CA1090457A - Structure a photodiode ayant une meilleure reponse a la couleur bleue - Google Patents

Structure a photodiode ayant une meilleure reponse a la couleur bleue

Info

Publication number
CA1090457A
CA1090457A CA282,968A CA282968A CA1090457A CA 1090457 A CA1090457 A CA 1090457A CA 282968 A CA282968 A CA 282968A CA 1090457 A CA1090457 A CA 1090457A
Authority
CA
Canada
Prior art keywords
layer
doping density
junction
conductivity
photodiode device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA282,968A
Other languages
English (en)
Inventor
Savvas G. Chamberlain
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1090457A publication Critical patent/CA1090457A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CA282,968A 1976-08-23 1977-07-18 Structure a photodiode ayant une meilleure reponse a la couleur bleue Expired CA1090457A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71705276A 1976-08-23 1976-08-23
US717,052 1976-08-23

Publications (1)

Publication Number Publication Date
CA1090457A true CA1090457A (fr) 1980-11-25

Family

ID=24880516

Family Applications (1)

Application Number Title Priority Date Filing Date
CA282,968A Expired CA1090457A (fr) 1976-08-23 1977-07-18 Structure a photodiode ayant une meilleure reponse a la couleur bleue

Country Status (6)

Country Link
US (1) US4107722A (fr)
JP (1) JPS5326593A (fr)
CA (1) CA1090457A (fr)
DE (1) DE2730477A1 (fr)
FR (1) FR2363197A1 (fr)
IT (1) IT1118044B (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4219830A (en) * 1978-06-19 1980-08-26 Gibbons James F Semiconductor solar cell
JPS5582472A (en) * 1978-12-13 1980-06-21 Ibm Silicone solar energy converter
JPS5798961A (en) * 1980-12-11 1982-06-19 Sanyo Electric Co Ltd Photodiode for detecting index light signal in beam index type color television receiver
GB8417303D0 (en) * 1984-07-06 1984-08-08 Secr Defence Infra-red detector
EP0296371B1 (fr) * 1987-06-22 1992-12-23 Landis & Gyr Business Support AG Photodétecteur pour l'ultraviolet et procédé de fabrication
US4968634A (en) * 1988-05-20 1990-11-06 Siemens Aktiengesellschaft Fabrication process for photodiodes responsive to blue light
EP0625803B1 (fr) * 1993-05-19 1998-10-28 Hewlett-Packard GmbH Structure de photodiode
JP3516552B2 (ja) * 1996-04-30 2004-04-05 シャープ株式会社 受光素子の製造方法
US6287886B1 (en) * 1999-08-23 2001-09-11 United Microelectronics Corp. Method of forming a CMOS image sensor
JP2003197949A (ja) * 2001-12-26 2003-07-11 Sharp Corp 受光素子および回路内蔵型受光装置および光ディスク装置
JP2004087979A (ja) * 2002-08-28 2004-03-18 Sharp Corp 受光素子およびその製造方法並びに回路内蔵型受光素子
DE102005007358B4 (de) * 2005-02-17 2008-05-08 Austriamicrosystems Ag Lichtempfindliches Bauelement
DE102005025937B4 (de) * 2005-02-18 2009-11-26 Austriamicrosystems Ag Lichtempfindliches Bauelement mit erhöhter Blauempfindlichkeit, Verfahren zur Herstellung und Betriebsverfahren
JP2007317767A (ja) * 2006-05-24 2007-12-06 Matsushita Electric Ind Co Ltd 光半導体装置およびその製造方法
JP2018026536A (ja) * 2016-08-09 2018-02-15 エスアイアイ・セミコンダクタ株式会社 半導体装置の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3081370A (en) * 1961-07-17 1963-03-12 Raytheon Co Solar cells
US3514846A (en) * 1967-11-15 1970-06-02 Bell Telephone Labor Inc Method of fabricating a planar avalanche photodiode
US3601668A (en) * 1969-11-07 1971-08-24 Fairchild Camera Instr Co Surface depletion layer photodevice
JPS4917189A (fr) * 1972-06-02 1974-02-15
US3978509A (en) * 1972-06-02 1976-08-31 U.S. Philips Corporation Photosensitive semiconductor device
US4001864A (en) * 1976-01-30 1977-01-04 Gibbons James F Semiconductor p-n junction solar cell and method of manufacture

Also Published As

Publication number Publication date
FR2363197A1 (fr) 1978-03-24
JPS5326593A (en) 1978-03-11
US4107722A (en) 1978-08-15
IT1118044B (it) 1986-02-24
FR2363197B1 (fr) 1979-05-11
DE2730477A1 (de) 1978-03-02

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Legal Events

Date Code Title Description
MKEX Expiry