method of chemical modification of structure topography
US7122485B1 (en) 2002-12-09 2006-10-17 Novellus Systems, Inc. Deposition profile modification through process chemistry
US7078312B1 (en) 2003-09-02 2006-07-18 Novellus Systems, Inc. Method for controlling etch process repeatability
US7344996B1 (en) 2005-06-22 2008-03-18 Novellus Systems, Inc. Helium-based etch process in deposition-etch-deposition gap fill
US7476621B1 (en) 2003-12-10 2009-01-13 Novellus Systems, Inc. Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
US7163896B1 (en) 2003-12-10 2007-01-16 Novellus Systems, Inc. Biased H2 etch process in deposition-etch-deposition gap fill
US7217658B1 (en) 2004-09-07 2007-05-15 Novellus Systems, Inc. Process modulation to prevent structure erosion during gap fill
US7176039B1 (en) 2004-09-21 2007-02-13 Novellus Systems, Inc. Dynamic modification of gap fill process characteristics
US7381451B1 (en) 2004-11-17 2008-06-03 Novellus Systems, Inc. Strain engineering—HDP thin film with tensile stress for FEOL and other applications
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US7750326B2 (en) * 2005-06-13 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and cleaning method therefor
US20070243713A1 (en) * 2006-04-12 2007-10-18 Lam Research Corporation Apparatus and method for generating activated hydrogen for plasma stripping
US7482245B1 (en) 2006-06-20 2009-01-27 Novellus Systems, Inc. Stress profile modulation in STI gap fill
US7789965B2 (en) 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US7935634B2 (en) * 2007-08-16 2011-05-03 Qimonda Ag Integrated circuits, micromechanical devices, and method of making same
US9732906B2 (en) * 2007-09-18 2017-08-15 Paul H. Smith, Jr. Hydrogen energy systems
US7871937B2 (en) 2008-05-16 2011-01-18 Asm America, Inc. Process and apparatus for treating wafers
US8133797B2 (en) 2008-05-16 2012-03-13 Novellus Systems, Inc. Protective layer to enable damage free gap fill
US20140273525A1 (en) * 2013-03-13 2014-09-18 Intermolecular, Inc. Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films
KR102094471B1 (ko) * 2013-10-07 2020-03-27 삼성전자주식회사 질화물 반도체층의 성장방법 및 이에 의하여 형성된 질화물 반도체
US9299557B2 (en) 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
US9474163B2 (en) 2014-12-30 2016-10-18 Asm Ip Holding B.V. Germanium oxide pre-clean module and process
US10373850B2 (en) 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
US10354887B2 (en) * 2017-09-27 2019-07-16 Lam Research Corporation Atomic layer etching of metal oxide
US10684407B2 (en) * 2017-10-30 2020-06-16 Facebook Technologies, Llc Reactivity enhancement in ion beam etcher
WO2021044443A1 (en) * 2019-09-04 2021-03-11 Indian Institute Of Science In-situ etching process

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GB1417085A (en) * 1973-05-17 1975-12-10 Standard Telephones Cables Ltd Plasma etching
US4069096A (en) * 1975-11-03 1978-01-17 Texas Instruments Incorporated Silicon etching process
US4227975A (en) * 1979-01-29 1980-10-14 Bell Telephone Laboratories, Incorporated Selective plasma etching of dielectric masks in the presence of native oxides of group III-V compound semiconductors
JPS5845174B2 (ja) * 1979-03-05 1983-10-07 日本電信電話株式会社 ３↓−５族化合物半導体上の絶縁膜形成方法
US4266986A (en) * 1979-11-29 1981-05-12 Bell Telephone Laboratories, Incorporated Passivation of defects in laser annealed semiconductors
US4285762A (en) * 1979-12-31 1981-08-25 Exxon Research & Engineering Co. Plasma etching of amorphous silicon (SE-35)
US4285763A (en) * 1980-01-29 1981-08-25 Bell Telephone Laboratories, Incorporated Reactive ion etching of III-V semiconductor compounds
US4284689A (en) * 1980-04-07 1981-08-18 Bell Telephone Laboratories, Incorporated Light-absorbing materials
JPS57136705A (en) * 1981-02-18 1982-08-23 Matsushita Electric Industrial Co Ltd Method of finely forming thin stannic oxide film

Also Published As

Publication number Publication date
GB2094720A (en) 1982-09-22
FR2501909A1 (fr) 1982-09-17
JPS57162338A (en) 1982-10-06
US4361461A (en) 1982-11-30
GB2094720B (en) 1984-07-18
DE3209066A1 (de) 1982-11-11
FR2501909B1 (fr) 1985-06-21
DE3209066C2 (https=) 1989-08-03
NL8201041A (nl) 1982-10-01

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