CA1072913A - Device for providing high-intensity ion or electron beam - Google Patents
Device for providing high-intensity ion or electron beamInfo
- Publication number
- CA1072913A CA1072913A CA275,725A CA275725A CA1072913A CA 1072913 A CA1072913 A CA 1072913A CA 275725 A CA275725 A CA 275725A CA 1072913 A CA1072913 A CA 1072913A
- Authority
- CA
- Canada
- Prior art keywords
- cathode
- auxiliary electrode
- work
- improved device
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 9
- 238000010894 electron beam technology Methods 0.000 title description 5
- 239000000463 material Substances 0.000 claims abstract description 31
- 229910052770 Uranium Inorganic materials 0.000 claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 229910052778 Plutonium Inorganic materials 0.000 claims abstract description 5
- 229910052776 Thorium Inorganic materials 0.000 claims abstract 3
- 239000007789 gas Substances 0.000 claims description 19
- 239000010406 cathode material Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 9
- 230000006872 improvement Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000003779 heat-resistant material Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims 3
- 241001663154 Electron Species 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 15
- 239000010408 film Substances 0.000 abstract description 5
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000605 extraction Methods 0.000 abstract description 2
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 abstract description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052743 krypton Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 240000007124 Brassica oleracea Species 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/684,418 US4046666A (en) | 1976-05-07 | 1976-05-07 | Device for providing high-intensity ion or electron beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1072913A true CA1072913A (en) | 1980-03-04 |
Family
ID=24747977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA275,725A Expired CA1072913A (en) | 1976-05-07 | 1977-04-06 | Device for providing high-intensity ion or electron beam |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4046666A (OSRAM) |
| JP (1) | JPS5914218B2 (OSRAM) |
| CA (1) | CA1072913A (OSRAM) |
| DE (1) | DE2720424A1 (OSRAM) |
| FR (1) | FR2350687A1 (OSRAM) |
| GB (1) | GB1559430A (OSRAM) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4346330A (en) * | 1980-04-14 | 1982-08-24 | Thermo Electron Corporation | Laser generated high electron density source |
| FR2494487A1 (fr) * | 1980-11-14 | 1982-05-21 | Kreindel July | Source d'electrons et d'ions |
| US4377773A (en) * | 1980-12-12 | 1983-03-22 | The United States Of America As Represented By The Department Of Energy | Negative ion source with hollow cathode discharge plasma |
| US4416755A (en) * | 1981-04-03 | 1983-11-22 | Xerox Corporation | Apparatus and method for producing semiconducting films |
| JPS60164724A (ja) * | 1984-02-07 | 1985-08-27 | Seiko Epson Corp | 電気光学装置 |
| US4560462A (en) * | 1984-06-22 | 1985-12-24 | Westinghouse Electric Corp. | Apparatus for coating nuclear fuel pellets with a burnable absorber |
| DE3503398A1 (de) * | 1985-02-01 | 1986-08-07 | W.C. Heraeus Gmbh, 6450 Hanau | Sputteranlage zum reaktiven beschichten eines substrates mit hartstoffen |
| JPS6258546A (ja) * | 1985-09-06 | 1987-03-14 | Ulvac Corp | 熱陰極型イオン源 |
| JPH0772349B2 (ja) * | 1987-05-12 | 1995-08-02 | 住友電気工業株式会社 | 大面積化合物薄膜の作製方法および装置 |
| US4885070A (en) * | 1988-02-12 | 1989-12-05 | Leybold Aktiengesellschaft | Method and apparatus for the application of materials |
| US5225057A (en) * | 1988-02-08 | 1993-07-06 | Optical Coating Laboratory, Inc. | Process for depositing optical films on both planar and non-planar substrates |
| US4851095A (en) * | 1988-02-08 | 1989-07-25 | Optical Coating Laboratory, Inc. | Magnetron sputtering apparatus and process |
| US5798027A (en) * | 1988-02-08 | 1998-08-25 | Optical Coating Laboratory, Inc. | Process for depositing optical thin films on both planar and non-planar substrates |
| US5618388A (en) * | 1988-02-08 | 1997-04-08 | Optical Coating Laboratory, Inc. | Geometries and configurations for magnetron sputtering apparatus |
| JPH02163368A (ja) * | 1988-12-15 | 1990-06-22 | Matsushita Electric Ind Co Ltd | スパッタリング装置 |
| DE19705884A1 (de) * | 1997-02-15 | 1998-08-20 | Leybold Ag | Plasma-Zündvorrichtung |
| US6402904B1 (en) | 2001-03-16 | 2002-06-11 | 4 Wave, Inc. | System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signal |
| US6679976B2 (en) | 2001-03-16 | 2004-01-20 | 4Wave, Inc. | System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals |
| US8552632B2 (en) * | 2002-03-20 | 2013-10-08 | Copytele, Inc. | Active matrix phosphor cold cathode display |
| US8691064B2 (en) | 2007-07-09 | 2014-04-08 | Raytheon Canada Limited | Sputter-enhanced evaporative deposition apparatus and method |
| US9030659B2 (en) | 2013-07-23 | 2015-05-12 | Massachusetts Institute Of Technology | Spark-induced breakdown spectroscopy electrode assembly |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1760454A (en) * | 1922-07-24 | 1930-05-27 | Westinghouse Lamp Co | Manufacture of electron-emitting devices and the like |
| US1821238A (en) * | 1927-07-20 | 1931-09-01 | Westinghouse Lamp Co | Rectifier |
| US1894946A (en) * | 1929-08-19 | 1933-01-24 | Siemens Ag | Method for activating glowing cathodes or the like |
| BE632434A (OSRAM) * | 1962-06-08 | |||
| US3348092A (en) * | 1965-01-04 | 1967-10-17 | Gen Electric | Electron discharge device having a barium dispensing anode structure |
| DE1251876B (OSRAM) * | 1965-12-23 | |||
| US3467878A (en) * | 1966-06-27 | 1969-09-16 | Gen Electric | Electron discharge device with arrangement for replenishing emissive material on a smooth cathode surface |
| US3507774A (en) * | 1967-06-02 | 1970-04-21 | Nat Res Corp | Low energy sputtering apparatus for operation below one micron pressure |
| US3616919A (en) * | 1969-03-26 | 1971-11-02 | Precision Valve Corp | Water purifier |
-
1976
- 1976-05-07 US US05/684,418 patent/US4046666A/en not_active Expired - Lifetime
-
1977
- 1977-04-06 CA CA275,725A patent/CA1072913A/en not_active Expired
- 1977-04-07 GB GB14727/77A patent/GB1559430A/en not_active Expired
- 1977-05-02 JP JP52050034A patent/JPS5914218B2/ja not_active Expired
- 1977-05-06 DE DE19772720424 patent/DE2720424A1/de not_active Ceased
- 1977-05-06 FR FR7713952A patent/FR2350687A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2350687A1 (fr) | 1977-12-02 |
| FR2350687B1 (OSRAM) | 1981-12-18 |
| DE2720424A1 (de) | 1977-11-24 |
| US4046666A (en) | 1977-09-06 |
| GB1559430A (en) | 1980-01-16 |
| JPS5914218B2 (ja) | 1984-04-03 |
| JPS52135995A (en) | 1977-11-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |