CA1065746A - A1n masking for selective etching of sapphire - Google Patents

A1n masking for selective etching of sapphire

Info

Publication number
CA1065746A
CA1065746A CA268,799A CA268799A CA1065746A CA 1065746 A CA1065746 A CA 1065746A CA 268799 A CA268799 A CA 268799A CA 1065746 A CA1065746 A CA 1065746A
Authority
CA
Canada
Prior art keywords
sapphire
etching
aln
al2o3
aln film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA268,799A
Other languages
English (en)
French (fr)
Inventor
Richard F. Rutz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of CA1065746A publication Critical patent/CA1065746A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D15/00—Component parts of recorders for measuring arrangements not specially adapted for a specific variable
    • G01D15/16—Recording elements transferring recording material, e.g. ink, to the recording surface
    • G01D15/18—Nozzles emitting recording material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Drying Of Semiconductors (AREA)
CA268,799A 1975-12-31 1976-12-29 A1n masking for selective etching of sapphire Expired CA1065746A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/645,740 US4008111A (en) 1975-12-31 1975-12-31 AlN masking for selective etching of sapphire

Publications (1)

Publication Number Publication Date
CA1065746A true CA1065746A (en) 1979-11-06

Family

ID=24590278

Family Applications (1)

Application Number Title Priority Date Filing Date
CA268,799A Expired CA1065746A (en) 1975-12-31 1976-12-29 A1n masking for selective etching of sapphire

Country Status (7)

Country Link
US (1) US4008111A (OSRAM)
JP (1) JPS5285098A (OSRAM)
CA (1) CA1065746A (OSRAM)
DE (1) DE2659041A1 (OSRAM)
FR (1) FR2337115A1 (OSRAM)
GB (1) GB1555037A (OSRAM)
IT (1) IT1123675B (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4052251A (en) * 1976-03-02 1977-10-04 Rca Corporation Method of etching sapphire utilizing sulfur hexafluoride
US4106975A (en) * 1977-06-30 1978-08-15 International Business Machines Corporation Process for etching holes
US4132586A (en) * 1977-12-20 1979-01-02 International Business Machines Corporation Selective dry etching of substrates
US4152182A (en) * 1978-05-15 1979-05-01 International Business Machines Corporation Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
US4318026A (en) * 1980-04-30 1982-03-02 Rca Corporation Method of making a grid for a cathode-ray tube electron gun
US4357202A (en) * 1981-06-12 1982-11-02 International Business Machines Corporation Refractory oxide fabrication
JPS6019835A (ja) * 1983-07-15 1985-02-01 Kubota Ltd 走行式沈砂掻揚機
US5901425A (en) * 1996-08-27 1999-05-11 Topaz Technologies Inc. Inkjet print head apparatus
US6451216B1 (en) * 1997-07-15 2002-09-17 Silverbrook Research Pty Ltd Method of manufacture of a thermal actuated ink jet printer
US6555891B1 (en) 2000-10-17 2003-04-29 International Business Machines Corporation SOI hybrid structure with selective epitaxial growth of silicon
FR2859488B1 (fr) * 2003-09-10 2006-02-17 Centre Nat Rech Scient Procede de fabrication d'au moins une cavite dans un materiau
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3743552A (en) * 1970-01-30 1973-07-03 North American Rockwell Process for coplanar semiconductor structure
US3753775A (en) * 1971-03-01 1973-08-21 Rca Corp Chemical polishing of sapphire
JPS4995592A (OSRAM) * 1973-01-12 1974-09-10
US3899363A (en) * 1974-06-28 1975-08-12 Ibm Method and device for reducing sidewall conduction in recessed oxide pet arrays

Also Published As

Publication number Publication date
JPS5614611B2 (OSRAM) 1981-04-06
DE2659041A1 (de) 1977-07-14
JPS5285098A (en) 1977-07-15
GB1555037A (en) 1979-11-07
FR2337115B1 (OSRAM) 1980-10-17
US4008111A (en) 1977-02-15
IT1123675B (it) 1986-04-30
FR2337115A1 (fr) 1977-07-29

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