CA1162283A - Semiconductor devices having improved low-resistance contacts to p-type cdte, and method of preparation - Google Patents
Semiconductor devices having improved low-resistance contacts to p-type cdte, and method of preparationInfo
- Publication number
- CA1162283A CA1162283A CA000361703A CA361703A CA1162283A CA 1162283 A CA1162283 A CA 1162283A CA 000361703 A CA000361703 A CA 000361703A CA 361703 A CA361703 A CA 361703A CA 1162283 A CA1162283 A CA 1162283A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- cdte
- tellurium
- contact
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 24
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 17
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical group [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000002950 deficient Effects 0.000 claims abstract description 9
- 229940074389 tellurium Drugs 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000010409 thin film Substances 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000011133 lead Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- 235000011007 phosphoric acid Nutrition 0.000 claims 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910001020 Au alloy Inorganic materials 0.000 claims 1
- 229910000599 Cr alloy Inorganic materials 0.000 claims 1
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 229910000978 Pb alloy Inorganic materials 0.000 claims 1
- 229910001128 Sn alloy Inorganic materials 0.000 claims 1
- 229910001069 Ti alloy Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229920000136 polysorbate Polymers 0.000 claims 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 claims 1
- 150000002739 metals Chemical class 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- ORMNPSYMZOGSSV-UHFFFAOYSA-N dinitrooxymercury Chemical compound [Hg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ORMNPSYMZOGSSV-UHFFFAOYSA-N 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 244000228957 Ferula foetida Species 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QXAITBQSYVNQDR-UHFFFAOYSA-N amitraz Chemical compound C=1C=C(C)C=C(C)C=1N=CN(C)C=NC1=CC=C(C)C=C1C QXAITBQSYVNQDR-UHFFFAOYSA-N 0.000 description 1
- 238000009924 canning Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 238000000103 photoluminescence spectrum Methods 0.000 description 1
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- -1 ~luminum Chemical compound 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
- H10D62/8603—Binary Group II-VI materials wherein cadmium is the Group II element, e.g. CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/172,049 US4319069A (en) | 1980-07-25 | 1980-07-25 | Semiconductor devices having improved low-resistance contacts to p-type CdTe, and method of preparation |
| US172,049 | 1980-07-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1162283A true CA1162283A (en) | 1984-02-14 |
Family
ID=22626155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000361703A Expired CA1162283A (en) | 1980-07-25 | 1980-10-07 | Semiconductor devices having improved low-resistance contacts to p-type cdte, and method of preparation |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4319069A (en, 2012) |
| EP (1) | EP0045195B1 (en, 2012) |
| JP (1) | JPS5753985A (en, 2012) |
| AU (1) | AU548678B2 (en, 2012) |
| CA (1) | CA1162283A (en, 2012) |
| DE (1) | DE3172136D1 (en, 2012) |
| IL (1) | IL63411A (en, 2012) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2544131B1 (fr) * | 1983-04-08 | 1985-07-05 | Telecommunications Sa | Detecteur photovoltaique en immersion optique |
| US4456630A (en) * | 1983-08-18 | 1984-06-26 | Monosolar, Inc. | Method of forming ohmic contacts |
| US4568792A (en) * | 1984-02-02 | 1986-02-04 | Sri International | Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts |
| US4697202A (en) * | 1984-02-02 | 1987-09-29 | Sri International | Integrated circuit having dislocation free substrate |
| US4548681A (en) * | 1984-02-03 | 1985-10-22 | The Standard Oil Company (Ohio) | Electrodeposition of thin film heterojunction photovoltaic devices that utilize Cd rich Hg1-x Cdx Te |
| US4680611A (en) * | 1984-12-28 | 1987-07-14 | Sohio Commercial Development Co. | Multilayer ohmic contact for p-type semiconductor and method of making same |
| US4735662A (en) * | 1987-01-06 | 1988-04-05 | The Standard Oil Company | Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors |
| FR2614135B1 (fr) * | 1987-04-14 | 1989-06-30 | Telecommunications Sa | Photodiode hgcdte a reponse rapide |
| US6265731B1 (en) * | 1992-06-03 | 2001-07-24 | Raytheon Company | Ohmic contacts for p-type wide bandgap II-VI semiconductor materials |
| US5909632A (en) * | 1997-09-25 | 1999-06-01 | Midwest Research Institute | Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films |
| US6281035B1 (en) | 1997-09-25 | 2001-08-28 | Midwest Research Institute | Ion-beam treatment to prepare surfaces of p-CdTe films |
| US6576547B2 (en) * | 1998-03-05 | 2003-06-10 | Micron Technology, Inc. | Residue-free contact openings and methods for fabricating same |
| US6423565B1 (en) | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
| US20110117696A1 (en) * | 2009-11-19 | 2011-05-19 | Air Liquide Electronics U.S. Lp | CdTe SURFACE TREATMENT FOR STABLE BACK CONTACTS |
| US8524524B2 (en) * | 2010-04-22 | 2013-09-03 | General Electric Company | Methods for forming back contact electrodes for cadmium telluride photovoltaic cells |
| CN104114362B (zh) * | 2012-02-15 | 2016-09-28 | 柯尼卡美能达株式会社 | 功能性膜及其制造方法、以及含有所述功能性膜的电子器件 |
| US9276157B2 (en) * | 2012-08-31 | 2016-03-01 | First Solar, Inc. | Methods of treating a semiconductor layer |
| US9231134B2 (en) | 2012-08-31 | 2016-01-05 | First Solar, Inc. | Photovoltaic devices |
| EP2969273A4 (en) | 2013-03-15 | 2016-10-12 | First Solar Inc | METHOD FOR PRODUCING A PHOTOVOLTAIC MODULE |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3480473A (en) * | 1966-06-24 | 1969-11-25 | Kewanee Oil Co | Method of producing polycrystalline photovoltaic cells |
| FR1594268A (en, 2012) * | 1968-12-10 | 1970-06-01 | ||
| JPS4936792B1 (en, 2012) * | 1970-10-15 | 1974-10-03 | ||
| NL7015375A (en, 2012) * | 1970-10-21 | 1972-04-25 | ||
| DE2137280C2 (de) * | 1971-07-26 | 1975-04-17 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Anwendung eines Verfahrens zum Xtzen einer Schicht aus Aluminium |
| JPS5040832A (en, 2012) * | 1973-08-16 | 1975-04-14 | ||
| US3993533A (en) * | 1975-04-09 | 1976-11-23 | Carnegie-Mellon University | Method for making semiconductors for solar cells |
| US4207119A (en) * | 1978-06-02 | 1980-06-10 | Eastman Kodak Company | Polycrystalline thin film CdS/CdTe photovoltaic cell |
| US4260427A (en) * | 1979-06-18 | 1981-04-07 | Ametek, Inc. | CdTe Schottky barrier photovoltaic cell |
-
1980
- 1980-07-25 US US06/172,049 patent/US4319069A/en not_active Expired - Lifetime
- 1980-10-07 CA CA000361703A patent/CA1162283A/en not_active Expired
-
1981
- 1981-07-24 AU AU73410/81A patent/AU548678B2/en not_active Ceased
- 1981-07-24 DE DE8181303406T patent/DE3172136D1/de not_active Expired
- 1981-07-24 EP EP81303406A patent/EP0045195B1/en not_active Expired
- 1981-07-24 JP JP56115425A patent/JPS5753985A/ja active Pending
- 1981-07-24 IL IL63411A patent/IL63411A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AU548678B2 (en) | 1986-01-02 |
| EP0045195A3 (en) | 1982-02-10 |
| IL63411A (en) | 1985-04-30 |
| DE3172136D1 (en) | 1985-10-10 |
| IL63411A0 (en) | 1981-10-30 |
| AU7341081A (en) | 1982-01-28 |
| EP0045195A2 (en) | 1982-02-03 |
| US4319069A (en) | 1982-03-09 |
| JPS5753985A (en, 2012) | 1982-03-31 |
| EP0045195B1 (en) | 1985-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1162283A (en) | Semiconductor devices having improved low-resistance contacts to p-type cdte, and method of preparation | |
| Niles et al. | A photoemission determination of the band diagram of the Te/CdTe interface | |
| KR100355822B1 (ko) | 반도체 박막 및 그 제조 방법과 이를 사용한 태양 전지 | |
| CN102237445B (zh) | 形成碲化镉光伏电池的背接触电极的方法 | |
| US4445965A (en) | Method for making thin film cadmium telluride and related semiconductors for solar cells | |
| JP2742416B2 (ja) | Ｐ型のテルル含有▲ｉｉ▼−▲ｖｉ▼半導体の薄いフィルムに対する安定オーミック接点 | |
| US6262359B1 (en) | Aluminum alloy back junction solar cell and a process for fabrication thereof | |
| Janik et al. | Ohmic contacts to p-type cadmium telluride and cadmium mercury telluride | |
| US4595790A (en) | Method of making current collector grid and materials therefor | |
| Tyan | Topics on thin film CdS/CdTe solar cells | |
| KR20010012327A (ko) | 실리콘 솔라셀 및 다른 실리콘 소자용 음전극 및 양전극을자체 도핑하기 위한 방법 및 장치 | |
| US4647711A (en) | Stable front contact current collector for photovoltaic devices and method of making same | |
| Bindu et al. | Semiconducting AgSbSe2 thin film and its application in a photovoltaic structure | |
| US20150221812A1 (en) | SURFACE PASSIVATION FOR CdTe DEVICES | |
| JPH0685444B2 (ja) | カドミウムに富んだＨｇ▲下１−Ｘ▼Ｃｄ▲下ｘ▼ Ｔｅの層を含む太陽電池及びその製造方法 | |
| Musa et al. | Properties of electroless gold contacts on p‐type cadmium telluride | |
| US4342879A (en) | Thin film photovoltaic device | |
| US20100186810A1 (en) | Method for the formation of a non-rectifying back-contact a cdte/cds thin film solar cell | |
| Rouse et al. | Interfacial chemistry and the performance of bromine-etched CdZnTe radiation detector devices | |
| US4595791A (en) | Thin-film photovoltaic devices incorporating current collector grid and method of making | |
| Thompson et al. | Schottky barrier amorphous-crystalline interface formation | |
| Aven et al. | Ohmic Electrical Contacts to P‐Type ZnTe and ZnSexTe1− x | |
| JP2000332273A (ja) | 太陽電池およびその製造方法 | |
| TW434844B (en) | Ohmic contact structure of II-VI semiconductor and its fabricating method | |
| Datta et al. | Thermally stimulated current in p‐type CuInSe2 thin films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |