CA1139454A - Floating gate vertical fet - Google Patents

Floating gate vertical fet

Info

Publication number
CA1139454A
CA1139454A CA000354743A CA354743A CA1139454A CA 1139454 A CA1139454 A CA 1139454A CA 000354743 A CA000354743 A CA 000354743A CA 354743 A CA354743 A CA 354743A CA 1139454 A CA1139454 A CA 1139454A
Authority
CA
Canada
Prior art keywords
electrodes
embedded
gate
drain
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000354743A
Other languages
English (en)
French (fr)
Inventor
Alfred Y. Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA1139454A publication Critical patent/CA1139454A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/061—Manufacture or treatment of FETs having Schottky gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0124—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CA000354743A 1979-07-05 1980-06-25 Floating gate vertical fet Expired CA1139454A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/054,822 US4249190A (en) 1979-07-05 1979-07-05 Floating gate vertical FET
US054,822 1979-07-05

Publications (1)

Publication Number Publication Date
CA1139454A true CA1139454A (en) 1983-01-11

Family

ID=21993755

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000354743A Expired CA1139454A (en) 1979-07-05 1980-06-25 Floating gate vertical fet

Country Status (5)

Country Link
US (1) US4249190A (OSRAM)
EP (1) EP0031377A4 (OSRAM)
JP (1) JPS5925392B2 (OSRAM)
CA (1) CA1139454A (OSRAM)
WO (1) WO1981000175A1 (OSRAM)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951099A (en) * 1982-02-09 1990-08-21 Trw Inc. Opposed gate-source transistor
US4551904A (en) * 1982-02-09 1985-11-12 Trw Inc. Opposed gate-source transistor
FR2524713A1 (fr) * 1982-04-02 1983-10-07 Thomson Csf Transistor a effet de champ du type planar a grille supplementaire enterree et procede de realisation d'un tel transistor
US4546375A (en) * 1982-06-24 1985-10-08 Rca Corporation Vertical IGFET with internal gate and method for making same
FR2534416A1 (fr) * 1982-10-12 1984-04-13 Thomson Csf Transistor a effet de champ, de type planar, a structure verticale
US4837175A (en) * 1983-02-15 1989-06-06 Eaton Corporation Making a buried channel FET with lateral growth over amorphous region
US4833095A (en) * 1985-02-19 1989-05-23 Eaton Corporation Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
US4587541A (en) * 1983-07-28 1986-05-06 Cornell Research Foundation, Inc. Monolithic coplanar waveguide travelling wave transistor amplifier
US4507845A (en) * 1983-09-12 1985-04-02 Trw Inc. Method of making field effect transistors with opposed source _and gate regions
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4724220A (en) * 1985-02-19 1988-02-09 Eaton Corporation Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US4624004A (en) 1985-07-15 1986-11-18 Eaton Corporation Buried channel MESFET with backside source contact
US4641164A (en) * 1986-05-30 1987-02-03 Rca Corporation Bidirectional vertical power MOS device and fabrication method
US4700460A (en) * 1986-05-30 1987-10-20 Rca Corporation Method for fabricating bidirectional vertical power MOS device
JP2504504B2 (ja) * 1988-01-29 1996-06-05 財団法人半導体研究振興会 光電変換装置
US5162690A (en) * 1989-04-14 1992-11-10 Murata Manufacturing Co., Ltd. Surface acoustic wave device
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact
US5111254A (en) * 1990-08-17 1992-05-05 Gte Laboratories Incorporated Floating gate array transistors
US5709958A (en) * 1992-08-27 1998-01-20 Kabushiki Kaisha Toshiba Electronic parts
AU2003249439A1 (en) * 2002-08-07 2004-02-25 Koninklijke Philips Electronics N.V. Field effect transistor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1423096A (fr) * 1964-11-20 1966-01-03 Europ Des Semiconducteurs Soc Perfectionnements aux dispositifs semiconducteurs à effet de champ et à leurs procédés de fabrication
US3412297A (en) * 1965-12-16 1968-11-19 United Aircraft Corp Mos field-effect transistor with a onemicron vertical channel
JPS4915668B1 (OSRAM) * 1969-04-15 1974-04-16
NL7212912A (OSRAM) * 1972-09-23 1974-03-26
US3938241A (en) * 1972-10-24 1976-02-17 Motorola, Inc. Vertical channel junction field-effect transistors and method of manufacture
US3823352A (en) * 1972-12-13 1974-07-09 Bell Telephone Labor Inc Field effect transistor structures and methods
NL7308240A (OSRAM) * 1973-06-14 1974-12-17
US3906541A (en) * 1974-03-29 1975-09-16 Gen Electric Field effect transistor devices and methods of making same
US4075652A (en) * 1974-04-17 1978-02-21 Matsushita Electronics Corporation Junction gate type gaas field-effect transistor and method of forming
DE2611338C3 (de) * 1976-03-17 1979-03-29 Siemens Ag, 1000 Berlin Und 8000 Muenchen Feldeffekttransistor mit sehr kurzer Kanallange
US4157556A (en) * 1977-01-06 1979-06-05 Varian Associates, Inc. Heterojunction confinement field effect transistor

Also Published As

Publication number Publication date
EP0031377A1 (en) 1981-07-08
WO1981000175A1 (en) 1981-01-22
JPS5925392B2 (ja) 1984-06-16
US4249190A (en) 1981-02-03
EP0031377A4 (en) 1983-04-25
JPS56501181A (OSRAM) 1981-08-20

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