CA1076460A - Cadmium telluride compensated with magnesium or beryllium - Google Patents
Cadmium telluride compensated with magnesium or berylliumInfo
- Publication number
- CA1076460A CA1076460A CA254,751A CA254751A CA1076460A CA 1076460 A CA1076460 A CA 1076460A CA 254751 A CA254751 A CA 254751A CA 1076460 A CA1076460 A CA 1076460A
- Authority
- CA
- Canada
- Prior art keywords
- chloride
- magnesium
- beryllium
- cadmium
- cadmium telluride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011777 magnesium Substances 0.000 title claims abstract description 24
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 229910052749 magnesium Inorganic materials 0.000 title claims abstract description 23
- 229910052790 beryllium Inorganic materials 0.000 title claims abstract description 19
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 title claims abstract description 19
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 239000002019 doping agent Substances 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 12
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 10
- 229910001629 magnesium chloride Inorganic materials 0.000 claims description 5
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims 8
- LWBPNIJBHRISSS-UHFFFAOYSA-L beryllium dichloride Chemical compound Cl[Be]Cl LWBPNIJBHRISSS-UHFFFAOYSA-L 0.000 claims 8
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims 8
- 229910001627 beryllium chloride Inorganic materials 0.000 claims 4
- 239000011592 zinc chloride Substances 0.000 claims 4
- 235000005074 zinc chloride Nutrition 0.000 claims 4
- 229910052793 cadmium Inorganic materials 0.000 abstract description 14
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 229910052725 zinc Inorganic materials 0.000 abstract description 3
- 239000011701 zinc Substances 0.000 abstract description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 2
- 229910052714 tellurium Inorganic materials 0.000 description 9
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 230000032258 transport Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910000925 Cd alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- WZGKIRHYWDCEKP-UHFFFAOYSA-N cadmium magnesium Chemical compound [Mg].[Cd] WZGKIRHYWDCEKP-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/102—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type for infrared and ultraviolet radiation
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/32—Non-oxide glass compositions, e.g. binary or ternary halides, sulfides or nitrides of germanium, selenium or tellurium
- C03C3/321—Chalcogenide glasses, e.g. containing S, Se, Te
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7519262A FR2314759A1 (fr) | 1975-06-19 | 1975-06-19 | Tellurure de cadmium compense au magnesium ou au beryllium eventuellement dope et ses applications |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1076460A true CA1076460A (en) | 1980-04-29 |
Family
ID=9156769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA254,751A Expired CA1076460A (en) | 1975-06-19 | 1976-06-14 | Cadmium telluride compensated with magnesium or beryllium |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS522896A (enrdf_load_stackoverflow) |
| BE (1) | BE842720A (enrdf_load_stackoverflow) |
| CA (1) | CA1076460A (enrdf_load_stackoverflow) |
| DE (1) | DE2626841A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2314759A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1498374A (enrdf_load_stackoverflow) |
| NL (1) | NL7606595A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0261647A3 (en) * | 1986-09-26 | 1989-08-16 | Nippon Mining Company Limited | High resistivity cdte crystal and process for producing the same |
| FR2703696B1 (fr) * | 1993-04-08 | 1995-06-09 | Eurorad 2 6 Sarl | Procede d'obtention d'un materiau cristallin dope a base de tellure et de cadmium et detecteur comportant un tel materiau. |
| GB2308356A (en) * | 1995-12-19 | 1997-06-25 | Heatvision Technics Corp | Processing complex semiconductors |
| FR2836931B1 (fr) * | 2002-03-05 | 2004-04-30 | Eurorad 2 6 | PROCEDE DE PRODUCTION DE CRISTAUX CdXTe SEMI-CONDUCTEURS A HAUTE RESISTIVITE ET MATERIAU CRISTALLIN RESULTANT |
-
1975
- 1975-06-19 FR FR7519262A patent/FR2314759A1/fr active Granted
-
1976
- 1976-06-04 GB GB23309/76A patent/GB1498374A/en not_active Expired
- 1976-06-09 BE BE167728A patent/BE842720A/xx unknown
- 1976-06-14 CA CA254,751A patent/CA1076460A/en not_active Expired
- 1976-06-15 DE DE19762626841 patent/DE2626841A1/de not_active Withdrawn
- 1976-06-17 NL NL7606595A patent/NL7606595A/xx not_active Application Discontinuation
- 1976-06-18 JP JP51072104A patent/JPS522896A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL7606595A (nl) | 1976-12-21 |
| FR2314759B1 (enrdf_load_stackoverflow) | 1980-05-09 |
| FR2314759A1 (fr) | 1977-01-14 |
| JPS522896A (en) | 1977-01-10 |
| BE842720A (fr) | 1976-10-01 |
| DE2626841A1 (de) | 1976-12-30 |
| GB1498374A (en) | 1978-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Grabmaier et al. | Properties of Pure and Doped Bi12GeO2oand Bi12SiO20 Crystals | |
| Triboulet et al. | Undoped high‐resistivity cadmium telluride for nuclear radiation detectors | |
| Jones et al. | The electrical properties of zinc selenide | |
| US8070987B2 (en) | Compositions of doped, co-doped and tri-doped semiconductor materials | |
| US2953529A (en) | Semiconductive radiation-sensitive device | |
| CA1076460A (en) | Cadmium telluride compensated with magnesium or beryllium | |
| Itoga et al. | Electrical resistivity, hall effect and optical absorption in TlS, TlS0· 5Se0· 5 and TlSe | |
| Sobon et al. | Growth and properties of lanthanum oxysulfide crystals | |
| US4277303A (en) | Getter for melt-grown scintillator ingot and method for growing the ingot | |
| Sonomura et al. | Composition dependences of the energy gap and the green‐band emission peak for the Al x Ga1− x P ternary system | |
| US4341654A (en) | Getter for melt-grown scintillator ingot | |
| Cockayne et al. | The Czochralski growth of gallium antimonide single crystals under reducing conditions | |
| Kuriyama et al. | Crystal growth and characterization of the filled tetrahedral semiconductor LiZnP | |
| GB827724A (en) | Improvements in or relating to thermoelectric heat pumps | |
| US4586785A (en) | Sodium iodide, light pipe | |
| JP4353893B2 (ja) | 放射線検出器及び放射線検出器の製造方法 | |
| Gentile et al. | A thermal annealing procedure for the reduction of 10.6 μm optical losses in CdTe | |
| US4449780A (en) | Light pipe, laser window and charge stock therefor | |
| US3714057A (en) | Iodide activated thallium chloride scintillator | |
| US4664744A (en) | Process for the production of bismuth germanate monocrystals with a high scintillation response | |
| DE2422251C2 (de) | Verfahren zur Herstellung eines dotierten Cadmiumtellurid-Einkristalls | |
| CZ300221B6 (cs) | Zpusob prípravy wolframanového monokrystalu | |
| Moser | Equilibrium Properties of Solid Solutions of Copper Ions in Large AgCl Crystals | |
| Sabharwal et al. | Effect of impurities on scintillation-optical and thermoluminescent properties of NaI (Tl) | |
| US3542608A (en) | Method for stimulating the drift of lithium through germanium crystals |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |