CA1156505A - Method of directly manufacturing reticles on chrome-coated plates by means of a pattern generator - Google Patents
Method of directly manufacturing reticles on chrome-coated plates by means of a pattern generatorInfo
- Publication number
- CA1156505A CA1156505A CA000352379A CA352379A CA1156505A CA 1156505 A CA1156505 A CA 1156505A CA 000352379 A CA000352379 A CA 000352379A CA 352379 A CA352379 A CA 352379A CA 1156505 A CA1156505 A CA 1156505A
- Authority
- CA
- Canada
- Prior art keywords
- resist
- pattern
- substrate
- layer
- chrome
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 230000008569 process Effects 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052724 xenon Inorganic materials 0.000 claims description 13
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims 2
- 239000012634 fragment Substances 0.000 claims 1
- 230000000284 resting effect Effects 0.000 claims 1
- 239000000839 emulsion Substances 0.000 abstract description 14
- 239000011521 glass Substances 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 35
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 229910052697 platinum Inorganic materials 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 230000018109 developmental process Effects 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 230000004075 alteration Effects 0.000 description 4
- 238000002508 contact lithography Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000004945 emulsification Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 241000511976 Hoya Species 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical class OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- KFVPJMZRRXCXAO-UHFFFAOYSA-N [He].[O] Chemical compound [He].[O] KFVPJMZRRXCXAO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 229910000406 trisodium phosphate Inorganic materials 0.000 description 1
- 235000019801 trisodium phosphate Nutrition 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7917304A FR2460496A1 (fr) | 1979-06-29 | 1979-06-29 | Procede pour fabriquer des reticules sur plaques chromees direc tement par un generateur d'images |
| FR7917304 | 1979-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1156505A true CA1156505A (en) | 1983-11-08 |
Family
ID=9227473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000352379A Expired CA1156505A (en) | 1979-06-29 | 1980-05-21 | Method of directly manufacturing reticles on chrome-coated plates by means of a pattern generator |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4306006A (en, 2012) |
| EP (1) | EP0021095B1 (en, 2012) |
| JP (1) | JPS569747A (en, 2012) |
| CA (1) | CA1156505A (en, 2012) |
| DE (1) | DE3069141D1 (en, 2012) |
| FR (1) | FR2460496A1 (en, 2012) |
| IT (1) | IT1149982B (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4964146A (en) * | 1985-07-31 | 1990-10-16 | Hitachi, Ltd. | Pattern transistor mask and method of using the same |
| GB2189903A (en) * | 1986-04-01 | 1987-11-04 | Plessey Co Plc | An etch technique for metal mask definition |
| US6309926B1 (en) | 1998-12-04 | 2001-10-30 | Advanced Micro Devices | Thin resist with nitride hard mask for gate etch application |
| US6749969B2 (en) | 2001-11-14 | 2004-06-15 | International Business Machines Corporation | Reverse tone process for masks |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1447976A1 (de) * | 1965-09-30 | 1969-10-09 | Telefunken Patent | Verfahren zum Herstellen von Belichtungsmasken mit hohem Kontrast |
| US3877810A (en) * | 1972-11-08 | 1975-04-15 | Rca Corp | Method for making a photomask |
| US3923568A (en) * | 1974-01-14 | 1975-12-02 | Int Plasma Corp | Dry plasma process for etching noble metal |
| US3986876A (en) * | 1974-05-24 | 1976-10-19 | The United States Of America As Represented By The Secretary Of The Navy | Method for making a mask having a sloped relief |
| US4092442A (en) * | 1976-12-30 | 1978-05-30 | International Business Machines Corporation | Method of depositing thin films utilizing a polyimide mask |
-
1979
- 1979-06-29 FR FR7917304A patent/FR2460496A1/fr not_active Withdrawn
-
1980
- 1980-05-09 JP JP6078180A patent/JPS569747A/ja active Granted
- 1980-05-21 CA CA000352379A patent/CA1156505A/en not_active Expired
- 1980-05-29 DE DE8080102985T patent/DE3069141D1/de not_active Expired
- 1980-05-29 EP EP80102985A patent/EP0021095B1/fr not_active Expired
- 1980-06-23 IT IT22954/80A patent/IT1149982B/it active
- 1980-06-23 US US06/161,818 patent/US4306006A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0021095B1 (fr) | 1984-09-12 |
| JPS6154212B2 (en, 2012) | 1986-11-21 |
| FR2460496A1 (fr) | 1981-01-23 |
| US4306006A (en) | 1981-12-15 |
| JPS569747A (en) | 1981-01-31 |
| IT8022954A0 (it) | 1980-06-23 |
| IT1149982B (it) | 1986-12-10 |
| EP0021095A1 (fr) | 1981-01-07 |
| DE3069141D1 (en) | 1984-10-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |