CA1118914A - X-ray lithography apparatus and method of use - Google Patents
X-ray lithography apparatus and method of useInfo
- Publication number
- CA1118914A CA1118914A CA000317483A CA317483A CA1118914A CA 1118914 A CA1118914 A CA 1118914A CA 000317483 A CA000317483 A CA 000317483A CA 317483 A CA317483 A CA 317483A CA 1118914 A CA1118914 A CA 1118914A
- Authority
- CA
- Canada
- Prior art keywords
- resist
- developing
- ray
- tungsten
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000001015 X-ray lithography Methods 0.000 title claims abstract description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 39
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 39
- 239000010937 tungsten Substances 0.000 claims abstract description 39
- 238000001459 lithography Methods 0.000 claims abstract description 8
- 230000005855 radiation Effects 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052790 beryllium Inorganic materials 0.000 claims description 12
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 4
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052794 bromium Inorganic materials 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- 229910001080 W alloy Inorganic materials 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 150000003658 tungsten compounds Chemical class 0.000 claims 2
- 238000011161 development Methods 0.000 abstract description 8
- 238000000609 electron-beam lithography Methods 0.000 abstract description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 23
- 229910052782 aluminium Inorganic materials 0.000 description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- 239000006096 absorbing agent Substances 0.000 description 11
- 229910052763 palladium Inorganic materials 0.000 description 11
- 238000013461 design Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- IWYRWIUNAVNFPE-UHFFFAOYSA-N Glycidaldehyde Chemical compound O=CC1CO1 IWYRWIUNAVNFPE-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012668 chain scission Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- RYGMFSIKBFXOCR-AKLPVKDBSA-N copper-67 Chemical compound [67Cu] RYGMFSIKBFXOCR-AKLPVKDBSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000019988 mead Nutrition 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
- G03F7/2039—X-ray radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Toxicology (AREA)
- Plasma & Fusion (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Radiography Using Non-Light Waves (AREA)
- Silver Salt Photography Or Processing Solution Therefor (AREA)
- X-Ray Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/869,541 US4215192A (en) | 1978-01-16 | 1978-01-16 | X-ray lithography apparatus and method of use |
| US869,541 | 1986-06-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1118914A true CA1118914A (en) | 1982-02-23 |
Family
ID=25353753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000317483A Expired CA1118914A (en) | 1978-01-16 | 1978-12-06 | X-ray lithography apparatus and method of use |
Country Status (8)
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4342917A (en) * | 1978-01-16 | 1982-08-03 | The Perkin-Elmer Corporation | X-ray lithography apparatus and method of use |
| US4388728A (en) * | 1978-11-20 | 1983-06-14 | The Machlett Laboratories, Incorporated | Soft X-ray lithography system |
| US4357364A (en) * | 1981-04-27 | 1982-11-02 | Rockwell International Corporation | High rate resist polymerization method |
| US4477921A (en) * | 1981-11-27 | 1984-10-16 | Spire Corporation | X-Ray lithography source tube |
| JPS58111318A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | 現像方法 |
| US4439870A (en) * | 1981-12-28 | 1984-03-27 | Bell Telephone Laboratories, Incorporated | X-Ray source and method of making same |
| US4493097A (en) * | 1982-08-30 | 1985-01-08 | The Perkin-Elmer Corporation | Electron gun assembly |
| US4665541A (en) * | 1983-06-06 | 1987-05-12 | The University Of Rochester | X-ray lithography |
| DE3330806A1 (de) | 1983-08-26 | 1985-03-14 | Feinfocus Röntgensysteme GmbH, 3050 Wunstorf | Roentgenlithographiegeraet |
| EP0141041B1 (de) * | 1983-08-26 | 1990-01-03 | feinfocus Verwaltungs GmbH & Co. KG | Röntgenlithographiegerät |
| US4534047A (en) * | 1984-01-06 | 1985-08-06 | The Perkin-Elmer Corporation | Mask ring assembly for X-ray lithography |
| US4610020A (en) * | 1984-01-06 | 1986-09-02 | The Perkin-Elmer Corporation | X-ray mask ring and apparatus for making same |
| US4539695A (en) * | 1984-01-06 | 1985-09-03 | The Perkin-Elmer Corporation | X-Ray lithography system |
| GB2155201B (en) * | 1984-02-24 | 1988-07-13 | Canon Kk | An x-ray exposure apparatus |
| US5821035A (en) * | 1996-03-06 | 1998-10-13 | Sony Corporation | Resist developing apparatus and resist developing method |
| JP3702108B2 (ja) * | 1998-10-07 | 2005-10-05 | 株式会社東芝 | レジストパターン形成方法 |
| EP3696845A1 (en) * | 2019-02-12 | 2020-08-19 | Malvern Panalytical B.V. | X-ray tube and x-ray analysis system |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3743842A (en) * | 1972-01-14 | 1973-07-03 | Massachusetts Inst Technology | Soft x-ray lithographic apparatus and process |
| US3742230A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask support substrate |
| US3742229A (en) * | 1972-06-29 | 1973-06-26 | Massachusetts Inst Technology | Soft x-ray mask alignment system |
| CA984887A (en) * | 1973-01-03 | 1976-03-02 | Machlett Laboratories | X-ray tube anode target |
| DE2346719C3 (de) * | 1973-09-17 | 1980-01-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Mehrschichtige Bestrahlungsmaske für die Röntgenstrahl-Fotolithografie |
| US4035522A (en) * | 1974-07-19 | 1977-07-12 | International Business Machines Corporation | X-ray lithography mask |
| US4061829A (en) * | 1976-04-26 | 1977-12-06 | Bell Telephone Laboratories, Incorporated | Negative resist for X-ray and electron beam lithography and method of using same |
-
1978
- 1978-01-16 US US05/869,541 patent/US4215192A/en not_active Expired - Lifetime
- 1978-12-06 CA CA000317483A patent/CA1118914A/en not_active Expired
- 1978-12-18 DE DE19782854693 patent/DE2854693A1/de not_active Ceased
-
1979
- 1979-01-09 JP JP45879A patent/JPS54103346A/ja active Pending
- 1979-01-10 FR FR7900521A patent/FR2414791A1/fr active Granted
- 1979-01-12 CH CH296/79A patent/CH652236A5/de not_active IP Right Cessation
- 1979-01-12 GB GB8100063A patent/GB2073901A/en not_active Withdrawn
- 1979-01-12 GB GB791199A patent/GB2012452B/en not_active Expired
- 1979-01-16 IT IT47655/79A patent/IT1114336B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54103346A (en) | 1979-08-14 |
| FR2414791B1 (US20030157376A1-20030821-M00001.png) | 1984-11-09 |
| IT7947655A0 (it) | 1979-01-16 |
| GB2012452A (en) | 1979-07-25 |
| US4215192A (en) | 1980-07-29 |
| FR2414791A1 (fr) | 1979-08-10 |
| GB2073901A (en) | 1981-10-21 |
| CH652236A5 (de) | 1985-10-31 |
| DE2854693A1 (de) | 1979-07-19 |
| GB2012452B (en) | 1983-01-06 |
| IT1114336B (it) | 1986-01-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1118914A (en) | X-ray lithography apparatus and method of use | |
| US4266138A (en) | Diamond targets for producing high intensity soft x-rays and a method of exposing x-ray resists | |
| US8945310B2 (en) | Method and device for cleaning at least one optical component | |
| US5989776A (en) | Photoresist composition for extreme ultraviolet lithography | |
| JP4320999B2 (ja) | Ｘ線発生装置及び露光装置 | |
| US4184078A (en) | Pulsed X-ray lithography | |
| US4960675A (en) | Hydrogen ion microlithography | |
| JP4901874B2 (ja) | Ｅｕｖミラー | |
| US4931380A (en) | Pre-exposure method for increased sensitivity in high contrast resist development of positive working diazo ketone photoresist | |
| EP0321147B1 (en) | Photoelectron mask and photo cathode image projection method using the same | |
| JP2020537295A (ja) | ルテニウムで被包された光電陰極電子放出器 | |
| US4453262A (en) | X-Ray lithography apparatus and method of use | |
| US4342917A (en) | X-ray lithography apparatus and method of use | |
| Kitayama et al. | Proposal for a 50 nm proximity x-ray lithography system and extension to 35 nm by resist material selection | |
| Turcu et al. | X-ray lithography using a KrF laser-plasma source at hν≈ 1 keV | |
| Cefalas et al. | Mass spectroscopic and degassing characteristics of polymeric materials for 157 nm photolithography | |
| CA1136775A (en) | Method for developing a cop resist used in x-ray lithography | |
| CA1131806A (en) | X-ray lithography apparatus | |
| JP2530591B2 (ja) | 大電流密度の電子放出に適するパルス状レ−ザ−光励起による電子源装置 | |
| Elton et al. | X‐ray damage to optical components using a laser‐plasma source | |
| Levinstein | DEVELOPMENTS IN X-RAY LITHOGRAPHY | |
| JP2001307669A (ja) | 軟ｘ線発生装置及びｘ線検査装置 | |
| Stead et al. | Soft x-ray contact microscopy of biological specimens: Aluminum-coated silicon nitride windows as XUV filters | |
| Heuberger et al. | Present status and problems of x-ray lithography | |
| US6004726A (en) | Method of forming a lithographic pattern utilizing charged beam particles between 0.1 and 5.0 ev |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19990223 |