CA1102010A - Magnetic heat sink for semiconductor ship - Google Patents

Magnetic heat sink for semiconductor ship

Info

Publication number
CA1102010A
CA1102010A CA305,488A CA305488A CA1102010A CA 1102010 A CA1102010 A CA 1102010A CA 305488 A CA305488 A CA 305488A CA 1102010 A CA1102010 A CA 1102010A
Authority
CA
Canada
Prior art keywords
chip
heat sink
heat
magnet
fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA305,488A
Other languages
French (fr)
Inventor
Kenneth S. Sachar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1102010A publication Critical patent/CA1102010A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3205—Shape
    • H01L2224/32057—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73257—Bump and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83051—Forming additional members, e.g. dam structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

MAGNETIC HEAT SINK FOR SEMICONDUCTOR CHIP

ABSTRACT OF THE DISCLOSURE
Heat generated in a multicontact semiconductor chip can be conducted away by the use of a magnetic fluid held in place by the field from a magnet which in turn conducts the heat transmitted through the fluid to a heat sink to which the magnet is bonded for thermal transfer.

Description

- 9 Ai the capabillty to lncorporate more and more devices ln large scale semlconductor chlps advances, however tiny the power dissipa-11 tion ln an indlvldual devlce, the dlfflculty of gettlng the heat out 12 of the chlp becomes compounded by several conflicting considerations.
13 For example, as the devlce~ become smaller, the contact area devoted 14 to signal input and output becomes totally lnadequate to also be relied upon to conduct the heat generated within the chlp. Further, because 16 of the llmited physlcal strength of the small connections rigid mechanical J 17 contact for thermal transfer, as a general rule, cannot be employed because lB a mismatch in thermal expanslon coefficients can result in an unacceptably 19 large stress.

'~ .
SUMMARY OF THE INVENTION
21 Through the use of a magnet thermally bonded to a large area 22 heat sink, the heat 8enerated in the chip can be conducted through 23 a magnetic fluid and (held in place and shaped by the flux emanating 24 from the magnet) covering a large area on the back of the chip. The fluid permits both conduction and convection heat transfer and allows 26 for repair and changes to the chip.

Y0977-oo~ . - 1 -, . . :
. ''~'~', ' . , ' ~

- : . I : , .

.. , . , . . , . `: . ` `

11~2~
More particularly, there is provided:
Heat transfer apparatus for conducting heat from a semiconductor chip to a heat sink comprising in combina-tion:
a fluid composed of magnetically responsive particles suspended in a vehicle positioned in contact with a semi-conductor chip and in contact with a magnetic heat sink.

. . .
There is also provided:
In semiconductor integrated circuit apparatus of the type wherein signals to and from a semiconductor chip are entered and leave the chip from one side, the improvement comprising:
means for dissipating heat from the back of said chip via a fluid composed of magnetically responsive particles suspended in a vehicle, said fluid cooperating with a shaped magnetic field emanating from a magnet bonded to a heat sink to thereby conduct heat from said chip to said heat sink.

: _ _.. _ .... ... ..... . . .. ,.. , . .. ...... . .. . . _ ., .. .. . " .. . .
There is further pro~ided: ...
. Semiconductor integrated circuit apparatus comprising in combination:
a substrate;
a semiconductor integrated circuit chip;
a plurality of interconnections between electrical points on said substrate and electrical points on a first side of said chip;
a heat sink, a magnet thermally bonded to said heat sir.k and a fluid composed of magnetically responsive particles suspended in a vehicle forming contact between said magnet and the opposite side of said chip.

-la-3Z~ 3
2 FIG. 1 is a sketch of the magnetic heat sink of the invention, and
3 FIG. 2 is a cross sectional view of FIG. 1 showlng the details
4 of the magnetic flux of the magnet.

DETAILED DESCRIPTION OF THE INVENTION
6 Where semiconductor chips are mounted on a substrate which 7 generally carries the wiring to communicate with the other parts of the 8 apparatus of which the chip i8 a part, there will be a plurality of 9 electrical current carrying pads on the chip. These pads for signal speed and for area conservation are generally so small that the heat 11 generated by the individual active elements in the chip cannot be 12 dissipated through them. In addition to area and signal response con-13 siderations, thermal expansion coefficient mismatches may be encountered 14 that limit the ability to increase the physical size of the pads.
Through this invention a magnetic fluid i8 applied to the back 16 of the chip. The fluid is shaped and its thermal path is governed by 17 the flux from a magnet thermally bonded to a large heat sink. This allows 18 the different elements to move with respect to each other for coefficient 19 of expansion problems. At the same time a maximum of thermal transfer is achieved.
21 Referring now to FIG. 1 a substrate 1 is provided which may be 22 one or a plurality of insulating layers containing wiring and having signal 23 pads 2 to which connections 3 to a corresponding pad on chip 4 are made.
24 The connections illustrated involve the solder reflow technique wherein surface tension of a solder quantity limited in area by the size of the 26 pad operates to lift the chip above the substrate and at the same time 27 provide an electrical connection. Another chip connection technique, 28 well known in the art, involves wire bonding from a lead frame. This i~VZ~
1 technique was not illustra~ed but it will bè clear that the principle 2 involved in both generallzed techniques or any other light involves 3 fairly small connections whose physical size is governed by use of 4 available area, signal responsiveness, and coefficient of expansion matching such th~t making the individual connections large enough to carry 6 the heat generated in the chip, becomes less and less practical.
7 In accordance with the invention, on the back of the chip 4, a 8 magnetic fluid 5 is applied. This fluid is one of a number available in 9 the art and conslsts of a vehicle in which magnetic particles are suspended.
The fluid has a viscosity such that it will not creep over the edge of the 11 chip and has a particle sugpension such that a magnetic fluid will change 12 the shape of the fluid quantity. One commercially available fluid is 13 manufactured by a corporation known as Ferro Fluidics Corporation. The 14 fluid must remain stable through the operating temperature of the chip.
The magnet 6, which is preferably a permanent magnet for simplicity, in 16 turn is thermally bonded, generally by direct contact to a heat sink 7 17 which is shown as having fins 8, although ie will be apparent to one 18 skilled in the art that any heat sinking approach including direct contact 19 with further fluids, is acceptable within the purview of the invention.
Referring next to FIG. 2 a cross sectional area of FIG. 1 showing 21 the details of the magnet 6 and the magnetic fluid 5 are provided. In 22 FIG. 2 the chip 3 is agaln shown using the solder reflow type connections 2 23 to the substrate 1. On the back of the chip 3 is shown the magnetic fluid 24 5. The magnet 6 has a shape such that the lines of flux go as is illus-trated from an outside region 9 to a centralized region 10, such that the 26 flux causes the magnetic fluid 5 to assume a shape permitting a larger 27 fluid quantity than viscosity would ordinarily permit and in turn facilita-28 ting increased convection and conduction of the heat from the back of the i~32~:~;63 1 chips to the magnet 6 which in turn is bonded thermally to the heat sink 7 2 which ln turn transfers the heat through the fins 8 to the surrounding 3 environment.
4 The magnet 6 has a shape through its perlphery 9 and its central portion 10 to accomplish the following functions. It shapes the magnetic 6 fluid 5 to permit more fluid than viscosity will permit if needed, and it7 holds the fluid in place during vibrations and thermal expansion. The 8 shape of the fluid is such that heat transfer by both conduction and con-9 vection is enhanced. The non-uniform magnetic field generally draws the fluid to the region of higher magnetic field strengths which is generally 11 the center of the chip. If the quality of fluid is property ad~usted, the12 fluid will seal the region between the back of the chip and the magnet so13 that good thermal contact is produced between the chip and the heat sink,14 and the fluid connection will be independent of orientation of the structure.
Since no rigid contact exists the chip and the magnet can readily be brought 16 together and separated allowing assembly and repair to be accomplished con-17 veniently.
18 What has been described i8 the use of a magnet and a magnetic 19 fluid to enhance both conduction and convection of heat from the back of a chip to a heat sink while at the same time maintaining a non-rigid but 21 thermally efficient contact.

Claims (6)

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows:
1. Heat transfer apparatus for conducting heat from a semiconductor chip to a heat sink comprising in combina-tion:
a fluid composed of magnetically responsive particles suspended in a vehicle positioned in contact with a semi-conductor chip and in contact with a magnetic heat sink.
2. The heat transfer apparatus of claim 1 wherein said magnetic heat sink is made up of a magnet bonded to a finned heat transfer member.
3. The heat transfer apparatus of claim 2 wherein said magnetic heat sink has a shape producing a circular mag-netic flux from a peripheral ring to a centralized region.
4. In semiconductor integrated circuit apparatus of the type wherein signals to and from a semiconductor chip are entered and leave the chip from one side, the improvement comprising:
means for dissipating heat from the back of said chip via a fluid composed of magnetically responsive particles suspended in a vehicle, said fluid cooperating with a shaped magnetic field emanating from a magnet bonded to a heat sink to thereby conduct heat from said chip to said heat sink.
5. Semiconductor integrated circuit apparatus comprising in combination:
a substrate;
a semiconductor integrated circuit chip;
a plurality of interconnections between electrical points on said substrate and electrical points on a first side of said chip;

a heat sink, a magnet thermally bonded to said heat sink and a fluid composed of magnetically responsive particles suspended in a vehicle forming contact between said magnet and the opposite side of said chip.
6. The apparatus of claim 5 wherein said magnet pro-vides a shaped magnetic field from a peripheral region to a centralized region.
CA305,488A 1977-08-12 1978-06-14 Magnetic heat sink for semiconductor ship Expired CA1102010A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82419777A 1977-08-12 1977-08-12
US824,197 1977-08-12

Publications (1)

Publication Number Publication Date
CA1102010A true CA1102010A (en) 1981-05-26

Family

ID=25240847

Family Applications (1)

Application Number Title Priority Date Filing Date
CA305,488A Expired CA1102010A (en) 1977-08-12 1978-06-14 Magnetic heat sink for semiconductor ship

Country Status (5)

Country Link
EP (1) EP0000856B1 (en)
JP (1) JPS5432074A (en)
CA (1) CA1102010A (en)
DE (1) DE2861442D1 (en)
IT (1) IT1112288B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2495846A1 (en) * 1980-12-05 1982-06-11 Cii Honeywell Bull ELECTRICAL CONNECTION DEVICE HAVING HIGH DENSITY OF CONTACTS
FR2495838A1 (en) * 1980-12-05 1982-06-11 Cii Honeywell Bull REMOVABLE COOLING DEVICE FOR INTEGRATED CIRCUIT CARRIERS
US5594355A (en) * 1994-07-19 1997-01-14 Delta Design, Inc. Electrical contactor apparatus for testing integrated circuit devices
JPH09210801A (en) * 1996-02-05 1997-08-15 Yuji Inomata Sensor to be placed in duct
FR2811476B1 (en) 2000-07-07 2002-12-06 Thomson Csf ELECTRONIC DEVICE WITH THERMALLY CONDUCTIVE ENCAPSULANT
US7031160B2 (en) * 2003-10-07 2006-04-18 The Boeing Company Magnetically enhanced convection heat sink
US7516778B2 (en) * 2005-09-06 2009-04-14 Sun Microsystems, Inc. Magneto-hydrodynamic heat sink
US8730674B2 (en) * 2011-12-12 2014-05-20 Toyota Motor Engineering & Manufacturing North America, Inc. Magnetic fluid cooling devices and power electronics assemblies
JP6036431B2 (en) * 2013-03-18 2016-11-30 富士通株式会社 Semiconductor device
CN114390772B (en) * 2021-12-29 2024-03-08 江苏密特科智能装备制造有限公司 Precise component of semiconductor equipment

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3706127A (en) * 1970-04-27 1972-12-19 Ibm Method for forming heat sinks on semiconductor device chips
GB1441433A (en) * 1973-09-18 1976-06-30 Ind Instr Ltd Heat conductive pastes

Also Published As

Publication number Publication date
JPS5635026B2 (en) 1981-08-14
JPS5432074A (en) 1979-03-09
IT1112288B (en) 1986-01-13
DE2861442D1 (en) 1982-02-11
IT7826104A0 (en) 1978-07-26
EP0000856B1 (en) 1981-12-16
EP0000856A1 (en) 1979-02-21

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