CA1101992A - Bipolar transistor memory with capacitive storage - Google Patents

Bipolar transistor memory with capacitive storage

Info

Publication number
CA1101992A
CA1101992A CA183,363A CA183363A CA1101992A CA 1101992 A CA1101992 A CA 1101992A CA 183363 A CA183363 A CA 183363A CA 1101992 A CA1101992 A CA 1101992A
Authority
CA
Canada
Prior art keywords
voltage
coupled
transistor
capacitor
storage means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA183,363A
Other languages
English (en)
French (fr)
Inventor
Wilbur D. Pricer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1101992A publication Critical patent/CA1101992A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)
CA183,363A 1972-11-01 1973-10-15 Bipolar transistor memory with capacitive storage Expired CA1101992A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30296372A 1972-11-01 1972-11-01
US302,963 1981-09-17

Publications (1)

Publication Number Publication Date
CA1101992A true CA1101992A (en) 1981-05-26

Family

ID=23169994

Family Applications (1)

Application Number Title Priority Date Filing Date
CA183,363A Expired CA1101992A (en) 1972-11-01 1973-10-15 Bipolar transistor memory with capacitive storage

Country Status (6)

Country Link
JP (1) JPS546178B2 (en。)
CA (1) CA1101992A (en。)
DE (1) DE2348065C3 (en。)
FR (1) FR2204849B1 (en。)
GB (1) GB1379879A (en。)
IT (1) IT993090B (en。)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979734A (en) * 1975-06-16 1976-09-07 International Business Machines Corporation Multiple element charge storage memory cell
JPH0420374U (en。) * 1990-06-13 1992-02-20

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355720A (en) * 1964-03-05 1967-11-28 Rca Corp Memory using charge storage diodes
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3614753A (en) * 1969-11-10 1971-10-19 Shell Oil Co Single-rail solid-state memory with capacitive storage
US3729719A (en) * 1970-11-27 1973-04-24 Ibm Stored charge storage cell using a non latching scr type device
GB1330155A (en) * 1970-12-17 1973-09-12 Ferranti Ltd Semiconductor information storage devices

Also Published As

Publication number Publication date
GB1379879A (en) 1975-01-08
JPS4979133A (en。) 1974-07-31
IT993090B (it) 1975-09-30
DE2348065A1 (de) 1974-05-09
DE2348065C3 (de) 1982-03-18
DE2348065B2 (de) 1981-07-09
JPS546178B2 (en。) 1979-03-26
FR2204849A1 (en。) 1974-05-24
FR2204849B1 (en。) 1976-06-18

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Legal Events

Date Code Title Description
MKEX Expiry