CA1068411A - Power thyristor - Google Patents

Power thyristor

Info

Publication number
CA1068411A
CA1068411A CA266,553A CA266553A CA1068411A CA 1068411 A CA1068411 A CA 1068411A CA 266553 A CA266553 A CA 266553A CA 1068411 A CA1068411 A CA 1068411A
Authority
CA
Canada
Prior art keywords
contact
semiconductor
semiconductor layer
turn
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA266,553A
Other languages
English (en)
French (fr)
Inventor
Masahiko Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of CA1068411A publication Critical patent/CA1068411A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electronic Switches (AREA)
CA266,553A 1976-02-12 1976-11-25 Power thyristor Expired CA1068411A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1420076A JPS5297684A (en) 1976-02-12 1976-02-12 Semiconductor element

Publications (1)

Publication Number Publication Date
CA1068411A true CA1068411A (en) 1979-12-18

Family

ID=11854463

Family Applications (1)

Application Number Title Priority Date Filing Date
CA266,553A Expired CA1068411A (en) 1976-02-12 1976-11-25 Power thyristor

Country Status (8)

Country Link
US (1) US4338617A (US08197722-20120612-C00042.png)
JP (1) JPS5297684A (US08197722-20120612-C00042.png)
CA (1) CA1068411A (US08197722-20120612-C00042.png)
CH (1) CH612795A5 (US08197722-20120612-C00042.png)
DE (2) DE2659909C2 (US08197722-20120612-C00042.png)
FR (1) FR2341204A1 (US08197722-20120612-C00042.png)
GB (3) GB1578759A (US08197722-20120612-C00042.png)
SE (2) SE431697B (US08197722-20120612-C00042.png)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL182796C (nl) * 1978-03-20 1988-05-16 Monsanto Co Werkwijze voor het recirculeren van waterstof bij de bereiding van ammoniak.
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置
JPS6043032B2 (ja) * 1978-09-14 1985-09-26 株式会社日立製作所 ゲートターンオフサイリスタ
JPS6019147B2 (ja) * 1979-01-24 1985-05-14 株式会社日立製作所 ゲ−ト・タ−ン・オフ・サイリスタ
US4295059A (en) * 1979-03-30 1981-10-13 General Electric Company High gain latching Darlington transistor
JPS60250670A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体装置
JP6447028B2 (ja) * 2014-11-10 2019-01-09 株式会社デンソー ダイオード
JP6517341B2 (ja) 2015-07-03 2019-05-22 ミライアル株式会社 基板収納容器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1413219A (fr) * 1963-09-03 1965-10-08 Gen Electric Perfectionnement aux semiconducteurs de commutation
CH474154A (de) * 1967-02-10 1969-06-15 Licentia Gmbh Halbleiterbauelement
CA845885A (en) * 1967-08-21 1970-06-30 E. Burke Donald Semiconductor switching device
US3619652A (en) * 1969-03-10 1971-11-09 Integrated Motorcontrol Inc Motor control device
US3590339A (en) * 1970-01-30 1971-06-29 Westinghouse Electric Corp Gate controlled switch transistor drive integrated circuit (thytran)
GB1303338A (US08197722-20120612-C00042.png) * 1970-10-06 1973-01-17
JPS5118811B2 (US08197722-20120612-C00042.png) * 1972-08-01 1976-06-12
DE2310570C3 (de) * 1973-03-02 1980-08-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines überkopfzündfesten Thyristors
JPS5849104B2 (ja) * 1976-01-12 1983-11-01 三菱電機株式会社 半導体スイツチ

Also Published As

Publication number Publication date
GB1578758A (en) 1980-11-12
SE7710046L (sv) 1977-09-07
US4338617A (en) 1982-07-06
SE431697B (sv) 1984-02-20
DE2659909A1 (de) 1977-11-03
FR2341204A1 (fr) 1977-09-09
DE2659909C2 (de) 1982-11-18
FR2341204B1 (US08197722-20120612-C00042.png) 1982-08-20
JPS5297684A (en) 1977-08-16
GB1578759A (en) 1980-11-12
DE2653432A1 (de) 1977-08-25
SE7613161L (sv) 1977-08-13
GB1578760A (en) 1980-11-12
CH612795A5 (US08197722-20120612-C00042.png) 1979-08-15

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