CA1149086A - Variable-spot raster scanning in an electron beam exposure system - Google Patents
Variable-spot raster scanning in an electron beam exposure systemInfo
- Publication number
- CA1149086A CA1149086A CA000270570A CA270570A CA1149086A CA 1149086 A CA1149086 A CA 1149086A CA 000270570 A CA000270570 A CA 000270570A CA 270570 A CA270570 A CA 270570A CA 1149086 A CA1149086 A CA 1149086A
- Authority
- CA
- Canada
- Prior art keywords
- aperture
- image
- mask plate
- spot
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 title abstract description 33
- 239000000470 constituent Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 12
- 238000003384 imaging method Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229940000425 combination drug Drugs 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000014616 translation Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30472—Controlling the beam
- H01J2237/30483—Scanning
- H01J2237/30488—Raster scan
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31776—Shaped beam
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US65542776A | 1976-02-05 | 1976-02-05 | |
| US655,427 | 1976-02-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1149086A true CA1149086A (en) | 1983-06-28 |
Family
ID=24628844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000270570A Expired CA1149086A (en) | 1976-02-05 | 1977-01-27 | Variable-spot raster scanning in an electron beam exposure system |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS52103967A (enExample) |
| CA (1) | CA1149086A (enExample) |
| DE (1) | DE2704441A1 (enExample) |
| FR (1) | FR2340616A1 (enExample) |
| GB (1) | GB1557924A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5251871A (en) * | 1975-10-23 | 1977-04-26 | Rikagaku Kenkyusho | Projecting method for charge particle beams |
| NL177578C (nl) * | 1976-05-14 | 1985-10-16 | Thomson Csf | Inrichting voor het beschrijven van een voorwerp met een deeltjesbundel. |
| JPS5316578A (en) * | 1976-07-30 | 1978-02-15 | Toshiba Corp | Electron beam exposure apparatus |
| CA1166766A (en) * | 1977-02-23 | 1984-05-01 | Hans C. Pfeiffer | Method and apparatus for forming a variable size electron beam |
| CA1100237A (en) * | 1977-03-23 | 1981-04-28 | Roger F.W. Pease | Multiple electron beam exposure system |
| GB1598219A (en) * | 1977-08-10 | 1981-09-16 | Ibm | Electron beam system |
| JPS5442980A (en) * | 1977-09-10 | 1979-04-05 | Cho Lsi Gijutsu Kenkyu Kumiai | Electron beam unit |
| JPS5463681A (en) * | 1977-10-29 | 1979-05-22 | Nippon Aviotronics Kk | Electron beam exposure device |
| JPS5610926A (en) * | 1979-07-06 | 1981-02-03 | Hitachi Ltd | Electron beam drawing device |
| JPS5744684Y2 (enExample) * | 1981-01-22 | 1982-10-02 | ||
| US4445041A (en) * | 1981-06-02 | 1984-04-24 | Hewlett-Packard Company | Electron beam blanker |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5283177A (en) * | 1975-12-31 | 1977-07-11 | Fujitsu Ltd | Electron beam exposure device |
| JPS5320391A (en) * | 1976-08-09 | 1978-02-24 | Becton Dickinson Co | Blood inspection apparatus |
| JPS5829490A (ja) * | 1981-08-18 | 1983-02-21 | 松下電器産業株式会社 | 脱水機 |
| DE3134348A1 (de) * | 1981-08-31 | 1983-03-10 | Hoechst Ag, 6000 Frankfurt | Verfahren zur reinigung und rueckgewinnung der bei der carbonylierung von methylacetat und/oder dimethylether anfallenden, verunreinigten katalysatorloesung |
-
1977
- 1977-01-24 GB GB283677A patent/GB1557924A/en not_active Expired
- 1977-01-27 CA CA000270570A patent/CA1149086A/en not_active Expired
- 1977-02-02 FR FR7702869A patent/FR2340616A1/fr not_active Withdrawn
- 1977-02-03 DE DE19772704441 patent/DE2704441A1/de active Pending
- 1977-02-04 JP JP1085877A patent/JPS52103967A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2340616A1 (fr) | 1977-09-02 |
| GB1557924A (en) | 1979-12-19 |
| JPS5426875B2 (enExample) | 1979-09-06 |
| DE2704441A1 (de) | 1977-08-11 |
| JPS52103967A (en) | 1977-08-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |