CA1164734A - Methode de deposition d'un enduit antireflechissement a la surface d'une pile solaire - Google Patents
Methode de deposition d'un enduit antireflechissement a la surface d'une pile solaireInfo
- Publication number
- CA1164734A CA1164734A CA000375170A CA375170A CA1164734A CA 1164734 A CA1164734 A CA 1164734A CA 000375170 A CA000375170 A CA 000375170A CA 375170 A CA375170 A CA 375170A CA 1164734 A CA1164734 A CA 1164734A
- Authority
- CA
- Canada
- Prior art keywords
- coating
- layer
- cell
- solar cell
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 45
- 239000011248 coating agent Substances 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 25
- 238000007747 plating Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 8
- 210000004027 cell Anatomy 0.000 claims description 82
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 11
- 230000000873 masking effect Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- 239000010426 asphalt Substances 0.000 claims description 4
- 239000005456 alcohol based solvent Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 claims description 2
- 238000007772 electroless plating Methods 0.000 claims description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 2
- 238000012216 screening Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 230000001235 sensitizing effect Effects 0.000 claims 1
- SDVHRXOTTYYKRY-UHFFFAOYSA-J tetrasodium;dioxido-oxo-phosphonato-$l^{5}-phosphane Chemical compound [Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)P([O-])([O-])=O SDVHRXOTTYYKRY-UHFFFAOYSA-J 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000000243 solution Substances 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 6
- 229960002050 hydrofluoric acid Drugs 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000009718 spray deposition Methods 0.000 description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- GHXZTYHSJHQHIJ-UHFFFAOYSA-N Chlorhexidine Chemical compound C=1C=C(Cl)C=CC=1NC(N)=NC(N)=NCCCCCCN=C(N)N=C(N)NC1=CC=C(Cl)C=C1 GHXZTYHSJHQHIJ-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-RNFDNDRNSA-N Magnesium-28 Chemical compound [28Mg] FYYHWMGAXLPEAU-RNFDNDRNSA-N 0.000 description 1
- 101100011511 Mus musculus Elovl6 gene Proteins 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical class O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000008366 buffered solution Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- IZLAVFWQHMDDGK-UHFFFAOYSA-N gold(1+);cyanide Chemical compound [Au+].N#[C-] IZLAVFWQHMDDGK-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007737 ion beam deposition Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229940052586 pro 12 Drugs 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- QGMRQYFBGABWDR-UHFFFAOYSA-N sodium;5-ethyl-5-pentan-2-yl-1,3-diazinane-2,4,6-trione Chemical compound [Na+].CCCC(C)C1(CC)C(=O)NC(=O)NC1=O QGMRQYFBGABWDR-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002311 subsequent effect Effects 0.000 description 1
- 230000003319 supportive effect Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16741780A | 1980-07-11 | 1980-07-11 | |
| US167,417 | 1980-07-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1164734A true CA1164734A (fr) | 1984-04-03 |
Family
ID=22607301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000375170A Expired CA1164734A (fr) | 1980-07-11 | 1981-04-10 | Methode de deposition d'un enduit antireflechissement a la surface d'une pile solaire |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5749279A (fr) |
| AU (1) | AU542589B2 (fr) |
| BE (1) | BE889579A (fr) |
| CA (1) | CA1164734A (fr) |
| DE (1) | DE3127156A1 (fr) |
| ES (1) | ES503827A0 (fr) |
| FR (1) | FR2486718B1 (fr) |
| GB (1) | GB2079537B (fr) |
| IT (1) | IT1137610B (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3242791A1 (de) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von elektrische kontakte bildende fingerelektrodenstrukturen an amorphen silizium-solarzellen |
| SE8306663L (sv) * | 1982-12-08 | 1984-06-09 | Int Rectifier Corp | Forfarande for framstellning av halvledaranordning |
| US4594311A (en) * | 1984-10-29 | 1986-06-10 | Kollmorgen Technologies Corporation | Process for the photoselective metallization on non-conductive plastic base materials |
| US4692349A (en) * | 1986-03-03 | 1987-09-08 | American Telephone And Telegraph Company, At&T Bell Laboratories | Selective electroless plating of vias in VLSI devices |
| EP0325606B1 (fr) * | 1987-07-07 | 1994-09-07 | Mobil Solar Energy Corporation | Procede de fabrication de cellules solaires a couches anti-reflets |
| JPH02137482A (ja) * | 1988-11-18 | 1990-05-25 | Canon Inc | カメラシステム |
| US5428249A (en) * | 1992-07-15 | 1995-06-27 | Canon Kabushiki Kaisha | Photovoltaic device with improved collector electrode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5120277B2 (fr) * | 1972-08-17 | 1976-06-23 | ||
| US4171989A (en) * | 1976-01-27 | 1979-10-23 | Motorola, Inc. | Contact for solar cells |
| US4241108A (en) * | 1978-10-10 | 1980-12-23 | Rca Corporation | Sprayable titanium composition |
-
1981
- 1981-04-10 CA CA000375170A patent/CA1164734A/fr not_active Expired
- 1981-07-08 GB GB8121103A patent/GB2079537B/en not_active Expired
- 1981-07-09 DE DE19813127156 patent/DE3127156A1/de not_active Withdrawn
- 1981-07-10 ES ES503827A patent/ES503827A0/es active Granted
- 1981-07-10 BE BE0/205370A patent/BE889579A/fr not_active IP Right Cessation
- 1981-07-10 AU AU72754/81A patent/AU542589B2/en not_active Ceased
- 1981-07-10 FR FR8113692A patent/FR2486718B1/fr not_active Expired
- 1981-07-10 IT IT22882/81A patent/IT1137610B/it active
- 1981-07-11 JP JP56107612A patent/JPS5749279A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1137610B (it) | 1986-09-10 |
| ES8301556A1 (es) | 1982-12-01 |
| AU542589B2 (en) | 1985-02-28 |
| IT8122882A0 (it) | 1981-07-10 |
| ES503827A0 (es) | 1982-12-01 |
| FR2486718B1 (fr) | 1986-09-12 |
| BE889579A (fr) | 1982-01-11 |
| GB2079537B (en) | 1984-07-11 |
| JPS5749279A (en) | 1982-03-23 |
| FR2486718A1 (fr) | 1982-01-15 |
| DE3127156A1 (de) | 1982-03-04 |
| GB2079537A (en) | 1982-01-20 |
| AU7275481A (en) | 1982-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4359487A (en) | Method for applying an anti-reflection coating to a solar cell | |
| US4451969A (en) | Method of fabricating solar cells | |
| US4751191A (en) | Method of fabricating solar cells with silicon nitride coating | |
| JP3722326B2 (ja) | 太陽電池の製造方法 | |
| US4361950A (en) | Method of making solar cell with wrap-around electrode | |
| EP0531430B1 (fr) | Procede de fabrication de composants semi-conducteurs et cellule solaire produite au moyen desdits composants | |
| US4612698A (en) | Method of fabricating solar cells | |
| US4078945A (en) | Anti-reflective coating for silicon solar cells | |
| JPS61100979A (ja) | 薄膜太陽電池の製造方法 | |
| JPH0572114B2 (fr) | ||
| JP2000183379A (ja) | 太陽電池の製造方法 | |
| CA1164734A (fr) | Methode de deposition d'un enduit antireflechissement a la surface d'une pile solaire | |
| JPH07135333A (ja) | 太陽電池の製造方法 | |
| US4691077A (en) | Antireflection coatings for silicon solar cells | |
| AU609424B2 (en) | Manufacture of solar cells with anti-reflection coating | |
| JP2989373B2 (ja) | 光電変換装置の製造方法 | |
| US4387116A (en) | Conditioner for adherence of nickel to a tin oxide surface | |
| JP4486622B2 (ja) | 太陽電池の製造方法 | |
| JP2005167291A (ja) | 太陽電池の製造方法及び半導体装置の製造方法 | |
| JPH07326784A (ja) | 太陽電池素子の製造方法 | |
| EP0008236B1 (fr) | Procédé de formation de dispositifs à hétérojonction oxyde d'étain semiconducteur | |
| JP2000049368A (ja) | 太陽電池素子の製造方法 | |
| JPS59178778A (ja) | 太陽電池及びその製造方法 | |
| AU574431B2 (en) | Proton milling as a form of plating mask | |
| JPH0233980A (ja) | 太陽電池の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |