CA1149969A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- CA1149969A CA1149969A CA000346666A CA346666A CA1149969A CA 1149969 A CA1149969 A CA 1149969A CA 000346666 A CA000346666 A CA 000346666A CA 346666 A CA346666 A CA 346666A CA 1149969 A CA1149969 A CA 1149969A
- Authority
- CA
- Canada
- Prior art keywords
- layer
- auxiliary
- thyristor
- main
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 4
- 238000011068 loading method Methods 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims 2
- 230000001960 triggered effect Effects 0.000 claims 1
- 238000010304 firing Methods 0.000 description 9
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 3
- 239000005630 Diquat Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 101100139852 Danio rerio radil gene Proteins 0.000 description 1
- 101100139854 Mus musculus Radil gene Proteins 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41716—Cathode or anode electrodes for thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEP2907732.5 | 1979-02-28 | ||
| DE19792907732 DE2907732A1 (de) | 1979-02-28 | 1979-02-28 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1149969A true CA1149969A (en) | 1983-07-12 |
Family
ID=6064069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000346666A Expired CA1149969A (en) | 1979-02-28 | 1980-02-28 | Thyristor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS6035833B2 (ja) |
| CA (1) | CA1149969A (ja) |
| DE (1) | DE2907732A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05160391A (ja) * | 1991-12-02 | 1993-06-25 | Sankooshiya:Kk | サージ防護デバイスの保持電流制御方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE337064B (ja) * | 1966-10-12 | 1971-07-26 | Asea Ab | |
| DE2407696C3 (de) * | 1974-02-18 | 1979-02-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Thyristor |
| US4012761A (en) * | 1976-04-19 | 1977-03-15 | General Electric Company | Self-protected semiconductor device |
-
1979
- 1979-02-28 DE DE19792907732 patent/DE2907732A1/de not_active Withdrawn
-
1980
- 1980-02-27 JP JP2394280A patent/JPS6035833B2/ja not_active Expired
- 1980-02-28 CA CA000346666A patent/CA1149969A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2907732A1 (de) | 1980-09-04 |
| JPS55130166A (en) | 1980-10-08 |
| JPS6035833B2 (ja) | 1985-08-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |