CA1083263A - Prefabricated composite metallic heat-transmitting plate unit - Google Patents
Prefabricated composite metallic heat-transmitting plate unitInfo
- Publication number
- CA1083263A CA1083263A CA303,080A CA303080A CA1083263A CA 1083263 A CA1083263 A CA 1083263A CA 303080 A CA303080 A CA 303080A CA 1083263 A CA1083263 A CA 1083263A
- Authority
- CA
- Canada
- Prior art keywords
- heat
- plate unit
- accordance
- metallic
- holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 10
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052802 copper Inorganic materials 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 13
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 150000002739 metals Chemical class 0.000 claims abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical group [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- QLNWXBAGRTUKKI-UHFFFAOYSA-N metacetamol Chemical compound CC(=O)NC1=CC=CC(O)=C1 QLNWXBAGRTUKKI-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 241000736839 Chara Species 0.000 description 1
- 241000518994 Conta Species 0.000 description 1
- 101100536893 Schizosaccharomyces pombe (strain 972 / ATCC 24843) thi9 gene Proteins 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- -1 aluminuw Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Laminated Bodies (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
A PREFABRICATED COMPOSITE METALLIC
HEAT-TRANSMITTING PLATE UNIT
ABSTRACT OF THE DISCLOSURE
A prefabricated composite metallic plate unit for transmitting heat between a heat-absorbing medium having a planar surface such as a heat sink and a body having a planar surface and aubject, during normal operation, to wide temperature excursions and having a predetermined temperature coefficient of expansion, comprises a high-tensile-strength metallic plate member having a temperature coefficient of expansion substantially the same as that of the body and substantially planar opposed surfaces indi-vidually in contact with the planar surface of the body and in contact with the heat sink. The heat-transmitting member is adapted to be supported on the heat sink and to support the body therefrom and has a high tensile strength, for example at least 35 kg/mm2. The heat-transmitting member has a plurality of holes uniformly distributed with respect to its planar surfaces, the aggregate area of such holes being less than about 45% of the total areas of such planar surfaces and the total volume thereof being less than about 45% of the volume of said metallic member.
The holes in the metallic member are filled with a soft metal of the group comprising silver, copper, aluminum and an alloy of any of these three metals and has a heat-transfer coefficient of at least 0.3 cal./cm2/cm/sec./°C. In a preferred embodiment of the invention, the body to be supported is a semiconductor body and the heat-transmitting member is a nickel-iron or nickel-cobalt-iron alloy having a temperature coefficient of expansion of about 5 x 10-6 cm/cm/°C over a temperature range of about 20°C to 400°c.
HEAT-TRANSMITTING PLATE UNIT
ABSTRACT OF THE DISCLOSURE
A prefabricated composite metallic plate unit for transmitting heat between a heat-absorbing medium having a planar surface such as a heat sink and a body having a planar surface and aubject, during normal operation, to wide temperature excursions and having a predetermined temperature coefficient of expansion, comprises a high-tensile-strength metallic plate member having a temperature coefficient of expansion substantially the same as that of the body and substantially planar opposed surfaces indi-vidually in contact with the planar surface of the body and in contact with the heat sink. The heat-transmitting member is adapted to be supported on the heat sink and to support the body therefrom and has a high tensile strength, for example at least 35 kg/mm2. The heat-transmitting member has a plurality of holes uniformly distributed with respect to its planar surfaces, the aggregate area of such holes being less than about 45% of the total areas of such planar surfaces and the total volume thereof being less than about 45% of the volume of said metallic member.
The holes in the metallic member are filled with a soft metal of the group comprising silver, copper, aluminum and an alloy of any of these three metals and has a heat-transfer coefficient of at least 0.3 cal./cm2/cm/sec./°C. In a preferred embodiment of the invention, the body to be supported is a semiconductor body and the heat-transmitting member is a nickel-iron or nickel-cobalt-iron alloy having a temperature coefficient of expansion of about 5 x 10-6 cm/cm/°C over a temperature range of about 20°C to 400°c.
Description
CKaRO~ND 0~ THE INV~NTION
Thi~ invention relates to a new and improved member ror transmltting heat between a heat-6b~0rbing medium and a body 9ub-~ect, during normal oporation, to wide temperature exoursion~ andhaving a predetermined temperature coer~iclent Or e~punslon.
-~..~., In the transfer o~ heat between a heat 9ink and another body, it i~ o~ten desirable or even nec0~ary in certain applica-tions to employ an intermediary metallic member having a tempera-ture coe~icient o~ expansion appro~imately equal to that of th0 body but a relatively high heat-trans~er characteristic. For e~ample, in the ~emiconductor indu~try ths general practice ha~
been to make the semiconductor devices ~rom single-¢rystal silicon.
It is characteristic Or ~he~e device~ that heat is generated in the silicon die when they are put into use by the electrical cur-rent rlowing through them. Ir such hea~ is not conducted awayrrom the die, its temperature will rise to an intolerable level and the device will not operate properly or will undergo complete ~ailure.
In order to conduct the heat away ~rom the 9ilicon die, it has been cu~tomarily soldered to a metal mount which acts as a heat sink. Beoause the temperature o~ both the sili¢on die and the metal mount increase and they are rigidly soldered to each other, the temperature coe~icients Or expansion Or the ~ingle-¢rystal silicon die and the metal heat sink mount must be compatible--that ~9, they must be very close to each other over the temperature range which they e~perience, I~ thi9 oondltion is not achieved, the brittle 8 ilicon die will undergo strain and either rracture to ¢ause device railure or soverely modi~y the ; operating chara¢teristic Or the electrical circuit in the silioon dle to 9uch a dogree as to make it useles~.
Metal alloys which reasonably match the te~perature co-e~ri¢ient Or expansion o~ th~ single-crystal silicon over the tem-perature range o~ 20C to 400c to the required dsgree are a nickel-cobalt-iron alloy, com~ercially availabls under the trademark ~KOVAR~, and AL~OY 42, a prlmarily nickel-iron alloy. U~ortunately, both A . . , . . -,, . ' ; ~. .
alloyQ hRve very poor coe~ficients of heat truns~er and can only be u~3ed for Qilicon die mounting where the power dissipation in the 3ilicon i~ comparatively low. I~ the power dissipation charac-teristics required Or the electronic circuitry incorporated into the ~ilicon die are high, for example power amplifiers, power diode~, and recti~iers, then the above-mentioned nickel-cobalt-iron alloy and ALLOY 42 cannot be used becau~e the temperature rise Or the silicon die will be too high and the semiconductor device will rail.
One metal that doe~ satisfy the heat-transrer and the temperature coe~icient requirement ~or single-crystal silicon i8 molybdenum. However, molybdenum is relatively high in C09t, i8 very di~icult to ~abricate mechanically, and is di~icult to electroplate.
1~ It i9 an ob~ect o~ the invention, there~ore, to provide a new composite metallic heat-transmitting member which overoomes the disadvantages Or the above-described methods of tran~mitting heat between a body having a predetermined temperature coerricient o~ e~pansion and a heat-absorbing medium, such a9 a heat sinkO
It is a ~urther ob~ect of the invention to provids a novel oompo~ite metallic me~ber ror trQnsmitting heat between a heat-ab00rbin~ medium and a bod~ whioh has a temperature coer~i-cient o~ e~pansion appro~imately equal to that o~ the body and a satisractor~ heat-trans~er coerrlclent.
SUMMARY OF TEg INVENTION
~ In accordan¢e with the invention, there is provided a i prerabricated co~po~ite metallic membor ror transmitting heat be-:! tween a heat-absorbing medium ha~ing a planar sur~ace such a8 a heat sink and a body having a planar surrace and sub~ect during normal operation to wide temperaturo e~cur9ions and having a pre-determined temperature coerflcient Or e~pansion which oomprise~ a , ~, , ; 3-~083263 h~gh-tens~le~3trength metalllc plate member having a temperature coe~`ficlent Or e~pQnsion substantlAlly the 9ame as that Or the body, one surra¢e Or said member being adapted to be disposed in contact with the planar ~ur~ace Or the body and the other sur~ace being adapted to be dispossd in conta¢t with the planar sur~ace Or said medium, a plurality of holes e~tending through ~uch mem- :
ber, and a relativsly so~t metallic matsrial ~illin~ such holes having a heat-trans~er coer~icient Or at lea3t ~bout 0.3 cal./cm2/cm~sec /C
For a better understanding Or the present invention, toeether with other and ~urther ob~ects thereof, re~erence is had to the rollowing description, taken in connection with the accom-panying drawing, while its ~cope will be pointed out in the ap-pended claims.
3RIEF DE~CRIPTION OF THE DRAWING
Fig. 1 is a perspective ~iew, partially cut away, o~
a heat-transmitting member embodying the invention; while -Fig. 2 is a perspective view showing the application o~ the heat-transmitting member o~ Fi~. 1 to a power header ~or mounting a power-type semiconductor derice.
D~SCRIPTIO~ OF THB PEEFe~ED ~MBODIME~T
Rererring now to Fi8. 1 o~ the drawing) thero is repre-sented a prerabrioated composite metallic heat-transmitting plate unit comprising a high-tensile-strength metallic me~ber 10 having a temperature coerficient o~ e~pansion substantially the same as that o~ the body with which it i9 associated. As illustratod, the member 10 ha~ opposod sub~tantially parallel planar ~urraces, one adapted to be disposed in oontaot with the planar surrace Or the body and the other disposed to be in contact with a heat 9inko Formed ln the metallic member 10 are a plurality o~ unirormly 1(~83263 distributed hole~ 11 which occupy le~ than ~bout 45~ o~ the total areas of the surrace of the member 10 and 1e~Y than about 4~ o~ the volume o~ the memb~r 10. Each of the hole~ 11 i9 filled with a metallic material having a heat-tranæ~er coe~icient of at le~st about 0~3 cal./cm /cm/sec./ C and i8 pre~erably a sOrt metal of the group compri~ing silver, copper, aluminuw, and an alloy o~ any o~ these metals.
In Figo 2 there i~ illustrated a power header ~or mount-ing a power-type semiconductor devic0 utilizing the heat-tran~mit-ting member Or the inventionO Such header comprises ~ stud 20having an unitary enlarged cylindrical head 21 and Or a material having a relatively high heat-transrer coer~icient, ~uch a~ copper.
~he stud 20 i9 threaded a~ ~hown ~or screwing into any conventional hsat sink. A d~c-shaped member 22 is a heat-transmitting member rabricated in the same manner as the plate member 10 o~ Fig. 1.
It is pre~erably then gold plated and brazed to the head 21 o~
stud 20. A semiconductor device 23 Or the power type, such as a power amplifier or ~ rectifier, i8 then soldered to the member 22, u3ually u9in~ a solder ~uch as a gold-silicon or a gold-tin eutecti¢
alloy~
The power mount~ng device thus described i8 u~ually hermetically sealed by a cup-shaped cover soldered to the peri-phery Or the head 21, the conductive leads rrom the semiconductor devlce 23 extending through the cover. Such sealing cover and
Thi~ invention relates to a new and improved member ror transmltting heat between a heat-6b~0rbing medium and a body 9ub-~ect, during normal oporation, to wide temperature exoursion~ andhaving a predetermined temperature coer~iclent Or e~punslon.
-~..~., In the transfer o~ heat between a heat 9ink and another body, it i~ o~ten desirable or even nec0~ary in certain applica-tions to employ an intermediary metallic member having a tempera-ture coe~icient o~ expansion appro~imately equal to that of th0 body but a relatively high heat-trans~er characteristic. For e~ample, in the ~emiconductor indu~try ths general practice ha~
been to make the semiconductor devices ~rom single-¢rystal silicon.
It is characteristic Or ~he~e device~ that heat is generated in the silicon die when they are put into use by the electrical cur-rent rlowing through them. Ir such hea~ is not conducted awayrrom the die, its temperature will rise to an intolerable level and the device will not operate properly or will undergo complete ~ailure.
In order to conduct the heat away ~rom the 9ilicon die, it has been cu~tomarily soldered to a metal mount which acts as a heat sink. Beoause the temperature o~ both the sili¢on die and the metal mount increase and they are rigidly soldered to each other, the temperature coe~icients Or expansion Or the ~ingle-¢rystal silicon die and the metal heat sink mount must be compatible--that ~9, they must be very close to each other over the temperature range which they e~perience, I~ thi9 oondltion is not achieved, the brittle 8 ilicon die will undergo strain and either rracture to ¢ause device railure or soverely modi~y the ; operating chara¢teristic Or the electrical circuit in the silioon dle to 9uch a dogree as to make it useles~.
Metal alloys which reasonably match the te~perature co-e~ri¢ient Or expansion o~ th~ single-crystal silicon over the tem-perature range o~ 20C to 400c to the required dsgree are a nickel-cobalt-iron alloy, com~ercially availabls under the trademark ~KOVAR~, and AL~OY 42, a prlmarily nickel-iron alloy. U~ortunately, both A . . , . . -,, . ' ; ~. .
alloyQ hRve very poor coe~ficients of heat truns~er and can only be u~3ed for Qilicon die mounting where the power dissipation in the 3ilicon i~ comparatively low. I~ the power dissipation charac-teristics required Or the electronic circuitry incorporated into the ~ilicon die are high, for example power amplifiers, power diode~, and recti~iers, then the above-mentioned nickel-cobalt-iron alloy and ALLOY 42 cannot be used becau~e the temperature rise Or the silicon die will be too high and the semiconductor device will rail.
One metal that doe~ satisfy the heat-transrer and the temperature coe~icient requirement ~or single-crystal silicon i8 molybdenum. However, molybdenum is relatively high in C09t, i8 very di~icult to ~abricate mechanically, and is di~icult to electroplate.
1~ It i9 an ob~ect o~ the invention, there~ore, to provide a new composite metallic heat-transmitting member which overoomes the disadvantages Or the above-described methods of tran~mitting heat between a body having a predetermined temperature coerricient o~ e~pansion and a heat-absorbing medium, such a9 a heat sinkO
It is a ~urther ob~ect of the invention to provids a novel oompo~ite metallic me~ber ror trQnsmitting heat between a heat-ab00rbin~ medium and a bod~ whioh has a temperature coer~i-cient o~ e~pansion appro~imately equal to that o~ the body and a satisractor~ heat-trans~er coerrlclent.
SUMMARY OF TEg INVENTION
~ In accordan¢e with the invention, there is provided a i prerabricated co~po~ite metallic membor ror transmitting heat be-:! tween a heat-absorbing medium ha~ing a planar sur~ace such a8 a heat sink and a body having a planar surrace and sub~ect during normal operation to wide temperaturo e~cur9ions and having a pre-determined temperature coerflcient Or e~pansion which oomprise~ a , ~, , ; 3-~083263 h~gh-tens~le~3trength metalllc plate member having a temperature coe~`ficlent Or e~pQnsion substantlAlly the 9ame as that Or the body, one surra¢e Or said member being adapted to be disposed in contact with the planar ~ur~ace Or the body and the other sur~ace being adapted to be dispossd in conta¢t with the planar sur~ace Or said medium, a plurality of holes e~tending through ~uch mem- :
ber, and a relativsly so~t metallic matsrial ~illin~ such holes having a heat-trans~er coer~icient Or at lea3t ~bout 0.3 cal./cm2/cm~sec /C
For a better understanding Or the present invention, toeether with other and ~urther ob~ects thereof, re~erence is had to the rollowing description, taken in connection with the accom-panying drawing, while its ~cope will be pointed out in the ap-pended claims.
3RIEF DE~CRIPTION OF THE DRAWING
Fig. 1 is a perspective ~iew, partially cut away, o~
a heat-transmitting member embodying the invention; while -Fig. 2 is a perspective view showing the application o~ the heat-transmitting member o~ Fi~. 1 to a power header ~or mounting a power-type semiconductor derice.
D~SCRIPTIO~ OF THB PEEFe~ED ~MBODIME~T
Rererring now to Fi8. 1 o~ the drawing) thero is repre-sented a prerabrioated composite metallic heat-transmitting plate unit comprising a high-tensile-strength metallic me~ber 10 having a temperature coerficient o~ e~pansion substantially the same as that o~ the body with which it i9 associated. As illustratod, the member 10 ha~ opposod sub~tantially parallel planar ~urraces, one adapted to be disposed in oontaot with the planar surrace Or the body and the other disposed to be in contact with a heat 9inko Formed ln the metallic member 10 are a plurality o~ unirormly 1(~83263 distributed hole~ 11 which occupy le~ than ~bout 45~ o~ the total areas of the surrace of the member 10 and 1e~Y than about 4~ o~ the volume o~ the memb~r 10. Each of the hole~ 11 i9 filled with a metallic material having a heat-tranæ~er coe~icient of at le~st about 0~3 cal./cm /cm/sec./ C and i8 pre~erably a sOrt metal of the group compri~ing silver, copper, aluminuw, and an alloy o~ any o~ these metals.
In Figo 2 there i~ illustrated a power header ~or mount-ing a power-type semiconductor devic0 utilizing the heat-tran~mit-ting member Or the inventionO Such header comprises ~ stud 20having an unitary enlarged cylindrical head 21 and Or a material having a relatively high heat-transrer coer~icient, ~uch a~ copper.
~he stud 20 i9 threaded a~ ~hown ~or screwing into any conventional hsat sink. A d~c-shaped member 22 is a heat-transmitting member rabricated in the same manner as the plate member 10 o~ Fig. 1.
It is pre~erably then gold plated and brazed to the head 21 o~
stud 20. A semiconductor device 23 Or the power type, such as a power amplifier or ~ rectifier, i8 then soldered to the member 22, u3ually u9in~ a solder ~uch as a gold-silicon or a gold-tin eutecti¢
alloy~
The power mount~ng device thus described i8 u~ually hermetically sealed by a cup-shaped cover soldered to the peri-phery Or the head 21, the conductive leads rrom the semiconductor devlce 23 extending through the cover. Such sealing cover and
2~ the leads rrom the semiconductor device 23 are not ~hown in the drawing since they ~orm no part o~ the present invention.
Thus, by the u~e of the heat-transmitting member 22 having a temperature coer~icient Or e~pansion appro~i~ating that o~ the semiconductor device 23 and a relatively high heat-transrer coe~ri¢ient, a substantial amount Or heat developed in the semi-~t~
~083Z63 conductor device 23 i9 transrerred throu~h the member 22 to the powar header 20,21, wh~le ths member 22 and the ~emiconductor de-vice 23 e~pand and contract compatibly, avoiding disruptive stress on the ~emiconductor devi¢e 23.
In selecting the material~ for the metallic member 10 and the materials for rilling the holes 11, the ~ollowing charac-teri~tic~ are signiricant:
Te~perature Coe~icient9 Or E~pansion The temperature coef~icientR Or expansion of pertinent materials over the temperature range o~ 20C to 400C in cm/cm/C
are hppro~imately as ~ollows:
Semiconductor silicon ..... 0.. ~................... O.O.... .O. 4.8 x 10 Above-mentioned nickel-cobalt-iron alloy ................ 0O~ 4.9 ~ 10 6 ALLOY 42 Ø. O.... OO......... ~.. O........ .O..... O.... 502 x 10 6 Silver ...... ,.. 0.O....................... 19.7 ~ 10-6 Copper ........... 0.......... O.. O..... O.~ 16.4 x 10 6 Composite member 10: ~ :
ALLOY 42 and 30% ¢opper by volume ........ 0,0.. O 7.0 2 10 6 Above-mentioned nickel-cobalt-iron alloy and -6 30% copper ~D~O~ OO~O~O~ 6.5 x 10 Thus, while copper and ~ilver havs high heat-trRns~er co-er~icient~ as discussed below, their temperature coe~ricient9 Or expan3ion di~rer 90 widely ~rom those o~ silicon that, ir attached to the silicon die to ab~orb heat there~rom, the adverse e~ects on the silicon die described above would re~ult. On the other hand, members o~ the above-mentloned nickel-cobalt-iron alloy or ALLOY 42, with copper-filled holes described above, have temperature coe~icient~ o~ e~pan~ion closely matching those o~ silicon, 80 that the use Or the composite member 22 avoids the adver~e e~ects on the silicon die 23 as its temperature varie9 over a wide rangeO
He~t-'rran~fer Co~r~icients -The heat-tranqrsr coe~ficients Or pertinent materials over the temperature range 20C to 400c in cal./c~2/cm~ec./C
are as ~ollow~:
Above-mentioned nickel-cobalt-iron alloy . D ~0... ....Ø04 ALLOY 42 ~..... 0OO........................... ..~ .O... O.... ...Ø035 Silver ..... O.............. c.~.. OOO.. ~... O D ~............. 0O 0099 Copper ~Ø. O.. O.O... ~....................... O.O.O.O........ ~O. 0.90 Composite:
ALLOY 42 and 30% copper .~.O....... ...Ø... O..... ..O 0.25 Above-mentioned nickel-cobalt-iron alloy and 30~ c opper O O ........ ~ ... ....O ... O ... O . 24 Thus, while the above-mentioned nickel-cobalt-iron alloy and ALLOY 42 have temperature coe~ficient~ of e~pansion closely matching those Or silicon, their heat--tranArer coerficient~ are only about 4~ Or those of ~ilver and copper and quite inadequate to di~sipate heat ~rom the ~ilicon die 23 over an extended tempera-ture range i~ used alone. However, such coe~ficient of the com-posite member 22 o~ ALLOY 42 and 30% copper and o~ the above-mentioned nickel-cobalt-iron alloy and 30% copper have heat-trans-rer coe~icients ~i~ to ~even times tho~e o~ the above-mentioned nickel-cobalt-iron alloy and ALLOY 42 alone and adequate for all usual applications, The heat-trans~er member 10 may be ~ormed by any of several well known methods. For example, after holes 11 have been drilled in the member 10, they may be filled with coppsr or silver by electrolytic deposition. Alternatively, the member 10 may be ~ormed into con~entional e~panded metal by cutting parallel short slits in the member and pulling it to form the slits into openings which are then ~illed with ~ilver, copper, or the like.
~ -7-In thi~ form of the invention, it i~ pre~erable to laminata two ~heets to ~orm the member 10 such that the direction o~ slits in the two sheets are approximatsly perpendicular to each other.
. .
.;
.~
Thus, by the u~e of the heat-transmitting member 22 having a temperature coer~icient Or e~pansion appro~i~ating that o~ the semiconductor device 23 and a relatively high heat-transrer coe~ri¢ient, a substantial amount Or heat developed in the semi-~t~
~083Z63 conductor device 23 i9 transrerred throu~h the member 22 to the powar header 20,21, wh~le ths member 22 and the ~emiconductor de-vice 23 e~pand and contract compatibly, avoiding disruptive stress on the ~emiconductor devi¢e 23.
In selecting the material~ for the metallic member 10 and the materials for rilling the holes 11, the ~ollowing charac-teri~tic~ are signiricant:
Te~perature Coe~icient9 Or E~pansion The temperature coef~icientR Or expansion of pertinent materials over the temperature range o~ 20C to 400C in cm/cm/C
are hppro~imately as ~ollows:
Semiconductor silicon ..... 0.. ~................... O.O.... .O. 4.8 x 10 Above-mentioned nickel-cobalt-iron alloy ................ 0O~ 4.9 ~ 10 6 ALLOY 42 Ø. O.... OO......... ~.. O........ .O..... O.... 502 x 10 6 Silver ...... ,.. 0.O....................... 19.7 ~ 10-6 Copper ........... 0.......... O.. O..... O.~ 16.4 x 10 6 Composite member 10: ~ :
ALLOY 42 and 30% ¢opper by volume ........ 0,0.. O 7.0 2 10 6 Above-mentioned nickel-cobalt-iron alloy and -6 30% copper ~D~O~ OO~O~O~ 6.5 x 10 Thus, while copper and ~ilver havs high heat-trRns~er co-er~icient~ as discussed below, their temperature coe~ricient9 Or expan3ion di~rer 90 widely ~rom those o~ silicon that, ir attached to the silicon die to ab~orb heat there~rom, the adverse e~ects on the silicon die described above would re~ult. On the other hand, members o~ the above-mentloned nickel-cobalt-iron alloy or ALLOY 42, with copper-filled holes described above, have temperature coe~icient~ o~ e~pan~ion closely matching those o~ silicon, 80 that the use Or the composite member 22 avoids the adver~e e~ects on the silicon die 23 as its temperature varie9 over a wide rangeO
He~t-'rran~fer Co~r~icients -The heat-tranqrsr coe~ficients Or pertinent materials over the temperature range 20C to 400c in cal./c~2/cm~ec./C
are as ~ollow~:
Above-mentioned nickel-cobalt-iron alloy . D ~0... ....Ø04 ALLOY 42 ~..... 0OO........................... ..~ .O... O.... ...Ø035 Silver ..... O.............. c.~.. OOO.. ~... O D ~............. 0O 0099 Copper ~Ø. O.. O.O... ~....................... O.O.O.O........ ~O. 0.90 Composite:
ALLOY 42 and 30% copper .~.O....... ...Ø... O..... ..O 0.25 Above-mentioned nickel-cobalt-iron alloy and 30~ c opper O O ........ ~ ... ....O ... O ... O . 24 Thus, while the above-mentioned nickel-cobalt-iron alloy and ALLOY 42 have temperature coe~ficient~ of e~pansion closely matching those Or silicon, their heat--tranArer coerficient~ are only about 4~ Or those of ~ilver and copper and quite inadequate to di~sipate heat ~rom the ~ilicon die 23 over an extended tempera-ture range i~ used alone. However, such coe~ficient of the com-posite member 22 o~ ALLOY 42 and 30% copper and o~ the above-mentioned nickel-cobalt-iron alloy and 30% copper have heat-trans-rer coe~icients ~i~ to ~even times tho~e o~ the above-mentioned nickel-cobalt-iron alloy and ALLOY 42 alone and adequate for all usual applications, The heat-trans~er member 10 may be ~ormed by any of several well known methods. For example, after holes 11 have been drilled in the member 10, they may be filled with coppsr or silver by electrolytic deposition. Alternatively, the member 10 may be ~ormed into con~entional e~panded metal by cutting parallel short slits in the member and pulling it to form the slits into openings which are then ~illed with ~ilver, copper, or the like.
~ -7-In thi~ form of the invention, it i~ pre~erable to laminata two ~heets to ~orm the member 10 such that the direction o~ slits in the two sheets are approximatsly perpendicular to each other.
. .
.;
.~
Claims (11)
1. A prefabricated composite metallic plate unit for transmitting heat between a heat-absorbing medium having a planar surface and a body having a planar surface and subject during normal operation to wide temperature excursions and having a pre-determined temperature coefficient of expansion, said plate unit comprising: a high-tensile-strength metallic plate member having a temperature coefficient of expansion substantially the same as that of the body, one surface of said member being adapted to be disposed in contact with the planar surface of the body and the other surface being adapted to be disposed in contact with the planar surface of said medium; a plurality of holes extending through said member; and a relatively soft metallic material filling said holes having a heat-transfer coefficient of at least about 0.3 cal./cm2/cm/sec./°C.
2. A heat-transmitting plate unit in accordance with claim 1 in which the heat-absorbing medium is a heat sink.
3. A heat-transmitting plate unit in accordance with claim 1 in which the plate unit is adapterd to be supported on the heat-absorbing medium and to support the body therefrom.
4. A heat-transmitting plate unit in accordance with claim 1 in which the metallic member has a tensile strength of at least 35 kg/mm2.
5. A heat-transmitting plate unit in accordance with claim 1 in which the material filling said holes is a soft metal of the group consisting of silver, copper, and aluminum, and an alloy of any of these metals.
6. A heat-transmitting plate unit in accordance with claim 1 in which said plurality of holes in said metallic member are uniformly distributed with respect to its planar surfaces and filled with said metallic material.
7. A heat-transmitting plate unit in accordance with claim 6 in which the aggregate area of all the holes at the planar surfaces of the metallic member is less than about 45% of the total areas of such planar surfaces.
8. A heat-transmitting plate unit in accordance with claim 6 in which the total volume of said holes is less than about 45% of the volume of said metallic member.
9. A heat-transmitting plate unit in accordance with claim 1 in which the body to be supported is a semiconductor body and the member is a nickel-iron alloy having a temperature coef-ficient of expansion of about 5 x 10 6 cm/cm/°C over a temperature range of about 20°C to 400°C.
10. A heat-transmitting plate unit in accordance with claim 1 in which the body to be supported is a semiconductor body and the member is a nickel-cobalt-iron alloy having a temperature coefficient of expansion of about 5 x 10-6 cm/cm/°C over a tem-perature range of about 20°C to 400°C.
11. A heat-transmitting plate unit in accordance with claim 1 in which said relatively sort metallic material filling said holes is electrolytically deposited copper.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81108477A | 1977-06-29 | 1977-06-29 | |
| US811,084 | 1985-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1083263A true CA1083263A (en) | 1980-08-05 |
Family
ID=25205506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA303,080A Expired CA1083263A (en) | 1977-06-29 | 1978-05-11 | Prefabricated composite metallic heat-transmitting plate unit |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5412569A (en) |
| CA (1) | CA1083263A (en) |
| DE (1) | DE2826252A1 (en) |
| FR (1) | FR2396263A1 (en) |
| GB (1) | GB1588477A (en) |
| IT (1) | IT1105422B (en) |
| NL (1) | NL7806751A (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4283464A (en) * | 1979-05-08 | 1981-08-11 | Norman Hascoe | Prefabricated composite metallic heat-transmitting plate unit |
| SE420964B (en) * | 1980-03-27 | 1981-11-09 | Asea Ab | COMPOSITION MATERIAL AND SET FOR ITS MANUFACTURING |
| US4427993A (en) * | 1980-11-21 | 1984-01-24 | General Electric Company | Thermal stress relieving bimetallic plate |
| US4396936A (en) * | 1980-12-29 | 1983-08-02 | Honeywell Information Systems, Inc. | Integrated circuit chip package with improved cooling means |
| FR2511193A1 (en) * | 1981-08-07 | 1983-02-11 | Thomson Csf | Laminated support for cooling semiconductor - has three metal layers including one rigid layer to avoid bi-metallic bending with changing temp. |
| US5039335A (en) * | 1988-10-21 | 1991-08-13 | Texas Instruments Incorporated | Composite material for a circuit system and method of making |
| CA1316303C (en) * | 1988-12-23 | 1993-04-20 | Thijs Eerkes | Composite structure |
| JPH02231751A (en) * | 1989-03-03 | 1990-09-13 | Sumitomo Special Metals Co Ltd | Material for lead frame |
| US5310520A (en) * | 1993-01-29 | 1994-05-10 | Texas Instruments Incorporated | Circuit system, a composite material for use therein, and a method of making the material |
| KR960000706B1 (en) * | 1993-07-12 | 1996-01-11 | 한국전기통신공사 | Power-device type plastic package structure and the |
| WO1998020549A1 (en) * | 1996-11-08 | 1998-05-14 | W.L. Gore & Associates, Inc. | Use of variable perforation density in copper layer to control cte |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL183243C (en) * | 1953-11-30 | Metallgesellschaft Ag | PROCEDURE FOR APPLYING PHOSPHATE COATINGS ON METAL SURFACES. | |
| US3296501A (en) * | 1962-11-07 | 1967-01-03 | Westinghouse Electric Corp | Metallic ceramic composite contacts for semiconductor devices |
| GB1004020A (en) * | 1964-04-24 | 1965-09-08 | Standard Telephones Cables Ltd | Improvements in or relating to the mounting of electrical components |
| US3368112A (en) * | 1964-12-18 | 1968-02-06 | Navy Usa | Shielding of electrical circuits by metal deposition |
| US3928907A (en) * | 1971-11-18 | 1975-12-30 | John Chisholm | Method of making thermal attachment to porous metal surfaces |
| JPS5039065A (en) * | 1973-08-08 | 1975-04-10 | ||
| FR2305025A1 (en) * | 1975-03-21 | 1976-10-15 | Thomson Csf | Mount and heat sink for semiconductor - has low thermal resistance and is sandwich of molybdenum, beryllium oxide, beryllium, and gold |
-
1978
- 1978-05-11 CA CA303,080A patent/CA1083263A/en not_active Expired
- 1978-05-25 GB GB22253/78A patent/GB1588477A/en not_active Expired
- 1978-06-09 FR FR7817339A patent/FR2396263A1/en active Granted
- 1978-06-13 DE DE19782826252 patent/DE2826252A1/en not_active Ceased
- 1978-06-14 JP JP7201878A patent/JPS5412569A/en active Pending
- 1978-06-22 IT IT49996/78A patent/IT1105422B/en active
- 1978-06-22 NL NL7806751A patent/NL7806751A/en active Search and Examination
Also Published As
| Publication number | Publication date |
|---|---|
| NL7806751A (en) | 1979-01-03 |
| JPS5412569A (en) | 1979-01-30 |
| FR2396263A1 (en) | 1979-01-26 |
| GB1588477A (en) | 1981-04-23 |
| DE2826252A1 (en) | 1979-01-04 |
| IT1105422B (en) | 1985-11-04 |
| IT7849996A0 (en) | 1978-06-22 |
| FR2396263B1 (en) | 1984-04-13 |
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| MKEX | Expiry |