CA1144285A - Ion implanted reverse-conducting thyristor - Google Patents

Ion implanted reverse-conducting thyristor

Info

Publication number
CA1144285A
CA1144285A CA000366042A CA366042A CA1144285A CA 1144285 A CA1144285 A CA 1144285A CA 000366042 A CA000366042 A CA 000366042A CA 366042 A CA366042 A CA 366042A CA 1144285 A CA1144285 A CA 1144285A
Authority
CA
Canada
Prior art keywords
type
layer
substrate
anode
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000366042A
Other languages
English (en)
French (fr)
Inventor
John Bartko
Earl S. Schlegel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA1144285A publication Critical patent/CA1144285A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P30/21—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors
    • H10P30/204—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/084—Ion implantation of compound devices

Landscapes

  • Thyristors (AREA)
CA000366042A 1979-12-05 1980-12-03 Ion implanted reverse-conducting thyristor Expired CA1144285A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US100,680 1979-12-05
US06/100,680 US4278476A (en) 1979-12-05 1979-12-05 Method of making ion implanted reverse-conducting thyristor

Publications (1)

Publication Number Publication Date
CA1144285A true CA1144285A (en) 1983-04-05

Family

ID=22280989

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000366042A Expired CA1144285A (en) 1979-12-05 1980-12-03 Ion implanted reverse-conducting thyristor

Country Status (7)

Country Link
US (1) US4278476A (show.php)
EP (1) EP0030370B1 (show.php)
JP (1) JPS5693366A (show.php)
BR (1) BR8007898A (show.php)
CA (1) CA1144285A (show.php)
DE (1) DE3070561D1 (show.php)
IN (1) IN152658B (show.php)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4320571A (en) * 1980-10-14 1982-03-23 International Rectifier Corporation Stencil mask process for high power, high speed controlled rectifiers
EP0074133B1 (de) * 1981-08-25 1987-01-28 BBC Aktiengesellschaft Brown, Boveri & Cie. Thyristor
JPS5860577A (ja) * 1981-10-07 1983-04-11 Hitachi Ltd 半導体装置
US4623910A (en) 1982-09-24 1986-11-18 Risberg Robert L Semiconductor device
DE3404834A1 (de) * 1984-02-08 1985-08-08 Hahn-Meitner-Institut für Kernforschung Berlin GmbH, 1000 Berlin Halbleiter-leistungsbauelement, insbesondere thyristor und gridistor, sowie verfahren zu dessen herstellung
JP2579979B2 (ja) * 1987-02-26 1997-02-12 株式会社東芝 半導体素子の製造方法
JPH0642542B2 (ja) * 1988-04-08 1994-06-01 株式会社東芝 高耐圧半導体装置の製造方法
US5136344A (en) * 1988-11-02 1992-08-04 Universal Energy Systems, Inc. High energy ion implanted silicon on insulator structure
DE4121375A1 (de) * 1991-06-28 1993-01-14 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung
US5426059A (en) * 1994-05-26 1995-06-20 Queyssac; Daniel G. Method of making vertically stacked bipolar semiconductor structure
US6787816B1 (en) * 2000-09-01 2004-09-07 Rensselaer Polytechnic Institute Thyristor having one or more doped layers
KR100934829B1 (ko) * 2008-02-15 2009-12-31 주식회사 하이닉스반도체 사이리스터 및 그 제조방법

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3324359A (en) * 1963-09-30 1967-06-06 Gen Electric Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction
US3428870A (en) * 1965-07-29 1969-02-18 Gen Electric Semiconductor devices
US3622382A (en) * 1969-05-05 1971-11-23 Ibm Semiconductor isolation structure and method of producing
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region
US3662382A (en) * 1970-11-09 1972-05-09 Camera And Instr Corp Keyboard controlled electrical code-signal generator system
US4049478A (en) * 1971-05-12 1977-09-20 Ibm Corporation Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device
US4009059A (en) * 1972-01-08 1977-02-22 Mitsubishi Denki Kabushiki Kaisha Reverse conducting thyristor and process for producing the same
FR2274140A1 (fr) * 1974-06-04 1976-01-02 Alsthom Cgee Thyristor a conduction inverse
CH579827A5 (show.php) * 1974-11-04 1976-09-15 Bbc Brown Boveri & Cie
CH580339A5 (show.php) * 1974-12-23 1976-09-30 Bbc Brown Boveri & Cie
US4038106A (en) * 1975-04-30 1977-07-26 Rca Corporation Four-layer trapatt diode and method for making same
US4080620A (en) * 1975-11-17 1978-03-21 Westinghouse Electric Corporation Reverse switching rectifier and method for making same
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
US4168990A (en) * 1977-04-04 1979-09-25 International Rectifier Corporation Hot implantation at 1100°-1300° C. for forming non-gaussian impurity profile

Also Published As

Publication number Publication date
EP0030370B1 (en) 1985-04-24
DE3070561D1 (en) 1985-05-30
BR8007898A (pt) 1981-06-16
JPS5693366A (en) 1981-07-28
EP0030370A2 (en) 1981-06-17
EP0030370A3 (en) 1981-09-16
US4278476A (en) 1981-07-14
IN152658B (show.php) 1984-03-03

Similar Documents

Publication Publication Date Title
US5900652A (en) Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices
US3897274A (en) Method of fabricating dielectrically isolated semiconductor structures
US6610572B1 (en) Semiconductor device and method for manufacturing the same
US7485920B2 (en) Process to create buried heavy metal at selected depth
CA1071333A (en) Tapered mask method of semiconductor manufacture
EP0345435B2 (en) Semiconductor device with a high breakdown voltage and method for its manufacture
CA1144285A (en) Ion implanted reverse-conducting thyristor
CA1162326A (en) Forming impurity regions in semiconductor bodies by high energy ion irradiation, and semiconductor devices made thereby
WO2001097258A2 (en) Fast recovery diode and method for its manufacture
US4004950A (en) Method for improving the doping of a semiconductor material
US4151011A (en) Process of producing semiconductor thermally sensitive switching element by selective implantation of inert ions in thyristor structure
US6762080B2 (en) Method of manufacturing a semiconductor device having a cathode and an anode from a wafer
KR100503905B1 (ko) 반도체장치 및 그 제조방법
US7534666B2 (en) High voltage non punch through IGBT for switch mode power supplies
KR20020053713A (ko) 반도체장치
EP0506170B1 (en) Integrated structure of bipolar power device with high current density and fast diode and related manufacturing process
US4135292A (en) Integrated circuit contact and method for fabricating the same
US8993372B2 (en) Method for producing a semiconductor component
JP2002359373A (ja) 半導体装置及びその製造方法
US8314002B2 (en) Semiconductor device having increased switching speed
US3770516A (en) Monolithic integrated circuits
KR100299912B1 (ko) 절연 게이트 바이폴라 트랜지스터의 제조 방법
JPH02262372A (ja) 半導体装置およびその製造方法
JP2025158756A (ja) 半導体装置及びその製造方法
EP0774167A1 (en) A power semiconductor device

Legal Events

Date Code Title Description
MKEX Expiry